Cold Wall CVD Graphene-Based Transparent Electrode for Solar Cells

In this paper, we report on synthesis of graphene film on Cu foil by cold wall CVD and successfully transferred to a photovoltaic cell. The obtained sample was covered with an ultra-thin layer of Ni, of about 4 nm, using a sputtering technique. The optical and electrical properties of graphene/Ni-based films showed superior performance (transmittance =65%, sheet resistance=250 Ω/sq; EQE=40%) compared to films made of ITO/nickel, described in literature, of greater thickness.

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Application Examples for the Different Measurement Modes of Electrical Properties of the Solar Cells

Archives of Metallurgy and Materials ◽

10.2478/amm-2014-0040 ◽

2014 ◽

Vol 59 (1) ◽

pp. 247-252 ◽

Cited By ~ 11

Author(s):

M. Musztyfaga-Staszuk ◽

L.A. Dobrzanski ◽

S. Rusz ◽

M. Staszuk

Keyword(s):

Solar Cells ◽

Electrical Properties ◽

Contact Resistance ◽

Sheet Resistance ◽

Cross Sections ◽

Standard Technique ◽

Photovoltaic Cell ◽

Metal Resistance ◽

Silicon Wafers ◽

Formation Technique

Abstract The aim of the paper was to apply the newly developed instruments ‘Corescan’ and ‘Sherescan’ in order to measure the essential parameters of producing solar cells in comparison with the standard techniques. The standard technique named the Transmission Line Method (TLM) is one way to monitor contacting process to measure contact resistance locally between the substrate and metallization. Nowadays, contact resistance is measured over the whole photovoltaic cell using Corescanner instrument. The Sherescan device in comparison with standard devices gives a possibility to measure the sheet resistance of the emitter of silicon wafers and determine of both P/N recognition and metal resistance. The Screen Printing (SP) method is the most widely used contact formation technique for commercial silicon solar cells. The contact resistance of manufactured front metallization depends of both the paste composition and co-firing conditions. Screen printed front side metallization and next to co-fired in the infrared conveyor furnace was carried out at various temperature from 770°C to 920°C. The silver paste used in the present paper is commercial. The investigations were carried out on monocrystalline silicon wafers. The topography of co-fired in the infrared belt furnace front metallization was investigated using the atomic force microscope and scanning electron microscope (SEM). There were researched also cross sections of front contacts using SEM microscope. Front contacts of the solar cells were formed on non-textured silicon surface with coated antireflection layer. On one hand, based on electrical properties investigations using Sherescan instrument it was obtained the knowledge of the emitter sheet resistance across the surface of a wafer, what is essential in optimizing the emitter diffusion process. On the other hand, it was found using Corescan instrument that the higher temperature apparently results in a strongly decreased contact resistance.

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Investigation Of Some Optical And Electrical Properties Of InSe Thin Film, a Window Layer for Photovoltaic Cell Growth on Glass/GaSe Substrate by M-CBD Method

Karadeniz Fen Bilimleri Dergisi ◽

10.31466/kfbd.930609 ◽

2021 ◽

Vol 11 (1) ◽

pp. 297-306

Author(s):

Fatih ÜNAL

Keyword(s):

Thin Film ◽

Electrical Properties ◽

Cell Growth ◽

Photovoltaic Cell ◽

Window Layer ◽

Optical And Electrical Properties ◽

Cbd Method

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Effect Of Fluorine Doping On The Structural, Optical And Electrical Properties Of Spin Coated Tin Oxide Thin Films For Solar Cells Application

10.36293/sfj.2019.0002 ◽

2019 ◽

Keyword(s):

Thin Films ◽

Solar Cells ◽

Electrical Properties ◽

Tin Oxide ◽

Transparent Conducting Oxide ◽

Optical And Electrical Properties ◽

Fluorine Doping ◽

X Ray Diffraction ◽

X Ray ◽

Transparent Conducting

Transparent conducting oxide (TCO) thin films are materials of significance for their applications in optoelectronics and sun powered cells. Fluorine-doped tin oxide (FTO) is an elective material in the advancement of TCO films. This paper reports the impact of fluorine doping on structural, optical and electrical properties of tin oxide thin films for solar cells application. The sol-gel was prepared from anhydrous stannous chloride, SnCl2 as an originator, 2-methoxyethanol as a solvent, di-ethanolamine as a preservative and ammonium fluoride as the dopant source. FTO precursor solution was formulated to obtain 0, 5, 10, 15 and 20 % doping concentration and deposited on glass substrates by means of spin coater at the rate of 2000 rpm for 40 seconds. After pre-heated at 200 oC, the samples were annealed at 600 oC for 2 h. The structural, optical and electrical characteristics of prepared films were characterized using X-ray diffraction (XRD) analysis, UV-visible spectroscopy and electrical measurement. X-ray diffraction (XRD) investigation of the films demonstrated that the films were polycrystalline in nature with tetragonal-cassiterite structure with most extraordinary pinnacle having a grain size of 17.01 nm. Doping with fluorine decreases the crystallite size. There was increment in the absorbance of the film with increasing wavelength and the transmittance was basically reduced with increasing fluorine doping in the visible region. The energy band gaps were in the range of 4.106-4.121 eV. The sheet resistance were observed to decrease as the doping percentage of fluorine increased with exception at higher doping of 15 and 20 %. In view of these outcomes, FTO thin films prepared could have useful application in transparent conducting oxide electrode in solar cell.

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