Source/Drain Contact Engineering of InGaZnO Channel BEOL Transistor for Low Contact Resistance and Suppressing Channel Shortening Effect

We studied the variation in electrical conductivity of exfoliated RuO2 nanosheets and the modulation in the contact resistance of individual nanosheet devices using charge transfer doping effects based on surface metal nanoparticle decorations. The electrical conductivity in the monolayer and bilayer RuO2 nanosheets gradually increased due to the surface decoration of Cu, and subsequently Ag, nanoparticles. We obtained contact resistances between the nanosheet and electrodes using the four-point and two-point probe techniques. Moreover, the contact resistances decreased during the surface decoration processes. We established that the surface decoration of metal nanoparticles is a suitable method for external contact engineering and the modulation of the internal properties of nanomaterials.

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Tungsten/In–Sn–O stacked source/drain electrode structure of In–Ga–Zn–O thin-film transistor for low-contact resistance and suppressing channel shortening effect

Japanese Journal of Applied Physics ◽

10.7567/1347-4065/aafd97 ◽

2019 ◽

Vol 58 (SB) ◽

pp. SBBJ03 ◽

Cited By ~ 2

Author(s):

Junji Kataoka ◽

Nobuyoshi Saito ◽

Tomomasa Ueda ◽

Tsutomu Tezuka ◽

Tomoaki Sawabe ◽

...

Keyword(s):

Thin Film ◽

Contact Resistance ◽

Thin Film Transistor ◽

Electrode Structure ◽

Channel Shortening ◽

Drain Electrode

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Microstructural Characterization of Au-Ge-Ni based ohmic contacts to GaAs/AlGaAs modfet device

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100126433 ◽

1987 ◽

Vol 45 ◽

pp. 326-327

Author(s):

A.K. Rai ◽

A.K. Petford-Long ◽

A. Ezis ◽

D.W. Langer

Keyword(s):

Contact Resistance ◽

Ohmic Contact ◽

Ohmic Contacts ◽

Microstructural Characterization ◽

Almost Everywhere ◽

Spacer Layer ◽

Good Contact ◽

The Relationship ◽

Lower Contact

Considerable amount of work has been done in studying the relationship between the contact resistance and the microstructure of the Au-Ge-Ni based ohmic contacts to n-GaAs. It has been found that the lower contact resistivity is due to the presence of Ge rich and Au free regions (good contact area) in contact with GaAs. Thus in order to obtain an ohmic contact with lower contact resistance one should obtain a uniformly alloyed region of good contact areas almost everywhere. This can possibly be accomplished by utilizing various alloying schemes. In this work microstructural characterization, employing TEM techniques, of the sequentially deposited Au-Ge-Ni based ohmic contact to the MODFET device is presented.The substrate used in the present work consists of 1 μm thick buffer layer of GaAs grown on a semi-insulating GaAs substrate followed by a 25 Å spacer layer of undoped AlGaAs.

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Degradation Phenomenon of Electrical Contacts by using a Micro-Sliding Mechanism -Modeling about Fluctuation of Contact Resistance-

IEICE Proceeding Series ◽

10.15248/proc.2.6 ◽

2014 ◽

Vol 2 ◽

pp. 6-9

Author(s):

Shin-ichi Wada ◽

Koichiro Sawa

Keyword(s):

Contact Resistance ◽

Electrical Contacts ◽

Sliding Mechanism ◽

Mechanism Modeling

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TEM Studies and Contact Resistance of Au/Ni/Ti/Ta/n-GaN Ohmic Contacts

MRS Proceedings ◽

10.1557/proc-764-c3.17 ◽

2003 ◽

Vol 764 ◽

Cited By ~ 3

Author(s):

D.N. Zakharov ◽

Z. Liliental-Weber ◽

A. Motayed ◽

S.N. Mohammad

Keyword(s):

Contact Resistance ◽

Ohmic Contacts ◽

High Resolution Electron Microscopy ◽

X Ray ◽

Electron Energy Loss Spectrometry ◽

Resolution Electron ◽

Order Of Magnitude ◽

Contact Surfaces ◽

Electron Energy Loss ◽

Magnitude Difference

AbstractOhmic Ta/Ti/Ni/Au contacts to n-GaN have been studied using high resolution electron microscopy (HREM), energy dispersive X-ray spectrometry (EDX) and electron energy loss spectrometry (EELS). Two different samples were used: A - annealed at 7500C withcontact resistance 5×10-6 Ω cm2 and B-annealed at 7750C with contact resistance 6×10-5 Ω cm2. Both samples revealed extensive in- and out-diffusion between deposited layers with some consumption ofGaNlayerand formation of TixTa1-xN50 (0<x<25) at the GaN interface. Almost an order of magnitude difference in contact resistances can be attributed to structure and chemical bonding of Ti-O layers formed on the contact surfaces.

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