Synthesis and Characterization of Amorphous Metallic Alloy Thin Films for MEMS Applications

2003 ◽  
Vol 806 ◽  
Author(s):  
Senthil N Sambandam ◽  
Shekhar Bhansali ◽  
Venkat R. Bhethanabotla

ABSTRACTMicrostructures of multi-component amorphous metallic glass alloys are becoming increasingly important due to their excellent mechanical properties and low coefficient of friction. In this work, thin films of Zr-Ti-Cu-Ni-Be have been deposited by DC magnetron sputtering in view of exploring their potential technological applications in fields such as Micro Electro Mechanical Systems (MEMS). Their structure, composition, surface morphology, mechanical properties viz., hardness and Young's modulus were analyzed using X-Ray Diffraction (XRD), Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM) and Nanoindentation. Influence of the deposition parameters of sputtering pressure and power upon the composition and surface morphology of these films has been evidenced by SEM, and AFM analysis, showing that such a process yields very smooth films with target composition at low sputtering pressures. These studies are useful in understanding the multicomponent sputtering process.

Cerâmica ◽  
2002 ◽  
Vol 48 (305) ◽  
pp. 38-42 ◽  
Author(s):  
M. I. B. Bernardi ◽  
E. J. H. Lee ◽  
P. N. Lisboa-Filho ◽  
E. R. Leite ◽  
E. Longo ◽  
...  

The synthesis of TiO2 thin films was carried out by the Organometallic Chemical Vapor Deposition (MOCVD) method. The influence of deposition parameters used during growth on the final structural characteristics was studied. A combination of the following experimental parameters was studied: temperature of the organometallic bath, deposition time, and temperature and substrate type. The high influence of those parameters on the final thin film microstructure was analyzed by scanning electron microscopy with electron dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction.


2003 ◽  
Vol 780 ◽  
Author(s):  
C.Z. Dinu ◽  
R. Tanasa ◽  
V.C. Dinca ◽  
A. Barbalat ◽  
C. Grigoriu ◽  
...  

AbstractPulsed Laser Deposition method (PLD) was used to grow nitinol (NiTi) thin films with goal of investigating their biocompatibility. High purity Ni and Ti targets were alternatively ablated in vacuum with a laser beam (λ=355 nm, 10 Hz) and the material was collected on room temperature Ti substrates. X-ray diffraction, scanning electron microscopy, energy dispersive spectroscopy and atomic force microscopy analyses have been performed to investigate the chemical composition, crystalline structure and surface morphology of the NiTi films. The nitinol layers biocompatibility has been tested using as a metric the extent to whichthe cells adhereduring the culture period on the surface of NiTi layers deposited on Ti substrates. Vero and fibroblast cell lines dispersed into MEM (Eagle) solution containing 8% fetal bovine serum, at 37° C, were used for tests. Preliminary studies indicate that the interaction at the interface is specifically controlled by the surface morphology, (especially by surface roughness), and by the chemical state of the surface. Cell behavior after contact with NiTi/Ti structure for different intervals (18, 22 and 25 days for the Vero cells, and after 10 and 25 days for fibroblasts) supports the conclusion that NiTi is a very good candidate as a biocompatible material.


2007 ◽  
Vol 14 (05) ◽  
pp. 873-878 ◽  
Author(s):  
HYUN KYOUNG YANG ◽  
JONG WON CHUNG ◽  
BYUNG KEE MOON ◽  
BYUNG CHUN CHOI ◽  
JUNG HYUN JUNG ◽  
...  

Surface morphology and crystallinity of YVO 4: Sm 3+ thin films have an influence on the photoluminescence characteristics. The YVO 4: Sm 3+ films have been deposited on Al 2 O 3 (0001) substrates using pulsed laser deposition method. The films were grown at the various substrate temperatures changing from 500 to 700°C. The crystallinity and surface morphology of the films were investigated using X-ray diffraction (XRD) and atomic force microscopy (AFM), respectively. The results of XRD showed that YVO 4: Sm 3+ films had a zircon structure and AFM study revealed that the films consisted of homogeneous grains ranging from 100 to 400 nm depending on the deposition conditions. The photoluminescence spectra were measured at room temperature and the emitted radiation was dominated by the red emission peak at 620 nm radiated from the transition of 5 D 0-7 F 2. The crystallinity, surface morphology, and photoluminescence spectra of thin-film phosphors were highly dependent on the substrate temperature. The surface roughness and photoluminescence intensity of the films showed similar behavior as a function of substrate temperature.


2001 ◽  
Vol 697 ◽  
Author(s):  
A.K. Sikder ◽  
I. M. Irfan ◽  
Ashok Kumar ◽  
Robert Durvin ◽  
Mark McDonough ◽  
...  

Mechanical properties of thin films differ significantly from those of bulk materials due to the effects of interfaces, microstructure and thick underlying substrates. In this study we will present the results of nanoindentation tests to evaluate mechanical properties of nitride (TiN, ZrN, CrN, TiCN and TiAlN) thin films. Films were coated on steel substrates using cathodic arc deposition technique. Surface morphology and roughness of the samples are investigated using atomic force microscopy (AFM). Films were also characterized by x-ray diffraction (XRD) technique. Nanoindentation technique along with AFM and XRD methods are very useful for characterizing hard thin coatings.


2001 ◽  
Vol 672 ◽  
Author(s):  
G. Wei ◽  
J. Du ◽  
A. Rar ◽  
J. A. Barnard

ABSTRACTThe nanoindentation behavior of DC magnetron sputtered 10 nm Cu and 10 nm Cu/2 nm Cr thin films deposited on Si (100) has been studied using a Hysitron nanomechanical system. X- ray diffraction and X-ray reflectivity were used to measure the film structure and film thickness, respectively. The grain size and orientation of Cu and Cu/Cr thin films were measured by TEM. Atomic force microscopy (AFM) was used to evaluate the surface morphology and roughness. At the same load, the nanoindentaion displacement of Cu/Cr is smaller than that for Cu, i.e., the 2nm thick Cr underlayer enhances the hardness of Cu. X-ray, TEM, and AFM results show that the grain size of Cu/Cr (< 15 nm) is actually larger than Cu (∼ 3 nm) indicating that the inverse Hall-Petch relationship may be operative.


2001 ◽  
Vol 697 ◽  
Author(s):  
Xiaowu Fan ◽  
Rigoberto C. Advincula

AbstractRecently, we have investigated the electrostatic layer-by-layer (ELBL) deposition of polycation and clay platelet ultrathin films. We have investigated the properties of these films using techniques such as ellipsometry, X-ray diffraction and atomic force microscopy (AFM). In this work, we report our results regarding the formation of this type of hybrid ultrathin films focusing on their mechanical properties as probed by nanoindentation experiments. Structural information such as film thickness, platelet coverage, surface morphology, roughness, etc., is important parameters for their potential use as coatings. We have investigated the relationship of several of these parameters with their mechanical hardness and modulus properties as a function of indentor probe depth in nanoindentation experiments. The ultrathin films have remarkable mechanical properties very different from most polymer ultrathin films.


Coatings ◽  
2020 ◽  
Vol 10 (8) ◽  
pp. 720
Author(s):  
Chun Guo ◽  
Mingdong Kong

Optical and mechanical properties of multilayer coatings depend on the selected layer materials and the deposition technology; therefore, knowledge of the performances of thin films is essential. In the present work, titanium dioxide (TiO2) and silicon dioxide (SiO2) thin films have been prepared by plasma ion-assisted deposition (PIAD). The optical, structural, and mechanical properties of thin films have been investigated using spectrometer/ellipsometer, X-ray diffraction (XRD), atomic force microscopy (AFM), and laser interferometer. The results show that TiO2 film fabricated by PIAD induces a high refractive index, wide optical band gap, amorphous structure, smooth surface, and tensile stress. In the case of SiO2 film, high bias voltage leads to dense structure and compressive stress. As an application, a three-wavelength high reflectance at 632.8, 808, and 1550 nm was optimized and deposited. The dependence of total stress in the multilayer on the substrate temperature was studied as well. In conclusion, it was demonstrated that PIAD is an effective method for the preparation of ultralow stress TiO2/SiO2 multilayer films. The achieved stress was as low as 1.4 MPa. The result could provide guidance to the stress optimization of most optical components without prefiguring, backside coating, and postdeposition treatments.


2015 ◽  
Vol 22 (02) ◽  
pp. 1550020 ◽  
Author(s):  
KHALIQ MAHMOOD ◽  
SHAZIA BASHIR ◽  
MAHREEN AKRAM ◽  
ASMA HAYAT ◽  
FAIZAN-Ul-HAQ ◽  
...  

Pulse laser deposited thin films of TiN are irradiated by 1 MeV carbon (C+) ions beam for various doses ranging 0.4 to 2.8 × 1014 ions/cm2. Atomic force microscopy (AFM) analysis reveals the formation of hillocks like structures after ion irradiation. X-ray diffraction (XRD) investigations show that the film crystallinity increases for lower doses ranging from 0.4 to 1.2 × 1014 ions/cm2 and decreases for higher doses (2 to 2.8 × 1014 ions/cm2) of ions. No new bands are identified from Raman spectroscopy. However, a noticeable change in microhardness has been observed. The hillock densities as well as hardness are strongly dependent upon ion dose.


1995 ◽  
Vol 382 ◽  
Author(s):  
Martin Pehnt ◽  
Douglas L. Schulz ◽  
Calvin J. Curtis ◽  
Helio R. Moutinho ◽  
Amy Swartzlander ◽  
...  

ABSTRACTIn this article we report the first nanoparticle-derived route to smooth, dense, phase-pure CdTe thin films. Capped CdTe nanoparticles were prepared by injection of a mixture of Cd(CH3)2, (n-C8H17)3 PTe and (n-C8H17)3P into (n-C8H17)3PO at elevated temperatures. The resultant nanoparticles 32-45 Å in diameter were characterized by x-ray diffraction, UV-Vis spectroscopy, transmission electron microscopy, thermogravimetric analysis and energy dispersive x-ray spectroscopy. CdTe thin film deposition was accomplished by dissolving CdTe nanoparticles in butanol and then spraying the solution onto SnO2-coated glass substrates at variable susceptor temperatures. Smooth and dense CdTe thin films were obtained using growth temperatures approximately 200 °C less than conventional spray pyrolysis approaches. CdTe films were characterized by x-ray diffraction, UV-Vis spectroscopy, atomic force microscopy, and Auger electron spectroscopy. An increase in crystallinity and average grain size as determined by x-ray diffraction was noted as growth temperature was increased from 240 to 300 °C. This temperature dependence of film grain size was further confirmed by atomic force microscopy with no remnant nanocrystalline morphological features detected. UV-Vis characterization of the CdTe thin films revealed a gradual decrease of the band gap (i.e., elimination of nanocrystalline CdTe phase) as the growth temperature was increased with bulk CdTe optical properties observed for films grown at 300 °C.


2012 ◽  
Vol 1424 ◽  
Author(s):  
M. A. Mamun ◽  
A. H. Farha ◽  
Y. Ufuktepe ◽  
H. E. Elsayed-Ali ◽  
A. A. Elmustafa

ABSTRACTNanomechanical and structural properties of pulsed laser deposited niobium nitride thin films were investigated using X-ray diffraction, atomic force microscopy, and nanoindentation. NbN film reveals cubic δ-NbN structure with the corresponding diffraction peaks from the (111), (200), and (220) planes. The NbN thin films depict highly granular structure, with a wide range of grain sizes that range from 15-40 nm with an average surface roughness of 6 nm. The average modulus of the film is 420±60 GPa, whereas for the substrate the average modulus is 180 GPa, which is considered higher than the average modulus for Si reported in the literature due to pile-up. The hardness of the film increases from an average of 12 GPa for deep indents (Si substrate) measured using XP CSM and load control (LC) modes to an average of 25 GPa measured using the DCM II head in CSM and LC modules. The average hardness of the Si substrate is 12 GPa.


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