scholarly journals Structural and Morphological Properties of Titanium Aluminum Nitride Coatings Produced by Triode Magnetron Sputtering

2014 ◽  
Vol 10 (20) ◽  
pp. 51-64 ◽  
Author(s):  
D.M. Devia ◽  
E. Restrepo-Parra ◽  
J.M. Velez-Restrepo
Keyword(s):  
Magnetron Sputtering ◽  
Bias Voltage ◽  
Structural Changes ◽  
Morphological Properties ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Titanium Aluminum ◽  
Microscopy Techniques ◽  
Titanium Aluminum Nitride

Tix Al1−xN coatings were grown using the triode magnetron sputtering technique varying the bias voltage between -40 V and -150V. The influence of bias voltage on structural and morphological properties was analyzed by means of energy dispersive spectroscopy, x-ray diffraction and atomic force microscopy techniques. As the bias voltage increased, an increase inthe Al atomic percentage was observed competing with Ti and producing structural changes. At low Al concentrations, the film presented a FCC crystalline structure; nevertheless, as Al was increased, the structure pre-sented a mix of FCC and HCP phases. On the other hand, an increase inbias voltage produced a decrease films thickness due to an increase in colli-sions. Moreover, the grain size and roughness were also strongly influencedby bias voltage.

Fabrication of GaN Doped ZnO Nanocrystallines by Laser Ablation

2008 ◽  
Vol 8 (8) ◽  
pp. 4168-4171
Author(s):  
N. Gopalakrishnan ◽  
B. C. Shin ◽  
K. P. Bhuvana ◽  
J. Elanchezhiyan ◽  
T. Balasubramanian
Keyword(s):  
Deep Level ◽  
Morphological Properties ◽  
X Ray Diffraction ◽  
Ceramic Method ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Doped Zno ◽  
Krf Excimer Laser ◽  
Photoluminescence Studies

Here, we present the fabrication of pure and GaN doped ZnO nanocrystallines on Si(111) substrates by KrF excimer laser. The targets for the ablation have been prepared by conventional ceramic method. The fabricated nanocrystallines have been investigated by X-ray diffraction, photoluminescence and atomic force microscopy. The X-ray diffraction analysis shows that the crystalline size of pure ZnO is 36 nmand it is 41 nmwhile doped with 0.8 mol% of GaN due to best stoichiometry between Zn and O. Photoluminescence studies reveal that intense deep level emissions have been observed for pure ZnO and it has been suppressed for the GaN doped ZnO structures. The images of atomic force microscope show that the rms surface roughness is 27 nm for pure ZnO and the morphology is improved with decrease in rms roughness, 18 nm with fine crystallines while doped with 1 mol% GaN. The improved structural, optical and morphological properties of ZnO nanocrystalline due to GaN dopant have been discussed in detail.

Studies of Hydroxyapatite Thin Coating Produced by Dual RF Magnetron Sputtering for Biomedical Applications

2011 ◽  
Vol 493-494 ◽  
pp. 473-476
Author(s):  
E.O. Lopez ◽  
F.F. Borghi ◽  
Alexandre Mello ◽  
J. Gomes ◽  
Antonella M. Rossi
Keyword(s):  
Magnetron Sputtering ◽  
Deposition Time ◽  
Grazing Incidence ◽  
Rf Magnetron Sputtering ◽  
Nanocrystalline Phase ◽  
Rf Power ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Sputtering Power

In this present work, we characterize HAp thin films deposited by dual magnetron sputtering device DMS on silicon (Si/HAp). The sputtering RF power was varied from 90 watts to 120 watts and deposition times from 60 to 180 minutes. The argon and oxygen pressure were fixed at 5.0 mTorr and 1.0 mTorr, respectively. Grazing incidence X-ray diffraction (GIXRD) from synchrotron radiation, infrared spectroscopy (FTIR) and atomic force microscopy (AFM) were used for the structural characterization. At lower deposition times, a crystalline phase with preferential orientation along apatite (002) and a disordered nanocrystalline phase were identified. The coating crystallinity was improved with the increase of the deposition time besides the sputtering power.

The Study of Al-N Codoped ZnO Thin Films Prepared by DC Magnetron Sputtering

2015 ◽  
Vol 754-755 ◽  
pp. 591-594
Author(s):  
Haslinda Abdul Hamid ◽  
M.N. Abdul Hadi
Keyword(s):  
Magnetron Sputtering ◽  
Structural Investigation ◽  
Annealing Treatment ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Oxygen Gas ◽  
Film Roughness

The codoped ZnO thin film were deposited by DC magnetron sputtering on silicon (111) followed by annealing treatment at 200 °C and 600 °C for 1 hour in nitrogen and oxygen gas mixture. Structural investigation was carried out by scanning electron microscopy (SEM), atomic force microscopy and x-ray diffraction (XRD). Film roughness and grain shape were found to be correlated with the annealing temperatures.

SURFACE MORPHOLOGY OF SUBMICRON CRYSTALS IN ALUMINUM NITRIDE FILMS GROWN BY DC MAGNETRON SPUTTERING

2005 ◽  
Vol 19 (12) ◽  
pp. 2073-2083 ◽  
Author(s):  
P. LIMSUWAN ◽  
N. UDOMKAN ◽  
S. MEEJOO ◽  
P. WINOTAI
Keyword(s):  
Magnetron Sputtering ◽  
X Ray Diffraction ◽  
Phonon Modes ◽  
Force Microscopy ◽  
Atomic Force ◽  
Deposition Parameters ◽  
X Band ◽  
Aln Film ◽  
Average Grain Size ◽  
Optimal Average

Aluminium nitride (AlN) thin films were fabricated on a glass substrate by reactive magnetron sputtering. Raman microscopy was then employed to follow the characteristics of their optical and acoustic phonon modes. At the optimal sputtering time of 30 minutes, the defect-induced first and second order Raman spectra were observed in 400–800 cm-1 band which were mostly related to the coating compositions. However, at the 30-, 60- and 90-minute sputtering, crystals of submicron size order of AlN were achieved. This could be clearly identified by the presence of Raman peak at 658–662 cm-1. Powder X-ray diffraction (PXRD) patterns revealed the development of (002) and (101) planes of hexagonal wurtzite AlN phase. The optimal average grain size measured by atomic force microscopy (AFM) is at 330 nm. It was found that the hardness was strongly dependent on roughness of the film, the maximum of which was achieved at 20.00 GPa. The presence of F-type defects in AlN films was investigated by X-band (~9.44 GHz) ESR spectrometer at 295 K. The ESR experiments were carried out by applying magnetic field perpendicular to AlN film, which showed the ESR six-peak multiplet signal at ~290 mT arising from superhyperfine interactions between nuclear spin I = 5/2 of 27 Al and electron spins trapped in nitrogen vacancies. The ESR signals are simulated and the ESR parameters are calculated. The vacancies are clearly randomly distributed as the ESR signals are independent of rotation angle (φ) about the normal of the film. All these results were analyzed and presented as a function of the deposition parameters and composition, and crystalline phases existed in the films.

Electrochemical Behavior of LiFePO4 Thin Film Prepared by RF Magnetron Sputtering in Li2SO4 Aqueous Electrolyte

2015 ◽  
Vol 14 (01n02) ◽  
pp. 1460027 ◽  
Author(s):  
Jiaxiong Wu ◽  
Wei Cai ◽  
Guangyi Shang
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Ion Diffusion ◽  
X Ray Diffraction ◽  
Electrochemical Tests ◽  
Force Microscopy ◽  
Atomic Force ◽  
Li Ion ◽  
Deposited Film

LiFePO 4 films were deposited on Au / Si substrate by radio-frequency magnetron sputtering. The effect of annealing on the crystallization and morphology of LiFePO 4 thin film has been investigated. X-ray diffraction revealed that the films through annealing were well crystallized compared with as-deposited films. The surface morphology of the thin film was also observed by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Electrochemical tests in 1M Li 2 SO 4 showed that the annealed thin film in 500°C exhibits larger Li -ion diffusion coefficient (3.46 × 10-7 cm2s-1) than as-deposited film and powder. Furthermore, cyclic voltammetry demonstrate a well-defined lithium intercalation/deintercalation reaction at around 0.45 V versus SCE (i.e., 3.6 V versus Li +/ Li ), suggesting that the annealed LiFePO 4 thin film is a promising candidate cathode film for lithium microbatteries.

STRUCTURE AND OPTICAL PROPERTIES OF InN THIN FILM GROWN ON SiC BY REACTIVE RF MAGNETRON SPUTTERING

2013 ◽  
Vol 20 (01) ◽  
pp. 1350008 ◽  
Author(s):  
M. AMIRHOSEINY ◽  
Z. HASSAN ◽  
S. S. NG ◽  
G. ALAHYARIZADEH
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Root Mean Square Roughness ◽  
Diffraction Measurement ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Growth Orientation ◽  
Atomic Force

The structure and optical properties of InN thin film grown on 6H-SiC by reactive radio frequency magnetron sputtering were investigated. X-ray diffraction measurement shows that the deposited InN film has (101) preferred growth orientation and wurtzite structure. Atomic force microscopy results reveal smooth surface with root-mean-square roughness around 3.3 nm. One Raman-active optical phonon of E2(high) and two Raman- and infrared-active modes of A1(LO) and E1(TO) of the wurtzite InN are clearly observed at 488.7, 582.7 and 486 cm-1, respectively. These results leading to conclude that the wurtzite InN thin film with (101) preferred growth orientation was successfully grown on 6H-SiC substrate.

Role of Pre-Layer Mo Films in Microstructural and Morphological Properties of Over-Layer CIGS Films

MRS Advances ◽  
2017 ◽  
Vol 2 (53) ◽  
pp. 3215-3224 ◽  
Author(s):  
Hamda A. Al-Thani ◽  
Falah S. Hasoon
Keyword(s):  
Physical Vapor Deposition ◽  
Least Square Method ◽  
Soda Lime ◽  
Least Square ◽  
Morphological Properties ◽  
Soda Lime Glass ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Sputtering Power

ABSTRACTThis study focuses on establishing a microstructural and morphological correlation between CIGS films and its precursor layer of Molybdenum (Mo) coated soda-lime glass (SLG). Therefore, variations in the morphology and microstructural properties of Mo thin films, using DC planar magnetron sputtering, were induced systematically by varying the sputtering pressure from 0.6 to 16 mT with a sputtering power density of 1.2 W/cm2. Subsequently, under fixed deposition conditions (deposition rate and substrate temperature), a growth of Cu(In,Ga)Se2 (CIGS) films was carried out on the Mo-coated SLG substrates, using the 3-stage growth process of the physical vapor deposition (PVD) technique.High-Resolution Scanning Electron Microscopy (HRSEM) was used to examine the Mo and CIGS films morphology. X-Ray Diffraction (XRD) was applied to study in detail the microstructure of Mo and CIGS films. Where, the films’ crystal structure including the preferred orientation and the lattice parameters were determined by the θ/2θ XRD technique and by applying Cohen’s least-square method. Furthermore, Atomic Force Microscopy (AFM) was used to determine the root-mean-square (RMS) surface roughness of the CIGS films.

scholarly journals PREPARATION AND CHARACTERIZATION OF CDO-NIO NANOCOMPOSITES USING LASER PULSE DEPOSITION APPROACH

2021 ◽  
Vol 03 (03) ◽  
pp. 01-09
Author(s):  
Khamees D. MAHMOOD ◽  
Kadhim A. AADIM ◽  
Mohammed G. HAMMED
Keyword(s):  
Laser Pulse ◽  
Morphological Properties ◽  
X Ray Diffraction ◽  
Energy Band Gap ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Pulse Deposition ◽  
Deposited Films

In this manuscript, CdO-NiO nanocomposites (in the form of thin film) with particular concentrations are paper using laser pulse deposition technique under the effect of different laser energies (300, 400, 500, and 600 mJ). Furthermore, the structural, morphological, and optical analyses are thoroughly investigated. In particular, well-oriented deposited films are observed by using X-ray diffraction technique, while the morphological properties are investigated using two different techniques namely field emission scanning electron microscopy and atomic force microscopy which have revealed small nanoparticles with approximate diameter of 50 nm and average surface roughness ranging between 6.5 and 20.3 nm for laser energies of 400 and 600 mJ, respectively. Continuously, the optical technique applied which used UV-Vis analysis has showed cut-off phenomenon at around 339 nm. In the meanwhile, the energy band gap for the deposited films was found to be within the range of 2.2 and 2.4 eV, as a result of different laser energies.

scholarly journals Surface micromorphology analysis of Cu/Ni nanocomposite thin films by power spectra density and fractal geometry

2020 ◽  
Vol 38 (2) ◽  
pp. 328-333
Author(s):  
Kimia Nikpasand ◽  
Seyed Mohammad Elahi ◽  
Amir Hossein SarI ◽  
Arash Boochani
Keyword(s):  
Rf Sputtering ◽  
Power Spectra ◽  
Morphological Properties ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Power Spectral ◽  
Surface Micromorphology ◽  
Afm Analysis

AbstractCopper (Cu) and nickel (Ni) nanoparticles have been grown simultaneously on glass and silicon substrates by RF sputtering method to form three Cu/Ni nanocomposites at different deposition times. The existence of Cu and Ni peaks in the X-ray diffraction (XRD) profiles confirms the crystalline structure of samples with Cu and Ni atomic content which have also been characterized by Rutherford backscattering (RBS) method. Moreover, the structural and morphological properties of the prepared nanocomposites have been compared with respect to their morphologies by means of atomic force microscopy (AFM) analysis. In order to compare the surface roughness over different spatial frequency ranges and evaluate surface quality, power spectral density (PSD) of each sample has been extracted from AFM data and also, the experimental and theoretical results have been compared. The fractal nature of these nanocomposites has been finally discussed.

Spin Coating Effect on Structural and Morphological Properties for CdS/Glass Nanostructures

2014 ◽  
Vol 925 ◽  
pp. 175-179
Author(s):  
Y. Al-Douri
Keyword(s):  
Spin Coating ◽  
Sol Gel ◽  
Theoretical Data ◽  
Morphological Properties ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Interplaner Distance ◽  
Coating Method ◽  
Good Agreement

CdS/glass nanostructures are prepared at 400 °C by sol-gel spin coating method without catalyst. These nanostructures have been characterized by analyzed using X-ray diffraction (XRD) and atomic force microscopy (AFM). The grin size, full width half maxima, miller indices, strain, dislocation density, lattice constant and interplaner distance are measured. The measured and calculated results showed a good agreement with other experimental and theoretical data.

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