scholarly journals THE DEPENDENCE OF REVERSE RECOVERY TIME ON BARRIER CAPACITANCE AND SERIES-ON RESISTANCE IN SCHOTTKY DIODES

2017 ◽  
Author(s):  
OLEKSANDR VEHER ◽  
NATALJA SLEPTSUK ◽  
JANA TOOMPUU ◽  
OLEG KOROLKOV ◽  
TOOMAS RANG
Keyword(s):  
Recovery Time ◽  
Schottky Diodes ◽  
Barrier Capacitance ◽  
Reverse Recovery Time

scholarly journals High Voltage Diffusion-Welded Stacks on the Basis of SiC Schottky Diodes

2016 ◽  
Vol 858 ◽  
pp. 790-794 ◽  
Author(s):  
Oleg Korolkov ◽  
Natalja Sleptsuk ◽  
Paul Annus ◽  
Raul Land ◽  
Toomas Rang
Keyword(s):  
Vertical Integration ◽  
High Voltage ◽  
Recovery Time ◽  
Analytical Approach ◽  
Schottky Diodes ◽  
Reverse Current ◽  
Estimation Of Parameters ◽  
Reverse Voltage ◽  
Zero Bias ◽  
Reverse Recovery Time

In the present work we have considered the prototype of the high-voltage diode stack made on the basis of commercial SiC Schottky diodes. Implementation of vertical integration for four diode chips yielded stack with the reverse current of 25 μA under reverse voltage of 6 kV. The capacitance of the stack at zero bias is reduced more than three times in comparison with initial diodes. Reverse recovery time of the stack was 8.0 ns. This paper proposes a convenient analytical approach to the estimation of parameters of modular compositions with vertical architecture.

Fabrication and Application of 1.7KV SiC-Schottky Diodes

2015 ◽  
Vol 821-823 ◽  
pp. 579-582 ◽  
Author(s):  
Gang Chen ◽  
Song Bai ◽  
A. Liu ◽  
Lin Wang ◽  
Run Hua Huang ◽  
...  
Keyword(s):  
Recovery Time ◽  
Doping Concentration ◽  
Schottky Diodes ◽  
Device Structure ◽  
Reverse Voltage ◽  
Turn On ◽  
Forward Current ◽  
State Resistance ◽  
Drift Layer ◽  
Reverse Recovery Time

High voltage 4H-SiC Ti Schottky junction barrier schottky (JBS) diode with breakdown voltage of 1700 V and forward current of 5 A has been fabricated. A low reverse leakage current below 3.8×10-5A/cm2at the bias voltage of -1700 V has been obtained. The forward on-state current was 5 A at VF= 1.7 V and 15.8 A at VF= 3 V. The active area is 1.5 mm × 1.5 mm. The turn-on voltage is about 0.9 V. The on-state resistance is 3.08 mΩ·cm2. The doping and thickness of the N-type drift layer and the device structure have been performed by numerical simulations. The SiC JBS devices have been fabricated and the processes were in detail. The die was assembled in a TO-220 package. The thickness of the N- epilayer is 17 µm, and the doping concentration is 3.2 × 1015cm−3. The number of floating guard p-rings was chosen to be 25, the distance between the rings was chosen to be 0.7 µm ~ 1.3 µm and the width of the p-rings is 2.5 µm. We use the PECVD SixNy/SiO2as the passivation dielectric and a non photosensitive polyamide as the passivation in the end. The reverse recovery current Irwas 1.26A and the reverse recovery time Trrwas 26ns when the diode was switched from 5A forward current to a reverse voltage of 700V. The reverse recovery electric charge Qrrof 16nC was obtained.

High Voltage and Fast Switching Reverse Recovery Characteristics of 4H-SiC PiN Diode

2014 ◽  
Vol 778-780 ◽  
pp. 841-844 ◽  
Author(s):  
Koji Nakayama ◽  
Shuji Ogata ◽  
Toshihiko Hayashi ◽  
Tetsuro Hemmi ◽  
Atsushi Tanaka ◽  
...  
Keyword(s):  
High Voltage ◽  
Recovery Time ◽  
Carrier Lifetime ◽  
Low Voltage ◽  
Reduction Rate ◽  
Drift Region ◽  
Pin Diode ◽  
Fully Depleted ◽  
Fast Switching ◽  
Reverse Recovery Time

The reverse recovery characteristics of a 4H-SiC PiN diode under higher voltage and faster switching are investigated. In a high-voltage 4H-SiC PiN diode, owing to an increased thickness, the drift region does not become fully depleted at a relatively low voltage Furthermore, an electron–hole recombination must be taken into account when the carrier lifetime is equal to or shorter than the reverse recovery time. High voltage and fast switching are therefore needed for accurate analysis of the reverse recovery characteristics. The current reduction rate increases up to 2 kA/μs because of low stray inductance. The maximum reverse voltage during the reverse recovery time reaches 8 kV, at which point the drift layer is fully depleted. The carrier lifetime at the high level injection is 0.086 μs at room temperature and reaches 0.53 μs at 250 °C.

scholarly journals Effects of Electrostatic Discharge Stress on Current-Voltage and Reverse Recovery Time of Fast Power Diode

2014 ◽  
Vol 14 (4) ◽  
pp. 495-502 ◽  
Author(s):  
Daoheung Bouangeune ◽  
Sang-Sik Choi ◽  
Deok-Ho Cho ◽  
Kyu-Hwan Shim ◽  
Sung-Yong Chang ◽  
...  
Keyword(s):  
Recovery Time ◽  
Electrostatic Discharge ◽  
Current Voltage ◽  
Fast Power ◽  
Power Diode ◽  
Reverse Recovery Time

Temperature Stability of Breakdown Voltage on SiC Power Schottky Diodes with Different Barrier Heights

2005 ◽  
Vol 483-485 ◽  
pp. 933-936 ◽  
Author(s):  
R. Pierobon ◽  
G. Meneghesso ◽  
E. Zanoni ◽  
Fabrizio Roccaforte ◽  
Francesco La Via ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Schottky Diodes ◽  
Electrical Characterization ◽  
Temperature Stability ◽  
Voltage Versus ◽  
Good Thermal Stability ◽  
Barrier Heights ◽  
Schottky Rectifiers ◽  
Reverse Recovery Time

The static and dynamic electrical characterization of power Schottky rectifiers both with Ti and Ni2Si as Schottky metals having low negative coefficient of the breakdown voltage versus temperature will be presented in this paper. The values of the barrier height are respectively 1.28eV and 1.68eV, as extracted using the Tung’s model for inhomogeneous contacts from forward currentvoltage characteristics. These values were found to be in good agreement with those obtained by means of capacitance-voltage measurements. The breakdown voltage shows an almost linear dependence from the temperature for both types of devices. The extracted coefficients are respectively -0.08V/°C and -0.11V/°C, thus guarantying stable and reliable behaviour. Very short reverse recovery time at RT and at 125°C confirms the good thermal stability of these devices.

Application of Silicon Carbide Diode in Ultrasound High Voltage Pulse Protection Circuit

2013 ◽  
Vol 290 ◽  
pp. 115-119
Author(s):  
Shi Yuan Zhou ◽  
Kai Zhang ◽  
Dinguo Xiao ◽  
Chun Guang Xu ◽  
Bo Yang
Keyword(s):  
Silicon Carbide ◽  
Schottky Barrier ◽  
High Voltage ◽  
Voltage Pulse ◽  
Recovery Time ◽  
High Performance ◽  
High Voltage Pulse ◽  
Protection Level ◽  
Protection Circuit ◽  
Reverse Recovery Time

SiC diode (Silicon Carbide Diode) is a newly commercial available Schottky barrier diode with zero reverse-recovery-time, which is a perfect candidate for fabricating high voltage pulse protection circuit in ultrasonic transceiver system. With SiC diode’s high performance, the circuit can deliver 400 volts or higher voltage protection level, which is not an easy job for other kind of diodes. In this article, the theory of diode-bridge protection circuit is briefly discussed, and a SiC diode-bridge protection circuit was fabricated, and some experiments has been done to verify the feasibility of using SiC diodes in diode-bridge protection circuit.

Reverse Recovery Time of Junction Diodes with High Capture Rate of Minority Carriers in the Low Injection Level

1992 ◽  
Vol 31 (Part 1, No. 6A) ◽  
pp. 1836-1837
Author(s):  
Hajime Tomokage ◽  
Tetsuya Yamakawa ◽  
Tokuo Miyamoto ◽  
Masami Morooka
Keyword(s):  
Recovery Time ◽  
Capture Rate ◽  
Injection Level ◽  
Minority Carriers ◽  
Reverse Recovery Time
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