scholarly journals 3D Printed Pressure Sensor Based on Surface Acoustic Wave Resonator

2021 ◽  
Vol 21 (3) ◽  
pp. 76-81
Author(s):  
Baofa Hu ◽  
Zhiwei Li ◽  
Yuanjie Wan ◽  
Peng Zhou ◽  
Chunquan Zhang ◽  
...  
Keyword(s):  
Acoustic Wave ◽  
Surface Acoustic Wave ◽  
Pressure Sensor ◽  
Pressure Sensors ◽  
Pressure Sensing ◽  
Wave Resonator ◽  
Mems Technology ◽  
3D Printed ◽  
Temperature And Pressure ◽  
Saw Resonators

Abstract This paper reports a 3-dimentional (3D) pressure sensor based on surface acoustic wave (SAW) resonators. The SAW resonators were designed and fabricated on 128°Y-X LiNbO3 substrate using the MEMS technology. The pressure sensing structure was 3D-printed using polyactic acid plastic, and two SAW resonators were integrated in the 3D-printed chamber structure for both temperature and pressure sensing. The SAW-based gas pressure sensors demonstrate a sensitivity of 589 ppm/MPa at the pressure range of 100-600 kPa and temperature of 40 °C.

scholarly journals On the Performance Evaluation of Commercial SAW Resonators by Means of a Direct and Reliable Equivalent-Circuit Extraction

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 303
Author(s):  
Giovanni Gugliandolo ◽  
Zlatica Marinković ◽  
Giuseppe Campobello ◽  
Giovanni Crupi ◽  
Nicola Donato
Keyword(s):  
Performance Evaluation ◽  
Acoustic Wave ◽  
Equivalent Circuit ◽  
Surface Acoustic Wave ◽  
Equivalent Circuit Model ◽  
Practical Applications ◽  
Saw Devices ◽  
S Parameter ◽  
Commercial Device ◽  
Saw Resonators

Nowadays, surface acoustic wave (SAW) resonators are attracting growing attention, owing to their widespread applications in various engineering fields, such as electronic, telecommunication, automotive, chemical, and biomedical engineering. A thorough assessment of SAW performance is a key task for bridging the gap between commercial SAW devices and practical applications. To contribute to the accomplishment of this crucial task, the present paper reports the findings of a new comparative study that is based on the performance evaluation of different commercial SAW resonators by using scattering (S-) parameter measurements coupled with a Lorentzian fitting and an accurate modelling technique for the straightforward extraction of a lumped-element equivalent-circuit representation. The developed investigation thus provides ease and reliability when choosing the appropriate commercial device, depending on the requirements and constraints of the given sensing application. This paper deals with the performance evaluation of commercial surface acoustic wave (SAW) resonators by means of scattering (S-) parameter measurements and an equivalent-circuit model extracted using a reliable modeling procedure. The studied devices are four TO-39 packaged two-port resonators with different nominal operating frequencies: 418.05, 423.22, 433.92, and 915 MHz. The S-parameter characterization was performed locally around the resonant frequencies of the tested SAW resonators by using an 8753ES Agilent vector network analyzer (VNA) and a home-made calibration kit. The reported measurement-based study has allowed for the development of a comprehensive and detailed comparative analysis of the performance of the investigated SAW devices. The characterization and modelling procedures are fully automated with a user-friendly graphical user interface (GUI) developed in the Python environment, thereby making the experimental analysis faster and more efficient.

CMOS-MEMS Based Current Mirror MOSFET Embedded Pressure Sensor for Healthcare and Biomedical Applications

2013 ◽  
Vol 647 ◽  
pp. 315-320 ◽  
Author(s):  
Pradeep Kumar Rathore ◽  
Brishbhan Singh Panwar
Keyword(s):  
Pressure Sensor ◽  
Biomedical Applications ◽  
Circuit Simulation ◽  
Applied Pressure ◽  
Pressure Sensors ◽  
Cmos Technology ◽  
Current Mirror ◽  
Sensing Element ◽  
Pressure Sensing ◽  
Cmos Mems

This paper reports on the design and optimization of current mirror MOSFET embedded pressure sensor. A current mirror circuit with an output current of 1 mA integrated with a pressure sensing n-channel MOSFET has been designed using standard 5 µm CMOS technology. The channel region of the pressure sensing MOSFET forms the flexible diaphragm as well as the strain sensing element. The piezoresistive effect in MOSFET has been exploited for the calculation of strain induced carrier mobility variation. The output transistor of the current mirror forms the active pressure sensing MOSFET which produces a change in its drain current as a result of altered channel mobility under externally applied pressure. COMSOL Multiphysics is utilized for the simulation of pressure sensing structure and Tspice is employed to evaluate the characteristics of the current mirror pressure sensing circuit. Simulation results show that the pressure sensor has a sensitivity of 10.01 mV/MPa. The sensing structure has been optimized through simulation for enhancing the sensor sensitivity to 276.65 mV/MPa. These CMOS-MEMS based pressure sensors integrated with signal processing circuitry on the same chip can be used for healthcare and biomedical applications.

Highly sensitive thick diaphragm-based surface acoustic wave pressure sensor

2021 ◽  
pp. 112935
Author(s):  
Maria Muzamil Memon ◽  
Shuliang Pan ◽  
Jiang Wan ◽  
Tao Wang ◽  
Wanli Zhang
Keyword(s):  
Acoustic Wave ◽  
Surface Acoustic Wave ◽  
Pressure Sensor ◽  
Wave Pressure ◽  
Highly Sensitive

Pressure sensor based on surface acoustic wave resonators

2008 ◽  
Author(s):  
M. Benetti ◽  
D. Cannata ◽  
F. Di Pietrantonio ◽  
C. Marchiori ◽  
P. Persichetti ◽  
...  
Keyword(s):  
Acoustic Wave ◽  
Surface Acoustic Wave ◽  
Pressure Sensor ◽  
Acoustic Wave Resonators

Surface acoustic wave resonator from thick MOVPE-grown layers of GaN(0001) on sapphire

2002 ◽  
Vol 743 ◽  
Author(s):  
Sverre V. Pettersen ◽  
Thomas Tybell ◽  
Arne Rønnekleiv ◽  
Stig Rooth ◽  
Veit Schwegler ◽  
...  
Keyword(s):  
Acoustic Wave ◽  
Surface Acoustic Wave ◽  
Electromechanical Coupling ◽  
Film Surface ◽  
Center Frequency ◽  
Electromechanical Coupling Coefficient ◽  
Nitride Film ◽  
Wave Resonator ◽  
Lift Off ◽  
Definition Of

ABSTRACTWe report on fabrication and measurement of a surface acoustic wave resonator prepared on ∼10m thick GaN(0001) films. The films were grown by metal-organic vapor phase epitaxy on a c-plane sapphire substrate. The surface morphology of the films were examined with scanning electron and atomic force microscopy. A metallic bilayer of Al/Ti was subsequently evaporated on the nitride film surface. Definition of the resonator interdigital transducers, designed for a wavelength of λ=7.76m, was accomplished with standard UV lithography and lift-off. S-parameter measurements showed a resonator center frequency f0=495MHz at room temperature, corresponding to a surface acoustic wave velocity of 3844m/s. The insertion loss at center frequency was measured at 8.2dB, and the loaded Q-factor was estimated at 2200. Finally, measurements of the resonator center frequency for temperatures in the range 25–155°C showed a temperature coefficient of -18ppm/°C. The intrinsic GaN SAW velocity and electromechanical coupling coefficient were estimated at νSAW=383 1m/s and K2=1.8±0.4·10−3.

Sign in / Sign up

Export Citation Format

Share Document