AP-MOVPE Technology and Characterization of InGaAsN p-i-n Subcell for InGaAsN/GaAs Tandem Solar Cell
2014 ◽
Vol 60
(2)
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pp. 151-156
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Abstract Tandem (two p-n junctions connected by tunnel junction) and multijunction solar cells (MJSCs) based on AIIIBV semiconductor compounds and alloys are the most effective photovoltaic devices. Record efficiency of the MJSCs exceeds 44% under concentrated sunlight. Individual subcells connected in series by tunnel junctions are crucial components of these devices. In this paper we present atmospheric pressure metal organic vapour phase epitaxy (AP-MOVPE) of InGaAsN based subcell for InGaAsN/GaAs tandem solar cell. The parameters of epitaxial structure (optical and electrical), fabrication process of the test solar cell devices and current-voltage (J-V) characteristics are presented and discussed.
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1998 ◽
Vol 184-185
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pp. 1338
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1996 ◽
Vol 05
(04)
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pp. 621-629
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Keyword(s):
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1994 ◽
Vol 9
(11)
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pp. 2073-2079
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2003 ◽
Vol 19
(2)
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pp. 147-151
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