Fabrication and Application of 1.7KV SiC-Schottky Diodes

2015 ◽  
Vol 821-823 ◽  
pp. 579-582 ◽  
Author(s):  
Gang Chen ◽  
Song Bai ◽  
A. Liu ◽  
Lin Wang ◽  
Run Hua Huang ◽  
...  
Keyword(s):  
Recovery Time ◽  
Doping Concentration ◽  
Schottky Diodes ◽  
Device Structure ◽  
Reverse Voltage ◽  
Turn On ◽  
Forward Current ◽  
State Resistance ◽  
Drift Layer ◽  
Reverse Recovery Time

High voltage 4H-SiC Ti Schottky junction barrier schottky (JBS) diode with breakdown voltage of 1700 V and forward current of 5 A has been fabricated. A low reverse leakage current below 3.8×10-5A/cm2at the bias voltage of -1700 V has been obtained. The forward on-state current was 5 A at VF= 1.7 V and 15.8 A at VF= 3 V. The active area is 1.5 mm × 1.5 mm. The turn-on voltage is about 0.9 V. The on-state resistance is 3.08 mΩ·cm2. The doping and thickness of the N-type drift layer and the device structure have been performed by numerical simulations. The SiC JBS devices have been fabricated and the processes were in detail. The die was assembled in a TO-220 package. The thickness of the N- epilayer is 17 µm, and the doping concentration is 3.2 × 1015cm−3. The number of floating guard p-rings was chosen to be 25, the distance between the rings was chosen to be 0.7 µm ~ 1.3 µm and the width of the p-rings is 2.5 µm. We use the PECVD SixNy/SiO2as the passivation dielectric and a non photosensitive polyamide as the passivation in the end. The reverse recovery current Irwas 1.26A and the reverse recovery time Trrwas 26ns when the diode was switched from 5A forward current to a reverse voltage of 700V. The reverse recovery electric charge Qrrof 16nC was obtained.

Development of 1000V SiC JBS Diodes

2013 ◽  
Vol 846-847 ◽  
pp. 741-744
Author(s):  
Gang Chen ◽  
Lin Wang ◽  
Run Hua Huang ◽  
Ao Liu ◽  
Song Bai ◽  
...  
Keyword(s):  
Doping Concentration ◽  
Metal Structure ◽  
Schottky Junction ◽  
Device Structure ◽  
Edge Termination ◽  
Turn On ◽  
Forward Current ◽  
State Resistance ◽  
Drift Layer ◽  
Multilayer Metal

High voltage 4H-SiC Ni Schottky junction barrier schottky (JBS) diode with breakdown voltage of 1000V and forward current of 1A has been fabricated. A low reverse leakage current below 4.7×10-6A/cm2 at the bias voltage of-1000V has been obtained. The forward on-state current was 1A at VF = 2.2V. The chip is 1.3mm×1.3mm. The turn-on voltage is about 1.4V. The on-state resistance is 14.5mΩ·cm2. The doping and thickness of the N-type drift layer and the device structure have been performed by numerical simulations. The SiC JBS devices have been fabricated and the processes were in detail. The die was assembled in a SMB package. The thickness of the N-epilayer is 10μm, and the doping concentration is 4×1015cm3. A floating guard rings edge termination have been used to improve the effectiveness of the edge termination technique. By using WTi/Au multilayer metal structure, the double side Au process of 4H-SiC JBS diode is formed. We use the PECVD SixNy/SiO2 as the passivation dielectric and a non photosensitive polyamide as the passivation in the end.

4.5kV SiC JBS Diodes

2013 ◽  
Vol 347-350 ◽  
pp. 1506-1509 ◽  
Author(s):  
Yong Hong Tao ◽  
Run Hua Huang ◽  
Gang Chen ◽  
Song Bai ◽  
Yun Li
Keyword(s):  
Numerical Simulations ◽  
Breakdown Voltage ◽  
High Voltage ◽  
Current Density ◽  
Doping Level ◽  
Doping Concentration ◽  
Device Structure ◽  
Reverse Voltage ◽  
Edge Termination ◽  
Drift Layer

High voltage 4H-SiC junction barrier schottky (JBS) diode with breakdown voltage higher than 4.5 kV has been fabricated. The doping level and thickness of the N-type drift layer and the device structure have been performed by numerical simulations. The thickness of the device epilayer is 50 μm, and the doping concentration is 1.2×1015 cm3. A floating guard rings edge termination has been used to improve the effectiveness of the edge termination technique. The diodes can block a reverse voltage of at least 4.5 kV, and the on-state current density was 80 A/cm2 at VF =4 V.

scholarly journals High Voltage Diffusion-Welded Stacks on the Basis of SiC Schottky Diodes

2016 ◽  
Vol 858 ◽  
pp. 790-794 ◽  
Author(s):  
Oleg Korolkov ◽  
Natalja Sleptsuk ◽  
Paul Annus ◽  
Raul Land ◽  
Toomas Rang
Keyword(s):  
Vertical Integration ◽  
High Voltage ◽  
Recovery Time ◽  
Analytical Approach ◽  
Schottky Diodes ◽  
Reverse Current ◽  
Estimation Of Parameters ◽  
Reverse Voltage ◽  
Zero Bias ◽  
Reverse Recovery Time

In the present work we have considered the prototype of the high-voltage diode stack made on the basis of commercial SiC Schottky diodes. Implementation of vertical integration for four diode chips yielded stack with the reverse current of 25 μA under reverse voltage of 6 kV. The capacitance of the stack at zero bias is reduced more than three times in comparison with initial diodes. Reverse recovery time of the stack was 8.0 ns. This paper proposes a convenient analytical approach to the estimation of parameters of modular compositions with vertical architecture.

High-Voltage Stacked Diode Package

2015 ◽  
Vol 2015 (1) ◽  
pp. 000225-000230 ◽  
Author(s):  
Lauren Boteler ◽  
Alexandra Rodriguez ◽  
Miguel Hinojosa ◽  
Damian Urciuoli
Keyword(s):  
Silicon Carbide ◽  
High Voltage ◽  
Recovery Time ◽  
Load Test ◽  
Avalanche Breakdown ◽  
Electric Force ◽  
Inductive Load ◽  
Turn On ◽  
Series Configuration ◽  
Reverse Recovery Time

The Army is moving to a more electric force with a number of high-voltage applications. To support this transition, there have been efforts to develop high voltage (15–30 kV) single-die 4H-silicon carbide (SiC) bipolar switches and diodes. However, packaging these high-voltage devices has proven to be challenging since standard packaging methods cannot withstand the high voltages in a compact form. Therefore, this work aims to develop a compact prototype package with improved size, weight, and power density by stacking diodes. The stacked diode approach allows elimination of almost half of the wirebonds, reduces the board size by 45%, and reduces the package inductance. A module has been designed, fabricated, and tested which is the first 30 kV module reported in the literature to stack two high-voltage diodes in a series configuration. The package has a number of features specific to high-voltage packaging including (1) two fins that extend the perimeter of the package to mitigate shorting, and (2) all the leads were designed with rounded corners to minimize voltage crowding. Hi-pot tests were performed on the unpopulated package and showed the package can withstand 30 kV without breaking down. The completed package with the stacked diodes showed avalanche breakdown occurring at 29 kV. The complete package was then compared to an equivalent discrete diode module and showed a 10X reduction in size. During a clamped-inductive load test the stacked diodes showed lower parasitic capacitance, faster reverse recovery time, and lower turn on energy as compared to the discrete diode packages.

THE APPLICATION OF SOME STRUCTURAL AND TECHNOLOGICAL SOLUTIONS IN DEVELOPMENT OF SCHOTTKY DIODES WITH IMPROVED FUNCTIONAL CHARACTERISTICS

2015 ◽  
Vol 8 (1) ◽  
pp. 18-21
Author(s):  
Машков ◽  
P. Mashkov ◽  
Кастрюлев ◽  
A. Kastryulev ◽  
Харченко ◽  
...  
Keyword(s):  
Optimal Design ◽  
Ionizing Radiation ◽  
Schottky Barrier ◽  
Schottky Diode ◽  
Schottky Diodes ◽  
Functional Characteristics ◽  
Reverse Voltage ◽  
Semiconductor Interface ◽  
Forward Current ◽  
Resistance To Ionizing Radiation

The paper presents some of the design and technological solutions that helped to improve the performance of the Schottky diodes, as well as radically improve their resistance to ionizing radiation. To check the calculations made by the model samples were prepared with a Schottky barrier diode (maximum permissible density of the average forward current - 100 A / cm2, the maximum reverse voltage - 150 V). The studies determined the optimal design of the working part of a Schottky diode, advanced design of the peripheral field-optimized technology for creating the metal-semiconductor interface. During tests carried diodes obtained prototypes it was found that the functional characteristics, as well as resistance to ionizing radiation, were at or better stated requirements

Comparison of Current – Voltage Characteristics of N and P Type 6H-SiC Schottky Diodes

2000 ◽  
Vol 640 ◽  
Author(s):  
Q. Zhang ◽  
V. Madangarli ◽  
Y. Gao ◽  
T. S. Sudarshan
Keyword(s):  
Schottky Diode ◽  
Room Temperature ◽  
Voltage Drop ◽  
Schottky Diodes ◽  
Reverse Current ◽  
Turn On ◽  
Current Voltage ◽  
Forward Voltage Drop ◽  
P Type ◽  
State Resistance

ABSTRACTForward and reverse current – voltage (I–V) characteristics of N and P-type Schottky diodes on 6H-SiC are compared in a temperature range of room temperature to 550K. While the room temperature I–V characteristics of the N-type Schottky diode after turn-on is more or less linear up to ∼ 100 A/cm2, the I–V characteristics of the P-type Schottky diode shows a non-linear behavior even after turn-on, indicating a variation in the on-state resistance with increase in forward current. For the first time it is shown that at high current densities (> 210 A/cm2) the forward voltage drop across P type Schottky diodes is lower than that across N type Schottky diodes on 6H-SiC. High temperature measurements indicate that while the on-state resistance of N type Schottky diodes increases with increase in temperature, the on-state resistance of P type Schottky diodes decreases with increase in temperature until a certain temperature. While the N-type diodes seem to have soft breakdown characteristics, the P-type diodes exhibit more or less abrupt breakdown characteristics.

Fabrication and device characteristics of bulk GaN-based Schottky diodes

2005 ◽  
Vol 892 ◽  
Author(s):  
Yi Zhou ◽  
Dake Wang ◽  
Claude Ahyi ◽  
Chin-Che Tin ◽  
John Williams ◽  
...  
Keyword(s):  
Breakdown Voltage ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Back Side ◽  
Free Standing ◽  
Edge Termination ◽  
Bulk Gan ◽  
State Resistance ◽  
Device Size ◽  
Reverse Recovery Time

AbstractIn this investigation, Schottky diodes with different device sizes (150μm, 420μm and 700μm) were fabricated on the Ga-face of a free-standing n--GaN wafer produced by Kyma Technologies, Inc. Full area back side ohmic contact was prepared on the N-face of the bulk GaN using Ti/Al. Without any edge-termination scheme, a relatively high reverse breakdown voltage of 240V was achieved. The reverse breakdown voltage decreases as the device size increases. The forward turn-on voltage was as low as 2.4V at room temperature for the 150μm diameter Schottky diodes. The best on-state resistance was 7.56 mΩcm2 for diodes with VB=240V, producing a figure-of-merit (VB2/RON) of 7.6 MWcm-2. The Schottky diode also showed an extremely short reverse recovery time (< 20 ns) switching from forward bias to reverse bias.

Experimental Studies of New GaAs Metal/Insulator/p-n+Switches Using Low Temperature Oxide

2002 ◽  
Vol 25 (3) ◽  
pp. 233-237
Author(s):  
K. F. Yarn
Keyword(s):  
Low Temperature ◽  
Negative Differential Resistance ◽  
Doping Concentration ◽  
Experimental Studies ◽  
Differential Resistance ◽  
Switching Behavior ◽  
Metal Insulator ◽  
Turn On ◽  
Temperature Oxide ◽  
Phase Chemical

First observation of switching behavior is reported in GaAs metal-insulator-p-n+structure, where the thin insulator is grown at low temperature by a liquid phase chemical-enhanced oxide (LPECO) with a thickness of 100 Å. A significant S-shaped negative differential resistance (NDR) is shown to occur that originates from the regenerative feedback in a tunnel metal/insulator/semiconductor (MIS) interface andp-n+junction. The influence of epitaxial doping concentration on the switching and holding voltages is investigated. The switching voltages are found to be decreased when increasing the epitaxial doping concentration, while the holding voltages are almost kept constant. A high turn-off/turn-on resistance ratio up to105has been obtained.

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