Recent Progress in New Acetal-based Resist for Electron Beam Lithography

Electron beam lithography (EBL) and ion beam lithography (IBL) are extremely promising nanofabrication techniques for building nano-electronic devices due to their outstanding physical and electronic properties. In this review, an overview of EBL and IBL and a comparison of nanoelectronics fabricated based on four types of materials, namely graphene, ZnO, TiO2 and Ge, are presented. In each type of material, numerous practical examples are also provided in the illustration. Later, the strengths and weaknesses of EBL and IBL are presented in details. Finally, the similarities and differences between the two techniques are discussed and concluded.

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Recent Progress In In Situ Electron-beam Lithography Of GaAs

LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics ◽

10.1109/leosst.1991.639021 ◽

2005 ◽

Author(s):

Y. Sugimoto ◽

K. Akita ◽

H. Kawanishi

Keyword(s):

Electron Beam ◽

Electron Beam Lithography ◽

Recent Progress

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Recent Progress in Downsizing FeFETs for Fe-NAND Application

MRS Proceedings ◽

10.1557/opl.2011.977 ◽

2011 ◽

Vol 1337 ◽

Cited By ~ 1

Author(s):

Le Van Hai ◽

Mitsue Takahashi ◽

Shigeki Sakai

Keyword(s):

Electron Beam ◽

Electron Beam Lithography ◽

Inductively Coupled Plasma ◽

Field Effect ◽

Recent Progress ◽

Field Effect Transistors ◽

Drain Current ◽

Electrical Characteristics ◽

Gate Stacks ◽

Inductively Coupled

ABSTRACTSub-micrometer ferroelectric-gate field-effect transistors (FeFETs) of 0.56 μm and 0.50 μm gate lengths were successfully fabricated for Fe-NAND cells. Gate stacks of the FeFETs were Pt/SrBi2Ta2O9(SBT)/Hf-Al-O/Si. The gate stacks were formed by electron beam lithography and inductively coupled plasma reactive ion etching (ICP-RIE). Ti and SiO2 hard masks were used for the 0.56 μm- and 0.50 μm-gate FeFETs, respectively, in the ICP-RIE process. Steep SBT sidewalls with the angle of 85° were obtained by using the SiO2 hard masks while 76° sidewalls were shown using Ti hard masks. All fabricated FeFETs showed good electrical characteristics. Drain current hysteresis showed larger memory windows than 0.95 V when the gate voltages were swung between 1±5 V. The FeFETs showed stable endurance behaviors over 108 program/erase cycles. Drain current retention properties of the FeFETs were good so that the drain current on/off ratios did not show practical changes after 3 days.

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Lithography below 100 nm

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100074367 ◽

1983 ◽

Vol 41 ◽

pp. 96-99

Author(s):

L. D. Jackel

Keyword(s):

Spatial Distribution ◽

Electron Beam ◽

Electron Scattering ◽

Electron Beam Lithography ◽

Substrate Material ◽

Local Electron ◽

Electron Dose ◽

Positive Resist ◽

Exposure Process

Most production electron beam lithography systems can pattern minimum features a few tenths of a micron across. Linewidth in these systems is usually limited by the quality of the exposing beam and by electron scattering in the resist and substrate. By using a smaller spot along with exposure techniques that minimize scattering and its effects, laboratory e-beam lithography systems can now make features hundredths of a micron wide on standard substrate material. This talk will outline sane of these high- resolution e-beam lithography techniques.We first consider parameters of the exposure process that limit resolution in organic resists. For concreteness suppose that we have a “positive” resist in which exposing electrons break bonds in the resist molecules thus increasing the exposed resist's solubility in a developer. Ihe attainable resolution is obviously limited by the overall width of the exposing beam, but the spatial distribution of the beam intensity, the beam “profile” , also contributes to the resolution. Depending on the local electron dose, more or less resist bonds are broken resulting in slower or faster dissolution in the developer.

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Fabrication of Si photonic waveguides by electron beam lithography using improved proximity effect correction

Japanese Journal of Applied Physics ◽

10.35848/1347-4065/abc78d ◽

2020 ◽

Vol 59 (12) ◽

pp. 126502

Author(s):

Moataz Eissa ◽

Takuya Mitarai ◽

Tomohiro Amemiya ◽

Yasuyuki Miyamoto ◽

Nobuhiko Nishiyama

Keyword(s):

Electron Beam ◽

Proximity Effect ◽

Electron Beam Lithography ◽

Photonic Waveguides ◽

Proximity Effect Correction

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Salicidation process for submicrometre gate MOSFET fabrication using a resistless electron beam lithography process

Electronics Letters ◽

10.1049/el:19990817 ◽

1999 ◽

Vol 35 (15) ◽

pp. 1283 ◽

Cited By ~ 2

Author(s):

S. Michel ◽

E. Lavallée ◽

J. Beauvais ◽

J. Mouine

Keyword(s):

Electron Beam ◽

Electron Beam Lithography ◽

Lithography Process

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Nanooptical elements for visual verification

Scientific Reports ◽

10.1038/s41598-021-81950-w ◽

2021 ◽

Vol 11 (1) ◽

Author(s):

Alexander Goncharsky ◽

Anton Goncharsky ◽

Dmitry Melnik ◽

Svyatoslav Durlevich

Keyword(s):

Electron Beam ◽

Electron Beam Lithography ◽

Mass Production ◽

Optical Element ◽

Visual Image ◽

Zero Order ◽

Diffractive Optical Elements ◽

Optical Elements ◽

Standard Equipment ◽

Diffractive Element

AbstractThis paper focuses on the development of flat diffractive optical elements (DOEs) for protecting banknotes, documents, plastic cards, and securities against counterfeiting. A DOE is a flat diffractive element whose microrelief, when illuminated by white light, forms a visual image consisting of several symbols (digits or letters), which move across the optical element when tilted. The images formed by these elements are asymmetric with respect to the zero order. To form these images, the microrelief of a DOE must itself be asymmetric. The microrelief has a depth of ~ 0.3 microns and is shaped with an accuracy of ~ 10–15 nm using electron-beam lithography. The DOEs developed in this work are securely protected against counterfeiting and can be replicated hundreds of millions of times using standard equipment meant for the mass production of relief holograms.

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