Comparison of gamma ray effects on EPROMs and E2PROMs
2009 ◽
Vol 24
(1)
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pp. 61-67
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Keyword(s):
This paper compares the reliability of standard commercial Erasable Programmable Read Only Memory (EPROM) and Electrically Erasable Programmable Read Only Memory (E2PROM) components exposed to gamma rays. The results obtained for CMOS-based EPROM (NM27C010) and E2PROM (NM93CS46) components provide the evidence that EPROMs have greater radiation hardness than E2PROMs. Moreover, the changes in EPROMs are reversible, and after erasure and reprogramming all EPROM components restore their functionality. On the other hand, changes in E2PROMs are irreversible. The obtained results are analyzed and interpreted on the basis of gamma ray interaction with the CMOS structure.
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1975 ◽
Vol 68
◽
pp. 363-383
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Keyword(s):
2005 ◽
Vol 201
◽
pp. 486-487
Keyword(s):
2012 ◽
Vol 27
(3)
◽
pp. 284-289
◽
Keyword(s):
1981 ◽
Vol 301
(1462)
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pp. 661-663
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1967 ◽
Vol 31
◽
pp. 469-471
1994 ◽
Vol 144
◽
pp. 635-639
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1999 ◽
Vol 173
◽
pp. 249-254
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1969 ◽
Vol 27
◽
pp. 6-7
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