Properties of a-Si:N:H films beneficial for silicon solar cells applications

2012 ◽  
Vol 20 (2) ◽  
Author(s):  
B. Swatowska ◽  
T. Stapiński ◽  
S. Zimowski
Keyword(s):  
Friction Coefficient ◽  
Vapour Deposition ◽  
Energy Gap ◽  
Chemical Vapour ◽  
Structural Defects ◽  
Silicon Solar Cells ◽  
Ftir Analysis ◽  
Amorphous Silicon Nitride ◽  
Logical Investigations ◽  
Effective Reflectivity

AbstractAmorphous silicon-nitride thin films a-Si:N:H were obtained by plasma enhanced chemical vapour deposition (PECVD) method from SiH4+NH3 at 13.56 MHz. The process parameters were chosen to obtain the films of properties suitable for optoelectronic and mechanical applications. FTIR analysis of a-Si:N:H films indicated the presence of numerous hydrogen bonds (Si-H and N-H) which passivate structural defects in multicrystalline silicon and react with impurities. The morpho-logical investigations show that the films are homogeneous. The deposition of a-Si:N:H layers leads to the decrease in friction coefficient of used substrates. Optical properties were optimised to obtain the films of low effective reflectivity, large energy gap Eg from 2.4 to 2.9 eV and refractive index in the range of 1.9 to 2.2. Reduction of friction coefficient for monocrystalline silicon after covering with a-Si:N:H films was observed: from 0.25 to 0.18 for 500 cycles.

Electronic Properties of Microcrystalline Silicon

1997 ◽  
Vol 467 ◽  
Author(s):  
R. Carius ◽  
F. Finger ◽  
U. Backhausen ◽  
M. Luysberg ◽  
P. Hapke ◽  
...  
Keyword(s):  
Vapour Deposition ◽  
Volume Fraction ◽  
Crystalline Silicon ◽  
Chemical Vapour ◽  
Structural Defects ◽  
Photoluminescence Properties ◽  
Crystalline Volume Fraction ◽  
Microcrystalline Silicon ◽  
Photothermal Deflection Spectroscopy ◽  
Photothermal Deflection

ABSTRACTThe electronic and optical properties of microcrys tall ine silicon films prepared by plasma enhanced chemical vapour deposition are investigated with Hall-effect, electrical conductivity, photothermal deflection spectroscopy and photoluminescence measurements. In particular, the influence of the grain size and the crystalline volume fraction on the conductivity, the carrier density and the Hall mobility is investigated in highly doped films. A percolation model is proposed to describe the observed transport data. Photoluminescence properties were studied in un-doped films. It is proposed that the photoluminescence is due to recombination at structural defects similar to those observed in crystalline silicon.

scholarly journals p+ polycrystalline silicon growth via hot wire chemical vapour deposition for silicon solar cells

2020 ◽  
Vol 705 ◽  
pp. 137978 ◽  
Author(s):  
Edris Khorani ◽  
Tudor E. Scheul ◽  
Antulio Tarazona ◽  
John Nutter ◽  
Tasmiat Rahman ◽  
...  
Keyword(s):  
Solar Cells ◽  
Chemical Vapour Deposition ◽  
Polycrystalline Silicon ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Silicon Solar Cells ◽  
Hot Wire ◽  
Silicon Growth

Equilibration in Amorphous Silicon Nitride Alloys

1995 ◽  
Vol 377 ◽  
Author(s):  
Bruce Dunnett ◽  
Christopher H. Cooper ◽  
Darren T. Murley ◽  
Roderick A. G. Gibson ◽  
David I. Jones ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Growth Temperature ◽  
Vapour Deposition ◽  
Defect Density ◽  
Chemical Vapour ◽  
Amorphous Silicon Nitride ◽  
Photothermal Deflection Spectroscopy ◽  
Photothermal Deflection ◽  
Deposition Conditions

ABSTRACTSeveral series of amorphous silicon nitride thin films have been grown by plasma-enhanced chemical vapour deposition, where the ratio of ammonia and silane feed gases was held constant for each series while the deposition temperature was varied from 160 °C to 550 °C, and all other deposition conditions were held constant. Photothermal Deflection Spectroscopy measurements were used to determine the Urbach slope E0 and the defect density ND. It is found that ND is determined by E0 for most of these samples, suggesting that defect equilibration occurs in a-SiNx:H for x up to at least 0.6. The growth temperature at which the disorder is minimised increases to higher values with increasing x, which is explained in terms of a hydrogen-mediated bond equilibration reaction. Fourier Transform Infra Red spectroscopy measurements were performed to determine the changes in hydrogen bonding with growth temperature. The results suggest that a second bond equilibration reaction also occurs at the growing surface, but that equilibrium cannot be reached at higher temperatures because of hydrogen evolution from Si-H bonds.

Some Recent Results on the 3C-SiC Structural Defects

2010 ◽  
Vol 159 ◽  
pp. 39-48 ◽  
Author(s):  
Maya Marinova ◽  
Alkyoni Mantzari ◽  
Efstathios K. Polychroniadis
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Layer Growth ◽  
Structural Defects ◽  
Vapour Transport ◽  
Transmission Electron ◽  
Continuous Feed ◽  
The Common

This work presents some recent results on the 3C-SiC structural defects, studied by Transmission Electron Microscopy (TEM). The samples studied were grown in several laboratories, using different methods. Commonly used methods for growth are Sublimation Epitaxy (SE), Physical Vapour Transport (PVT), Continuous Feed Physical Vapour Transport (CF-PVT), Chemical Vapour Deposition (CVD), and Liquid Phase Epitaxy (LPE). In all these methods, for both bulk and epitaxial layer growth, substrates from other polytypes are exploited like the common hexagonal polytypes 4H- and 6H-SiC or 3C-SiC seeds both in (111) and (100) orientation.

Effect of hydrogen on graphene growth from solid waste products by chemical vapour deposition: friction coefficient properties

2018 ◽  
Vol 72 (2) ◽  
pp. 181-188
Author(s):  
Noor Ayuma Mat Tahir ◽  
Mohd Fadzli Bin Abdollah ◽  
Noreffendy Tamaldin ◽  
Mohd Rody Bin Mohamad Zin ◽  
Hilmi Amiruddin
Keyword(s):  
Friction Coefficient ◽  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Dry Sliding ◽  
Waste Products ◽  
Content Type ◽  
Graphene Growth ◽  
Cvd Method ◽  
Sliding Test

Purpose The purpose of this paper is to study the effect of hydrogen (H2) gas on the graphene growth from fruit cover plastic waste (FCPW) and oil palm fibre (OPF), as a solid feedstock, towards the coefficient of friction (COF) properties. Design/methodology/approach Graphene film growth on copper (Cu) substrate was synthesised from FCPW and OPF, as a solid feedstock, using the chemical vapour deposition (CVD) method, at atmospheric pressure. The synthesised graphene was characterised using Raman spectroscopy, Scanning Electron Microscopy (SEM) and Electron Dispersed Spectroscopy (EDS). Surface hardness and roughness were measured using a nano-indenter and surface profilometer, respectively. Then, a dry sliding test was executed using a ball-on-disc tribometer at constant speed, sliding distance and load, with coated and uncoated copper sheet as the counter surface. Findings The presence of H2 gas reduced the running-in time of the dry sliding test. However, there is no significant effect at the constant COF region, where the graphene growth from FCPW shows the lowest COF among other surfaces. Research limitations/implications This paper is limited to graphene growth using the CVD method with selected parameters. Originality/value To the authors’ knowledge, this is the first paper on growing graphene from palm oil fiber via the CVD method and its subsequent analysis, based on friction coefficient properties.

The Effect of Hydrogen Concentration on Chemical Vapour Deposition Synthesis of β-Ga2O3 Nanostructures

2020 ◽  
Vol 301 ◽  
pp. 27-34 ◽  
Author(s):  
Peverga Rex Jubu ◽  
Fong Kwong Yam ◽  
Iorkyaa Ahemen
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Energy Gap ◽  
Chemical Vapour ◽  
Average Crystallite Size ◽  
Hydrogen Gas ◽  
Growth Time ◽  
Carrier Gas ◽  
Hydrogen Flow ◽  
Scalable Synthesis

Gallium oxide (β-Ga2O3) nanostructures (NSs) have been successfully obtained through a simple scalable synthesis via thermal evaporation of gallium (III) oxide powder in hydrogen-ambient chemical vapour deposition (HACVD) without the presence of carrier gas. β-Ga2O3 was deposited on Si substrate by evaporating the source material at 1000 C in a regulated hydrogen reducing atmosphere, for 120 min growth time. Hydrogen ambient was regulated by varying the flow to observed changes in the morphological, structural and optical properties of films. The samples were characterized using high resolution X-ray diffraction (HR-XRD), field-emission scanning electron microscope (FE-SEM) and UV-vis-NIR spectrophotometer. The density and quality of NSs was observed to increase with hydrogen gas supply. The rarely reported 1) dominant XRD peak of β-Ga2O3 was obtained in the event of eliminating the carrier gas which is part of the usual recipe for CVD technique. The average crystallite size and energy gap of the synthesized material was found to decrease with increased hydrogen flow rate from 176.5 to 39.8 nm and 5.47 to 4.83 eV, respectively.

The Raman Properties of Ag Doped ZnO Microrods Synthesized by Chemical Vapour Deposition

2014 ◽  
Vol 941-944 ◽  
pp. 391-394
Author(s):  
Li Na Wang ◽  
Dan Zhou ◽  
Sa Huo ◽  
Zhong Qi Luan
Keyword(s):  
Chemical Vapour Deposition ◽  
Vapour Deposition ◽  
Vibrational Mode ◽  
Chemical Vapour ◽  
Structural Defects ◽  
X Ray Diffraction ◽  
X Ray ◽  
Sapphire Substrates ◽  
Local Vibrational Mode ◽  
Doped Zno

Ag doped ZnO microrods are prepared on c-plane sapphire substrates by chemical vapour deposition method at high temperature.The morphology, structure and optical properties were investigated by scanning electron microscopy, X-ray diffraction and Raman spectrum, respectively. The prepared Ag doped ZnO microrods have good preferred orientation with very limited structural defects. The Raman bands indicates that a tensile stress existed in the sample and an additional local vibrational mode related to Ag is also found which can be used to confirm the existence of Ag in the Ag doped ZnO microrods.

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