scholarly journals Surface micromorphology analysis of Cu/Ni nanocomposite thin films by power spectra density and fractal geometry

2020 ◽  
Vol 38 (2) ◽  
pp. 328-333
Author(s):  
Kimia Nikpasand ◽  
Seyed Mohammad Elahi ◽  
Amir Hossein SarI ◽  
Arash Boochani
Keyword(s):  
Rf Sputtering ◽  
Power Spectra ◽  
Morphological Properties ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Power Spectral ◽  
Surface Micromorphology ◽  
Afm Analysis

AbstractCopper (Cu) and nickel (Ni) nanoparticles have been grown simultaneously on glass and silicon substrates by RF sputtering method to form three Cu/Ni nanocomposites at different deposition times. The existence of Cu and Ni peaks in the X-ray diffraction (XRD) profiles confirms the crystalline structure of samples with Cu and Ni atomic content which have also been characterized by Rutherford backscattering (RBS) method. Moreover, the structural and morphological properties of the prepared nanocomposites have been compared with respect to their morphologies by means of atomic force microscopy (AFM) analysis. In order to compare the surface roughness over different spatial frequency ranges and evaluate surface quality, power spectral density (PSD) of each sample has been extracted from AFM data and also, the experimental and theoretical results have been compared. The fractal nature of these nanocomposites has been finally discussed.

ANNEALING TIME EFFECT ON NANOSTRUCTURED n-ZnO/p-Si HETEROJUNCTION PHOTODETECTOR PERFORMANCE

2015 ◽  
Vol 22 (02) ◽  
pp. 1550027 ◽  
Author(s):  
NADIR. F. HABUBI ◽  
RAID. A. ISMAIL ◽  
WALID K. HAMOUDI ◽  
HASSAM. R. ABID
Keyword(s):  
Annealing Time ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Zno Nps ◽  
Force Microscopy ◽  
Atomic Force ◽  
Junction Type ◽  
P Type ◽  
Quartz Substrates ◽  
Two Peaks

In this work, n- ZnO /p- Si heterojunction photodetectors were prepared by drop casting of ZnO nanoparticles (NPs) on single crystal p-type silicon substrates, followed by (15–60) min; step-annealing at 600∘C. Structural, electrical, and optical properties of the ZnO NPs films deposited on quartz substrates were studied as a function of annealing time. X-ray diffraction studies showed a polycrystalline, hexagonal wurtizte nanostructured ZnO with preferential orientation along the (100) plane. Atomic force microscopy measurements showed an average ZnO grain size within the range of 75.9 nm–99.9 nm with a corresponding root mean square (RMS) surface roughness between 0.51 nm–2.16 nm. Dark and under illumination current–voltage (I–V) characteristics of the n- ZnO /p- Si heterojunction photodetectors showed an improving rectification ratio and a decreasing saturation current at longer annealing time with an ideality factor of 3 obtained at 60 min annealing time. Capacitance–voltage (C–V) characteristics of heterojunctions were investigated in order to estimate the built-in-voltage and junction type. The photodetectors, fabricated at optimum annealing time, exhibited good linearity characteristics. Maximum sensitivity was obtained when ZnO / Si heterojunctions were annealed at 60 min. Two peaks of response, located at 650 nm and 850 nm, were observed with sensitivities of 0.12–0.19 A/W and 0.18–0.39 A/W, respectively. Detectivity of the photodetectors as function of annealing time was estimated.

scholarly journals Structural and Morphological Properties of Titanium Aluminum Nitride Coatings Produced by Triode Magnetron Sputtering

2014 ◽  
Vol 10 (20) ◽  
pp. 51-64 ◽  
Author(s):  
D.M. Devia ◽  
E. Restrepo-Parra ◽  
J.M. Velez-Restrepo
Keyword(s):  
Magnetron Sputtering ◽  
Bias Voltage ◽  
Structural Changes ◽  
Morphological Properties ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Titanium Aluminum ◽  
Microscopy Techniques ◽  
Titanium Aluminum Nitride

Tix Al1−xN coatings were grown using the triode magnetron sputtering technique varying the bias voltage between -40 V and -150V. The influence of bias voltage on structural and morphological properties was analyzed by means of energy dispersive spectroscopy, x-ray diffraction and atomic force microscopy techniques. As the bias voltage increased, an increase inthe Al atomic percentage was observed competing with Ti and producing structural changes. At low Al concentrations, the film presented a FCC crystalline structure; nevertheless, as Al was increased, the structure pre-sented a mix of FCC and HCP phases. On the other hand, an increase inbias voltage produced a decrease films thickness due to an increase in colli-sions. Moreover, the grain size and roughness were also strongly influencedby bias voltage.

Fabrication of GaN Doped ZnO Nanocrystallines by Laser Ablation

2008 ◽  
Vol 8 (8) ◽  
pp. 4168-4171
Author(s):  
N. Gopalakrishnan ◽  
B. C. Shin ◽  
K. P. Bhuvana ◽  
J. Elanchezhiyan ◽  
T. Balasubramanian
Keyword(s):  
Deep Level ◽  
Morphological Properties ◽  
X Ray Diffraction ◽  
Ceramic Method ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Doped Zno ◽  
Krf Excimer Laser ◽  
Photoluminescence Studies

Here, we present the fabrication of pure and GaN doped ZnO nanocrystallines on Si(111) substrates by KrF excimer laser. The targets for the ablation have been prepared by conventional ceramic method. The fabricated nanocrystallines have been investigated by X-ray diffraction, photoluminescence and atomic force microscopy. The X-ray diffraction analysis shows that the crystalline size of pure ZnO is 36 nmand it is 41 nmwhile doped with 0.8 mol% of GaN due to best stoichiometry between Zn and O. Photoluminescence studies reveal that intense deep level emissions have been observed for pure ZnO and it has been suppressed for the GaN doped ZnO structures. The images of atomic force microscope show that the rms surface roughness is 27 nm for pure ZnO and the morphology is improved with decrease in rms roughness, 18 nm with fine crystallines while doped with 1 mol% GaN. The improved structural, optical and morphological properties of ZnO nanocrystalline due to GaN dopant have been discussed in detail.

Improved Functional Capabilities of Quasi-Two-Dimensional Tungsten Oxide Nanostructures

2016 ◽  
Vol 689 ◽  
pp. 55-59
Author(s):  
Serge Zhuiykov
Keyword(s):  
Photoelectron Spectroscopy ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Current Sensing ◽  
X Ray ◽  
Force Microscopy ◽  
Functional Capabilities ◽  
Atomic Force ◽  
Oxide Nanostructures ◽  
Afm Analysis

Electrical properties and morphology of orthorhombic β–WO3 nano-flakes with thickness of ~7-9 nm were investigated at the nanoscale using energy dispersive X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and current sensing force spectroscopy atomic force microscopy (CSFS-AFM, or PeakForce TUNATM). CSFS-AFM analysis established good correlation between the topography of the developed nanostructures and various features of WO3 nano-flakes synthesized via a two-step sol-gel-exfoliation method. It was determined that β–WO3 nano-flakes annealed at 550°C possess distinguished and exceptional thickness-dependent properties in comparison with the bulk, micro- and nano-structured WO3 synthesized at alternative temperatures.

scholarly journals UV Sensitivity of Indium-Zinc Oxide Nanofibers

2018 ◽  
Vol 2018 ◽  
pp. 1-6 ◽  
Author(s):  
Nadezhda Markova ◽  
Olga Berezina ◽  
Nikolay Avdeev ◽  
Alexander Pergament
Keyword(s):  
Zinc Oxide ◽  
Indium Content ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Indium Zinc Oxide ◽  
Electrospinning Method ◽  
Recovery Times ◽  
Response And Recovery

Indium-zinc oxide (IZO) nanofiber matrices are synthesized on SiO2-covered silicon substrates by the electrospinning method. The nanofibers’ dimensions, morphology, and crystalline structure are characterized by scanning electron microscopy, atomic force microscopy, and X-ray diffraction. The results of studying the electrical properties of nanofibers, as well as their sensitivity to UV radiation depending on the In-to-Zn concentration ratio, are presented. It is shown that the highest sensitivity to UV is observed at the indium content of about 50 atomic %. The photocurrent increment with respect to the dark current is more than 4 orders of magnitude. The response and recovery times are 60 and 500 sec, respectively. The results obtained suggest that IZO nanofibers can find application as UV sensors with improved characteristics.

Mixed-layer illite-smectite in the Kinnekulle K-bentonite, northern Baltic Basin

Clay Minerals ◽  
2009 ◽  
Vol 44 (4) ◽  
pp. 455-468 ◽  
Author(s):  
P. Somelar ◽  
K. Kirsimäe ◽  
J. Środoń
Keyword(s):  
Mixed Layer ◽  
Particle Morphology ◽  
X Ray Diffraction ◽  
Baltic Basin ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Afm Analysis ◽  
The Baltic ◽  
Layer Mineral

AbstractThe composition and particle morphology of diagenetic mixed-layer illite-smectite (I-S) in the shallow buried Ordovician Kinnekulle K-bentonite were studied to understand the process of illitization in the Baltic Basin. The same K-bentonite bed from 12 different locations in the Basin was sampled and analysed by means of X-ray diffraction (XRD), atomic-force microscopy (AFM) and K-Ar dating. Illite-smectite in the samples was identified as a highly illitic R1 type illite-smectite vermiculite (high-charge smectite) mixed-layer mineral with 63–78% illitic layers. Illite-smectite was characterized by log-normally distributed thin particles with an area-weighted mean thickness varying from 1.9 to 3.6 nm and 2.1 to 3.8 nm by XRD-PVP and AFM analysis, respectively. The K-Ar diagenetic ages of the mixed-layer minerals suggest an illitization age of 370 to 420 Ma that agrees with the latest phase of the Caledonian orogeny. Illitization of the Kinnekulle bentonite was probably driven by the intrusion of K-rich fluids.

Fabrication and Comparison of Self-Organized Ag and Au Nanodots on Ti/MgO(001) Substrates

2020 ◽  
Vol 20 (5) ◽  
pp. 3231-3238
Author(s):  
Woo-Seong Kim ◽  
Kwang-Hun Oh ◽  
Tae-Hwan Kim ◽  
Seung-Hyun Shin ◽  
Tae-Woong Um ◽  
...  
Keyword(s):  
Seed Layer ◽  
X Ray Diffraction ◽  
Optical Absorbance ◽  
Force Microscopy ◽  
Self Organized ◽  
Atomic Force ◽  
Afm Analysis ◽  
The Difference ◽  
Au Nanodots ◽  
Ti Films

We analyze and compare the differences in the dewetting phenomena and crystal structure between Ag(5.0 nm) and Au(5.0 nm) layers deposited on a Ti(1.0 nm) seed layer coated onto a MgO(001) substrate. The samples are deposited at room temperature and annealed at 350–450 °C for 5 h. The surfaces of both Ag/Ti and Au/Ti films exhibit a completely separated island structure, subsequently leading to the formation of a nanodot array after annealing. Based on atomic force microscopy (AFM) analysis, we conclude that the dewetting progression speed of Ag/Ti films is higher than that of Au/Ti films. Based on X-ray diffraction (XRD) results, the Ti thin film acts as a seed layer, assisting the epitaxial growth of fcc-Ag(001) nanodots on the MgO(001) substrate, whereas in the case of Au/Ti, the Au layer grows non-epitaxially on the MgO(001) substrate, which is related to the difference in the surface energies of Ag and Au. Furthermore, the optical absorbance spectra of the self-organized Ag and Au nanodots with the Ti seed layer are obtained in the visible light range and the optical properties of Ag and Au nanodots are compared.

Synthesis and Characterization of Amorphous Metallic Alloy Thin Films for MEMS Applications

2003 ◽  
Vol 806 ◽  
Author(s):  
Senthil N Sambandam ◽  
Shekhar Bhansali ◽  
Venkat R. Bhethanabotla
Keyword(s):  
Thin Films ◽  
Mechanical Properties ◽  
Surface Morphology ◽  
X Ray Diffraction ◽  
Micro Electro Mechanical Systems ◽  
Force Microscopy ◽  
Target Composition ◽  
Atomic Force ◽  
Deposition Parameters ◽  
Afm Analysis

ABSTRACTMicrostructures of multi-component amorphous metallic glass alloys are becoming increasingly important due to their excellent mechanical properties and low coefficient of friction. In this work, thin films of Zr-Ti-Cu-Ni-Be have been deposited by DC magnetron sputtering in view of exploring their potential technological applications in fields such as Micro Electro Mechanical Systems (MEMS). Their structure, composition, surface morphology, mechanical properties viz., hardness and Young's modulus were analyzed using X-Ray Diffraction (XRD), Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM) and Nanoindentation. Influence of the deposition parameters of sputtering pressure and power upon the composition and surface morphology of these films has been evidenced by SEM, and AFM analysis, showing that such a process yields very smooth films with target composition at low sputtering pressures. These studies are useful in understanding the multicomponent sputtering process.

scholarly journals Ultrashort Pulsed Laser Ablation of Magnesium Diboride: Plasma Characterization and Thin Films Deposition

2015 ◽  
Vol 2015 ◽  
pp. 1-9 ◽  
Author(s):  
Angela De Bonis ◽  
Agostino Galasso ◽  
Antonio Santagata ◽  
Roberto Teghil
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Optical Emission ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Laser Target ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron

A MgB2target has been ablated by Nd:glass laser with a pulse duration of 250 fs. The plasma produced by the laser-target interaction, showing two temporal separated emissions, has been characterized by time and space resolved optical emission spectroscopy and ICCD fast imaging. The films, deposited on silicon substrates and formed by the coalescence of particles with nanometric size, have been analyzed by scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, micro-Raman spectroscopy, and X-ray diffraction. The first steps of the films growth have been studied by Transmission Electron Microscopy. The films deposition has been studied by varying the substrate temperature from 25 to 500°C and the best results have been obtained at room temperature.

scholarly journals Atomic force microscopy analysis of alkali textured silicon substrates for solar cell applications

2018 ◽  
Vol 6 (1) ◽  
pp. 13
Author(s):  
Adebayo Fashina ◽  
Kenneth Adama ◽  
Lookman Abdullah ◽  
Chukwuemeka Ani ◽  
Oluwaseun Oyewole ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Surface Morphology ◽  
Light Trapping ◽  
Surface Texturing ◽  
Etching Time ◽  
Silicon Substrates ◽  
Average Roughness ◽  
Force Microscopy ◽  
Atomic Force ◽  
Afm Analysis

In this paper, the surface morphology of textured silicon substrates is explored. Prior to the surface morphology analysis, textured silicon substrates were obtained by KOH anisotropic texturing of polished silicon wafers. This was achieved by investigating of the dependence surface texturing on the process parameters; etchant concentration, etching time and temperature. The surface morphology of the textured silicon samples was obtained using atomic force microscopy that was operated in the tapping mode. The resulting atomic force microscopy (AFM) images were analyzed using the Nanoscope and Gwyddion software packages. The AFM analysis revealed more surface details such as the depth, roughness, section, and step height analysis. The analysis was limited to a length scale of a few micrometers, which carefully reveals the number of individualities of the initial stages of pyramid growth. The average roughness was found to be 593nm for an optimally textured silicon wafer. The implications of the study are then discussed for potential light trapping application in silicon solar cells.

Sign in / Sign up

Export Citation Format

Share Document