scholarly journals Influence of Annealing Temperature on Electrical Properties of Unmodified Bentonite

2018 ◽  
Vol 3 (6) ◽  
pp. 28 ◽  
Author(s):  
Sevinj R. Imanova ◽  
Shamistan M. Hasanli ◽  
Ulkar F. Samadova ◽  
Rasim K. Guseynov ◽  
Ulviyye M. Safarzade
Keyword(s):  
Electrical Properties ◽  
Annealing Temperature ◽  
Water Molecules ◽  
Electric Resistance ◽  
Basic Reason ◽  
Alkaline Oxides

In this work, influence of annealing temperature on the electrical properties of unmodified bentonite has been investigated. It is concluded that, by the increase of annealing temperature, the values of permittivity and conductivity are decreased, but the electric resistance and the density of the bentonite are increased. It is also shown that the basic reason for this is the presence of water molecules and alkaline oxides such as Na2O, K2O in bentonite.

Effect of annealing temperature on the microstructure and optical–electrical properties of Cu–Al–O thin films

2013 ◽  
Vol 74 (12) ◽  
pp. 1672-1677 ◽  
Author(s):  
Y.J. Zhang ◽  
Z.T. Liu ◽  
D.Y. Zang ◽  
X.S. Che ◽  
L.P. Feng ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Annealing Temperature

Annealing temperature and spin speed effect on TiO2 nanostructured topology and electrical properties

2015 ◽  
Author(s):  
I.H.H. Affendi ◽  
N. E. A. Azhar ◽  
M.S.P. Sarah ◽  
Salman A.H. Alrokayan ◽  
Haseeb A. Khan ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Annealing Temperature ◽  
Spin Speed ◽  
Speed Effect

Synthesis, Characterization and Thermal Behavior of  HYP2O7·3H2O Electrical Properties of  HYP2O7

2021 ◽  
Author(s):  
Rahma Rahzelli Zrelli ◽  
Fathia Chehimi-Moumen ◽  
Dalila Ben Hassen-Chehimi ◽  
Malika Trabelsi-Ayadi
Keyword(s):  
Infrared Spectroscopy ◽  
Electrical Properties ◽  
Complex Analysis ◽  
Optical Band Gap ◽  
Water Molecules ◽  
X Ray Diffraction ◽  
Soft Chemistry ◽  
Medium Temperature ◽  
X Ray ◽  
Three Stages

Abstract The synthesis of the diphosphate HYP2O7·3H2O was made via soft chemistry route from evaporation of aqueous solution at room temperature. The obtained compound, was characterized by means of X-ray diffraction (XRD) and infrared spectroscopy (IR). The results showed a high purity phase. IR spectrum of this diphosphate revealed usual signals related to P2O7 diphosphate group and water molecules. The thermal decomposition of the synthesized product by DTA / TG proceeded through four stages leading to the formation of the Y2P4O13 as a final product. On the other hand, its decomposition by CRTA took place in three stages leading to the formation of the anhydrous diphosphate HYP2O7 as a final product. X-ray powder diffraction and infrared spectroscopy were used to identify these materials. Furthermore the electrical properties of the HYP2O7 were investigated through impedance complex analysis. Modest conductivity has been observed in this material at relatively medium temperature range. Activation energy of 0.67 and 1.44 eV, was deduced from the corresponding Arrhenius plot.The optical band gap of the title compound is calculated and found to be 2.71 eV.

Effect of Silver Electrode Annealing Temperature on Electrical Properties of Sodium Potassium Niobate Based Ceramics

2018 ◽  
Vol 48 (2) ◽  
pp. 845-852 ◽  
Author(s):  
N. N. Wathore ◽  
Bhupender Rawal ◽  
Prashant Dixit ◽  
Snehal Mandave ◽  
B. Praveenkumar ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Annealing Temperature ◽  
Silver Electrode ◽  
Potassium Niobate ◽  
Sodium Potassium ◽  
Sodium Potassium Niobate

Electrical Properties of Srta2O6 Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition (Peald)

2001 ◽  
Vol 685 ◽  
Author(s):  
Won-Jae Lee ◽  
Chang-Ho Shin ◽  
In-Kyu You ◽  
Il-Suk Yang ◽  
Sang-Ouk Ryu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Leakage Current ◽  
Annealing Temperature ◽  
Atomic Layer ◽  
Si Substrates ◽  
Annealing Temperatures ◽  
Layer Deposition ◽  
Current Characteristics

AbstractThe SrTa2O6 (STO) thin films were prepared by plasma enhanced atomic layer deposition (PEALD) with alternating supply of reactant sources, Sr[Ta(C2H5O)5(C4H10NO)]2 {Strontium bis-[tantalum penta-ethoxide dimethyllaminoethoxide]; Sr(Ta(OEt)5▪dmae)2} and O2plasma. It was observed that the uniform and conformal STO thin films were successfully deposited using PEALD and the film thickness per cycle was saturated at about 0.8 nm at 300°C. Electrical properties of SrTa2O6 (STO) thin films prepared on Pt/SiO2/Si substrates with annealing temperatures have been investigated. While the grain size and dielectric constant of STO films increased with increasing annealing temperature, the leakage current characteristics of STO films slightly deteriorated. The leakage current density of a 40nm-STO film was about 5×10−8A/cm2 at 3V.

Effects of Annealing Temperature on the Electrical Properties of ALD-Grown Hf-Silicate Films Having Various Si Contents

2007 ◽  
Vol 51 (1) ◽  
pp. 168 ◽  
Author(s):  
Dongwon Lee ◽  
Dongchan Suh ◽  
Dae-Hong Ko ◽  
Kyung Park ◽  
Myung Soo Lee ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Annealing Temperature

Charge Trapping in Hafnium Silicate Films with Modulated Composition and Enhanced Permittivity

2013 ◽  
Vol 854 ◽  
pp. 125-133 ◽  
Author(s):  
Larysa Khomenkova ◽  
Xavier Portier ◽  
Abdelilah Slaoui ◽  
Fabrice Gourbilleau
Keyword(s):  
Dielectric Constant ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Annealing Temperature ◽  
Annealing Treatment ◽  
Charge Trapping ◽  
Dielectric Films ◽  
Radio Frequency Magnetron Sputtering ◽  
Hafnium Silicate ◽  
Evolution Of Microstructure

Hafnium silicate dielectric films were fabricated by radio frequency magnetron sputtering. Their microstructure and electrical properties were studied versus annealing treatment. The evolution of microstructure and the formation of alternated HfO2-rich and SiO2-rich layers were observed and explained by surface directed spinodal decomposition. The stable tetragonal HfO2 phase was formed upon an annealing at 1000-1100°C. The control of annealing temperature allowed the memory window to be achieved and to be tuned as well as the dielectric constant to be enhanced.

Electrical Properties of Multilayer Synthesized CuInSi Thin Film

2011 ◽  
Vol 383-390 ◽  
pp. 822-825
Author(s):  
Ping Luan ◽  
Jian Sheng Xie ◽  
Jin Hua Li
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Electrical Properties ◽  
Annealing Temperature ◽  
Time Effect ◽  
X Ray Diffraction ◽  
Testing Instrument ◽  
X Ray ◽  
Conductivity Type

Using magnetron sputtering technology, the CuInSi thin films were prepared by multilayer synthesized method. The structure of CuInSi films were detected by X-ray diffraction(XRD), the main crystal phase peak is at 2θ=42.458°; The resistivity of films were measured by SDY-4 four-probe meter; The conductive type of the films were tested by DLY-2 conductivity type testing instrument. The results show that the annealing temperature and time effect on the crystal resistivity and crystal structure greatly.

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