Epitaxial-like growth of solution-processed PbZr0.4Ti0.6O3 thin film on single-crystal Nb-doped SrTiO3 substrate

2017 ◽  
Vol 33 (4) ◽  
Author(s):  
TRINH BUI
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Annealing Temperature ◽  
Bottom Electrode ◽  
Solution Process ◽  
Silicon Substrates ◽  
Homogeneous Surface ◽  
Pzt Thin Films ◽  
Niobium Doped ◽  
Pzt Films

PbZr0.4Ti0.6O3 (PZT) thin films have been conventionally fabricated on traditional silicon substrates with a platinum bottom electrode; however, as a consequence of unit cell mismatch, the films are difficult to form as an epitaxial-like growth. Hence, PZT films deposited on single-crystal niobium doped SrTiO3(111) substrates (Nb:STO) are promising to solve this issue thanks to the similar perovskite structure between PZT and STO. Essentially, Nb:STO material is a conductor, playing a part in both bottom electrode and epitaxial substrate. In this work, 200-nm-thick PZT films were successfully fabricated on Nb:STO substrates by a solution process. One obtained that PZT(111) peak started to appear on the Nb:STO substrate at a low annealing temperature of 450oC. Also, scanning electron microscopy observation shows smooth and homogeneous surface of PZT films on Nb:STO substrate with no grain boundary, which evidences for epitaxial-like growth of PZT thin films. Remnant polarization of 6 µC/cm2 and leakage current of 8×10-8 A were obtained at applied voltage of 5 V.

PZT Thin Films Deposited by RF Magnetron Sputtering

2013 ◽  
Vol 302 ◽  
pp. 8-13
Author(s):  
Shun Fa Hwang ◽  
Wen Bin Li
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Annealing Temperature ◽  
Bottom Electrode ◽  
Rf Sputtering ◽  
Rf Magnetron Sputtering ◽  
Pzt Thin Films ◽  
Pzt Film ◽  
Pzt Thin Film

PZT thin film was fabricated by using RF-sputtering process, and platinum was used as bottom electrodes. The sputtering gases were Ar：O2＝25：0 sccm, Ar：O2＝20：5 sccm, or Ar：O2＝15：10 sccm. After sputtering, the PZT film was annealed for 5 minutes under O2 gas environment and at the temperature of 600 0C, 650 0C, 700 0C or 750 0C. To judge the quality of the deposited PZT film, its physical properties and electric properties were evaluated. The results indicate that the best crystallization temperature of PZT thin film is about 700 0C. Also, the roughness of the PZT thin film becomes larger with the increasing of annealing temperature. By adding more oxygen in the sputtering gas, one could have better crystallization of the PZT film. As for the electrical properties, the leakage current of PZT thin film increases with the increasing of annealing temperature. Furthermore, the ferroelectric property is affected by the crystallization amount of perovskite, the thickness of PZT thin film, and the diffusion situation between the bottom electrode and the PZT film.

Ferroelectric Thin Films by sol-gel Processing

1989 ◽  
Vol 152 ◽  
Author(s):  
S. L. Swartz ◽  
P. J. Melling ◽  
C. S. Grant
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Sol Gel ◽  
Fused Silica ◽  
Ferroelectric Materials ◽  
Ferroelectric Thin Films ◽  
Silicon Substrates ◽  
Heat Treated ◽  
Pzt Films ◽  
Gel Processing

ABSTRACTThe sol-gel processing of ferroelectric thin films is being investigated at Battelle. The ferroelectric materials included in this study are PbTiO3, Pb(Zr, Ti)O3 (PZT), and KNbO3. The sol-gel processing and crystallization of these films on fused silica, silicon, alumina, and single crystal SrTiO3 substrates is described.Sol-gel derived PbTiO3 thin films crystallized into the expected tetragonal perovskite structure when heated to 500 C and above. However, the crystallization of sol-gel PZT (20/80) thin films was found to be substratedependent. The heat-treated PZT films were amorphous when deposited on silica and silicon substrates. Crystalline perovskite PZT films were produced on alumina substrates, and epitaxial PZT films were produced on single-crystal SrTiO3. Heat treatment of sol-gel KNbO3 films on silicon and alumina substrates resulted in the crystallization of a variety of non-perovskite phases, but epitaxial growth of KNbO3 was observed on single crystal SrTiO3.

High Temperature Dielectric Properties of Sol-Gel Derived Thick PZT thin Films with Different Zr/Ti Atom Ratios

2001 ◽  
Vol 688 ◽  
Author(s):  
Jinrong Cheng ◽  
Wenyi Zhu ◽  
Nan Li ◽  
L.Eric Cross
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Remnant Polarization ◽  
Elevated Temperatures ◽  
Sol Gel ◽  
Xrd Analysis ◽  
Dielectric Constants ◽  
Silicon Substrates ◽  
Pzt Thin Films ◽  
Pzt Films

AbstractPZT thin films of different thicknesses and Zr/Ti ratios of 60/40, 52/48 and 45/55 were coated onto platinized silicon substrates by using 2 methoxyethanol (2-MOE) based sol-gel spinon technique and crystallized with a rapid thermal annealing (RTA) process. XRD analysis revealed that thin PZT films exhibit random texture, while the thicker ones exhibit (100) texture, which was independent of composition. Dielectric constants and dissipation factors of PZT thin films were measured at elevated temperatures and as a function of frequency. For films with a thickness of ∼ 4 μm, the Curie points are at 350, 375 and 422°C for Zr/Ti ratios of 60/40, 52/48 and 45/55, respectively. All these films exhibit a high remnant polarization. A remnant polarization of 35 μC/cm2 had been achieved for the 60/40 films. No enhancement of the dielectric constant was observed in films with a composition close to MPB. The higher dielectric constant observed in films with the highest Zr content was explained by the concept of domain engineering.

The effect of RuO2/Pt hybrid bottom electrode structure on the leakage and fatigue properties of chemical solution derived Pb(ZrxTi1−x)O3 thin films

1999 ◽  
Vol 14 (3) ◽  
pp. 1018-1025 ◽  
Author(s):  
Seung-Hyun Kim ◽  
J. G. Hong ◽  
S. K. Streiffer ◽  
Angus I. Kingon
Keyword(s):  
Thin Films ◽  
Applied Voltage ◽  
Remanent Polarization ◽  
Bottom Electrode ◽  
Fatigue Properties ◽  
Chemical Solution ◽  
Electrode Structure ◽  
Pzt Thin Films ◽  
Pzt Films ◽  
Ti Content

We have investigated the effect of RuO2 (10, 30, 50 nm)/Pt layered hybrid bottom electrode structure and film composition on the leakage and fatigue properties of chemical solution derived Pb(ZrxTi1−x)O3 (PZT) thin films. It was observed that the use of high Ti content (Zr: Ti = 30: 70) films with control of excess PbO at the thin RuO2 (10 nm)/Pt bottom electrode surface reduced leakage current and showed good fatigue properties with high remanent polarization compared to the use of high Zr films (Zr: Ti = 50: 50) or thicker RuO2 (30, 50 nm)/Pt bottom electrodes. Typical P-E hysteresis behavior of PZT films was observed even at an applied voltage of 3 V, demonstrating greatly improved remanence and coercivity. Fatigue and breakdown characteristics of these modified PZT thin films (Zr: Ti = 30: 70) on RuO2 (10 nm)/Pt, measured at 5 V, showed stable behavior, and less than 15% fatigue degradation was observed up to 1010 cycles.

Microstructural Rearrangement in PZT(52/48) Thin Film Prepared By Reactive Cosputtering on Pt on Si(100)

1992 ◽  
Vol 280 ◽  
Author(s):  
Woong Kil Choo ◽  
Kwang Young Kim ◽  
Hyo Jin Kim ◽  
Sung Tae Kim
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Film Thickness ◽  
Annealing Time ◽  
Annealing Temperature ◽  
Experimental Conditions ◽  
Pzt Thin Films ◽  
Pzt Films ◽  
Cubic Structure

ABSTRACTThe experimental conditions which render the exact stoichiometry of PZT(52/48) thin films deposited on Pt thin film on Si(100) by reactive cosputtering have been investigated. As-deposited PZT is amorphous containing α-PbO2 microcrystallites. As annealing temperature increases, the amorphous PZT films crystallize into pyrochlore and perovskite with pseudo-cubic structure in sequence. The perovskite PZT annealed above 750 °C evolves into a phase of morphotropic phase boundary. In the perovskite PZT thin films, the leakage current increases with annealing time. Also, the dielectric constant increases with film thickness and annealing temperature, which is discussed in conjunction with PZT/Pt interfacial morphology.

The Effect of RuO2/Pt Hybrid Bottom Electrode Structure on The Microstructure and Ferroelectric Properties of Sol-Gel Derived PZT Thin Films

1997 ◽  
Vol 493 ◽  
Author(s):  
Seung-Hyun Kim ◽  
J. G. Hong ◽  
J. C. Gunter ◽  
H. Y. Lee ◽  
S. K. Streiffer ◽  
...  
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Bottom Electrode ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Chemical Solution ◽  
Electrode Structure ◽  
Solution Deposition ◽  
Pzt Thin Films ◽  
Chemical Solution Deposition Method

ABSTRACTFerroelectric PZT thin films on thin RuO2 (10, 30, 50nm)/Pt hybrid bottom electrodes were successfully prepared by using a modified chemical solution deposition method. It was observed that the use of a lOnm RuO2Pt bottom electrode reduced leakage current, and gave more reliable capacitors with good microstructure compare to the use of thicker RuO2/Pt bottom electrodes. Typical P-E hysteresis behavior was observed even at an applied voltage of 3V, demonstrating greatly improved remanence and coercivity. Fatigue and breakdown characteristics, measured at 5V, showed stable behavior, and only below 13-15% degradation was observed up to 1010 cycles. Thicker RuO2 layers resulted in high leakage current density due to conducting lead ruthenate or PZT pyrochlore-ruthenate and a rosette-type microstructure.

Effect of Precursor Sol Ageing on Sol-Gel Derived Ruthenium Oxide Thin Films

1999 ◽  
Vol 606 ◽  
Author(s):  
S. Bhaskar ◽  
S. B. Majumder ◽  
P. S. Dobal ◽  
R. S. Katiyar ◽  
A. L. M. Cruz ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Sol Gel ◽  
Ruthenium Oxide ◽  
Precursor Solution ◽  
Silicon Substrates ◽  
Solution Deposition ◽  
Precursor Material ◽  
Afm Analysis

AbstractIn the present work we have optimized the process parameters to yield homogeneous, smooth ruthenium oxide (RuO2) thin films on silicon substrates by a solution deposition technique using RuCl3.×.H2O as the precursor material. Films were annealed in a temperature range of 300°C to 700°C, and it was found that RuO2 crystallizes at a temperature as low as 400°C. The crystallinity of the films improves with increased annealing temperature and the resistivity decreases from 4.86µΩ-m (films annealed at 400°C) to 2.94pµΩ (films annealed at 700°C). Ageing of the precursor solution has a pronounced effect on the measured resistivities of RuO2 thin films. It was found that the measured room temperature resistivities increases from 2.94µΩ-m to 45.7µΩ-m when the precursor sol is aged for aged 60 days. AFM analysis on the aged films shows that the grain size and the surface roughness of the annealed films increase with the ageing of the precursor solution. From XPS analysis we have detected the presence of non-transformed RuCl3 in case of films prepared from aged solution. We propose, that solution ageing inhibits the transformation of RuCl3 to RuO2 during the annealing of the films. The deterioration of the conductivity with solution ageing is thought to be related with the chloride contamination in the annealed films.

Domain structures of epitaxial PT, PLT and PZT thin films on MgO(001) single crystal substrates

1997 ◽  
Vol 196 (1) ◽  
pp. 5-8 ◽  
Author(s):  
Young Min Kang ◽  
Kyeong Seok Lee ◽  
Sunggi Baik
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Pzt Thin Films ◽  
Domain Structures

Effects of Sputtered Ir and IrO2 Electrodes on the Properties of PZT Thin Films Deposited By MOCVD

1997 ◽  
Vol 493 ◽  
Author(s):  
M. Shimizu ◽  
H. Fujisawa ◽  
S. Hyodo ◽  
S. Nakashima ◽  
H. Niu ◽  
...  
Keyword(s):  
Bottom Electrode ◽  
Secondary Ion Mass Spectrometry ◽  
Rf Magnetron Sputtering ◽  
Electrode Thickness ◽  
Pzt Thin Films ◽  
Transmission Electron ◽  
Pzt Films ◽  
Sims Analysis ◽  
Secondary Ion ◽  
Strong Diffusion

ABSTRACTThe effect of bottom electrode thickness on the electrical properties of PZT capacitors with Ir and IrO2, electrodes was investigated, with particular attention to switching endurance characteristics. Ir and IrO2 electrodes were prepared by rf magnetron sputtering. PZT films were grown by MOCVD. Secondary ion mass spectrometry (SIMS) analysis showed thick Ir and IrO2 electrodes performed well as a barrier to the PZT elements. On the other hand, strong diffusion at the interface between PZT and the electrodes was observed, when the Ir and IrO2 electrodes were thin. From transmission electron microscope (TEM) observation, it was also found that there was an amorphous intermediate layer at the interface between the PZT and the thick Ir bottom electrode. The switching endurance characteristics were influenced by the thickness of the Ir bottom electrode.

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