Structural studies of flash evaporated a-Ge2S3 thin films nanolayers by high resolution X-ray- and synchrotron radiation photoelectron spectroscopy

2013 ◽  
Vol 34 (0) ◽  
pp. 80-85
Author(s):  
S. Petretskyi ◽  
R. Holomb ◽  
V. Mitsa ◽  
O. Kondrat ◽  
N. Popovych ◽  
...  
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Synchrotron Radiation ◽  
Photoelectron Spectroscopy ◽  
Structural Studies ◽  
X Ray

Synchrotron Radiation and Conventional X-ray source photoemission studies of γ-Al2O3 thin films grown on Si(111) and Si(001) substrates by molecular beam epitaxy

2009 ◽  
Vol 1155 ◽  
Author(s):  
Mario El Kazzi ◽  
Clement Merckling ◽  
Genevieve Grenet ◽  
Guillaume Saint-Girons ◽  
Mathieu Silly ◽  
...  
Keyword(s):  
Thin Films ◽  
High Resolution ◽  
Synchrotron Radiation ◽  
Molecular Beam Epitaxy ◽  
Photoelectron Spectroscopy ◽  
Interfacial Layer ◽  
Molecular Beam ◽  
The Other ◽  
X Ray ◽  
Angular Measurements

AbstractHigh-resolution synchrotron radiation X-ray photoelectron spectroscopy (HRXPS) is used to study the chemical bonding at the Al2O3/Si(001) and Al2O3/Si(111) interfaces. In both cases, the Si2p spectra recorded at 180 eV photon energy provides evidence a thin interfacial layer rich in Si-O bonding. On the other hand, conventional AlKα X-ray source angular measurements clearly indicate that there are two in-plane orientations for Al2O3/Si(111) : [11-2]Al2O3(111)//[11-2]Si(111) and [-1-12] Al2O3(111)//[11-2]Si(111) but four in-plane orientations for Al2O3/Si(001) : [11-2] Al2O3(111)//[100]Si(001), [11-2]Al2O3(111)//[010]Si(001), [11-2]Al2O3(111)//[-100]Si(001), and [11-2]Al2O3(111)//[0-10]Si(001).

Nanostructural C-Al-N thin films studied by x-ray photoelectron spectroscopy, Raman and high-resolution transmission electron microscopy

2009 ◽  
Vol 24 (11) ◽  
pp. 3321-3330 ◽  
Author(s):  
Y.F. Han ◽  
T. Fu ◽  
Y.G. Shen
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Photoelectron Spectroscopy ◽  
Face Centered Cubic ◽  
X Ray ◽  
Al Content ◽  
Transmission Electron ◽  
Face Centered

The effects of Al incorporation and post-deposition annealing on the structural properties of C-Al-N thin films prepared by reactive unbalanced dc-magnetron sputtering were investigated using x-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and high-resolution transmission electron microscopy (HRTEM). XPS studies demonstrated the presence of abundant Al-N bonds in addition to C-C and N-C bonds. At low incorporations of Al and N, the films were found to be essentially amorphous. By Raman and HRTEM, the formation of ∼5 nm fullerene-like carbon nitride (FL-CNx) nanostructures in an amorphous (C, CNx) matrix was evidenced with increasing Al content in the films. Crystalline improvement of FL-CNx nanostructures was seen, as well as the precipitation of ∼3–4 nm face centered cubic (fcc-) AlN nanograins by thermal annealing at 500 °C or above. Through these improvements, C-Al-N nanocomposite thin films were achieved. The effects of the incorporated Al and annealing on stabilizing fcc-AlN nanograins and FL-CNx nanostructures are elucidated and explained through the use of thermodynamic considerations.

Interfacial interactions between CoTPP molecules and MgO(100) thin films

2017 ◽  
Vol 19 (18) ◽  
pp. 11549-11553 ◽  
Author(s):  
Matthias Franke ◽  
Daniel Wechsler ◽  
Quratulain Tariq ◽  
Michael Röckert ◽  
Liang Zhang ◽  
...  
Keyword(s):  
Thin Films ◽  
Synchrotron Radiation ◽  
Photoelectron Spectroscopy ◽  
Ultra Violet ◽  
Interfacial Interactions ◽  
X Ray

We have investigated the interactions between cobalt(ii)-tetraphenylporphyrin molecules and MgO(100) thin films on Ag(100) by means of synchrotron radiation X-ray and ultra-violet photoelectron spectroscopy.

Phase configuration, nanostructure, and mechanical behaviors in Ti-B-C-N thin films

2009 ◽  
Vol 24 (8) ◽  
pp. 2520-2527 ◽  
Author(s):  
Yonghao Lu ◽  
Junping Wang ◽  
Yaogen Shen ◽  
Dongbai Sun
Keyword(s):  
Thin Films ◽  
Photoelectron Spectroscopy ◽  
Solid Solution Hardening ◽  
Mechanical Behaviors ◽  
Additional Increase ◽  
N Content ◽  
X Ray ◽  
Nanocomposite Thin Films ◽  
The Cost ◽  
Nano Grains

A series of Ti-B-C-N thin films were deposited on Si (100) at 500 °C by incorporation of different amounts of N into Ti-B-C using reactive unbalanced dc magnetron sputtering in an Ar-N2 gas mixture. The effect of N content on phase configuration, nanostructure evolution, and mechanical behaviors was studied by x-ray diffraction, x-ray photoelectron spectroscopy, Raman spectroscopy, high-resolution transmission electron microscopy, and microindentation. It was found that the pure Ti-B-C was two-phased quasi-amorphous thin films comprising TiCx and TiB2. Incorporation of a small amount of N not only dissolved into TiCx but also promoted growth of TiCx nano-grains. As a result, nanocomposite thin films of nanocrystalline (nc-) TiCx(Ny) (x + y < 1) embedded into amorphous (a-) TiB2 were observed until nitrogen fully filled all carbon vacancy lattice (at that time x + y = 1). Additional increase of N content promoted formation of a-BN at the cost of TiB2, which produced nanocomposite thin films of nc-Ti(Cx,N1-x) embedded into a-(TiB2, BN). Formation of BN also decreased nanocrystalline size. Both microhardness and elastic modulus values were increased with an increase of N content and got their maximums at nanocomposite thin films consisting of nc-Ti(Cx,N1-x) and a-TiB2. Both values were decreased after formation of BN. Residual compressive stress value was successively decreased with an increase of N content. Enhancement of hardness was attributed to formation of nanocomposite structure and solid solution hardening.

scholarly journals Optical Constant and Conformality Analysis of SiO2 Thin Films Deposited on Linear Array Microstructure Substrate by PECVD

Coatings ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 510
Author(s):  
Yongqiang Pan ◽  
Huan Liu ◽  
Zhuoman Wang ◽  
Jinmei Jia ◽  
Jijie Zhao
Keyword(s):  
Thin Films ◽  
Film Thickness ◽  
Deposition Rate ◽  
Optical Constant ◽  
Photoelectron Spectroscopy ◽  
Linear Array ◽  
Chemical Vapor ◽  
Rf Plasma ◽  
X Ray ◽  
Sio2 Thin Film

SiO2 thin films are deposited by radio frequency (RF) plasma-enhanced chemical vapor deposition (PECVD) technique using SiH4 and N2O as precursor gases. The stoichiometry of SiO2 thin films is determined by the X-ray photoelectron spectroscopy (XPS), and the optical constant n and k are obtained by using variable angle spectroscopic ellipsometer (VASE) in the spectral range 380–1600 nm. The refractive index and extinction coefficient of the deposited SiO2 thin films at 500 nm are 1.464 and 0.0069, respectively. The deposition rate of SiO2 thin films is controlled by changing the reaction pressure. The effects of deposition rate, film thickness, and microstructure size on the conformality of SiO2 thin films are studied. The conformality of SiO2 thin films increases from 0.68 to 0.91, with the increase of deposition rate of the SiO2 thin film from 20.84 to 41.92 nm/min. The conformality of SiO2 thin films decreases with the increase of film thickness, and the higher the step height, the smaller the conformality of SiO2 thin films.

Sign in / Sign up

Export Citation Format

Share Document