Microstructural Rearrangement in PZT(52/48) Thin Film Prepared By Reactive Cosputtering on Pt on Si(100)

1992 ◽  
Vol 280 ◽  
Author(s):  
Woong Kil Choo ◽  
Kwang Young Kim ◽  
Hyo Jin Kim ◽  
Sung Tae Kim
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Film Thickness ◽  
Annealing Time ◽  
Annealing Temperature ◽  
Experimental Conditions ◽  
Pzt Thin Films ◽  
Pzt Films ◽  
Cubic Structure

ABSTRACTThe experimental conditions which render the exact stoichiometry of PZT(52/48) thin films deposited on Pt thin film on Si(100) by reactive cosputtering have been investigated. As-deposited PZT is amorphous containing α-PbO2 microcrystallites. As annealing temperature increases, the amorphous PZT films crystallize into pyrochlore and perovskite with pseudo-cubic structure in sequence. The perovskite PZT annealed above 750 °C evolves into a phase of morphotropic phase boundary. In the perovskite PZT thin films, the leakage current increases with annealing time. Also, the dielectric constant increases with film thickness and annealing temperature, which is discussed in conjunction with PZT/Pt interfacial morphology.

Characterization of MgZnO Thin Film for 1 GHz MMIC Applications

2013 ◽  
Vol 832 ◽  
pp. 310-315
Author(s):  
R. Ahmad ◽  
M.S. Shamsudin ◽  
M. Salina ◽  
S.M. Sanip ◽  
M. Rusop ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Loss Tangent ◽  
Integrated Circuit ◽  
Annealing Temperature ◽  
Dielectric Material ◽  
Sol Gel ◽  
Size Reduction ◽  
High Frequencies

MgZnO thin films are proposed as a new dielectric material for 1 GHz monolithic microwave integrated circuit (MMIC) applications. The high permittivity of this material enables size reduction; furthermore this can be fabricated using a low cost processing method. In this work, MgZnO/Pt/Si thin films were synthesized using a sol-gel spin coating method. The samples were annealed at various temperatures with the effects on physical and electrical properties investigated at direct current (DC) and high frequencies. The physical properties of MgZnO thin film were analyzed using X-Ray diffraction, with the improvements shown in crystalline structure and grain size with increasing temperature up to 700 °C. DC resistivity of 77 Ωcm at higher annealing temperature obtained using a four point probe station. In order to prove the feasibility at high frequencies, a test structure consisting of a 50 Ω transmission line and capacitors with 50 × 50 μm electrode area were patterned on the films using electron beam lithography. The radio frequency (RF) properties were measured using aWiltron 37269Avector network analyzer andCascade Microtechon-wafer probes measured over a frequency range of 0.5 to 3 GHz. The dielectric constant, loss tangent and return loss, S11improve with the increment annealing temperature. The dielectric constant was found to be 18.8, with loss tangent of 0.02 at 1 GHz. These give a corresponding size reduction of ten times compared to conventional dielectrics, silicon nitride (Si3N4). These indicate that the material is suitable to be implemented as a new dielectric material for 1GHz MMIC applications.

PZT Thin Films Deposited by RF Magnetron Sputtering

2013 ◽  
Vol 302 ◽  
pp. 8-13
Author(s):  
Shun Fa Hwang ◽  
Wen Bin Li
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Annealing Temperature ◽  
Bottom Electrode ◽  
Rf Sputtering ◽  
Rf Magnetron Sputtering ◽  
Pzt Thin Films ◽  
Pzt Film ◽  
Pzt Thin Film

PZT thin film was fabricated by using RF-sputtering process, and platinum was used as bottom electrodes. The sputtering gases were Ar：O2＝25：0 sccm, Ar：O2＝20：5 sccm, or Ar：O2＝15：10 sccm. After sputtering, the PZT film was annealed for 5 minutes under O2 gas environment and at the temperature of 600 0C, 650 0C, 700 0C or 750 0C. To judge the quality of the deposited PZT film, its physical properties and electric properties were evaluated. The results indicate that the best crystallization temperature of PZT thin film is about 700 0C. Also, the roughness of the PZT thin film becomes larger with the increasing of annealing temperature. By adding more oxygen in the sputtering gas, one could have better crystallization of the PZT film. As for the electrical properties, the leakage current of PZT thin film increases with the increasing of annealing temperature. Furthermore, the ferroelectric property is affected by the crystallization amount of perovskite, the thickness of PZT thin film, and the diffusion situation between the bottom electrode and the PZT film.

Structural Properties of PbI2 Thin Film

2014 ◽  
Vol 879 ◽  
pp. 175-179 ◽  
Author(s):  
Safaa I. Mohammed ◽  
Naser Mahmoud Ahmed ◽  
Y. Al-Douri ◽  
U. Hashim
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Structural Analysis ◽  
Film Thickness ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Thermal Evaporation ◽  
Lead Iodide ◽  
Thermal Evaporation Method ◽  
Growth Orientation

Lead iodide (PbI2) thin films were successfully prepared by thermal evaporation method on a glass substrate at room temperature. The structural analysis of these films was done by XRD. The results revealed that the crystallite size increases when increasing the film thickness and annealing temperature. In addition, the preferred growth orientation was 001 for all the samples.

Enhanced the Dielectric and Tunable Properties of BZNT Thin Films through Adjusting Annealing Process

2012 ◽  
Vol 252 ◽  
pp. 211-215
Author(s):  
Xiao Hua Sun ◽  
Shuang Hou ◽  
Zhi Meng Luo ◽  
Cai Hua Huang ◽  
Zong Zhi Hu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Constant ◽  
Grain Size ◽  
Dielectric Loss ◽  
Annealing Temperature ◽  
Rf Magnetron Sputtering ◽  
Annealing Process ◽  
Si Substrates ◽  
Tunable Properties

Bismuth zinc niobate titanium (Bi1.5Zn0.5 Nb0.5Ti1.5O7) (BZNT) thin films were deposited on PtTiSiO2Si substrates by radio frequency (rf) magnetron sputtering. The microstructure, surface morphology, stress, dielectric and tunable properties of thin films were investigated as a function of initial annealing temperature. It’s found that high initial annealing temperature increases the grain size, dielectric constant and tunability of BZNT films simultaneously and decreases the tensile stress in films. The BZNT thin film annealed from 500 °C to 700 °C shows the highest FOM value of 45.67 with the smallest dielectric loss and upper tunability.

Effects of Annealing Treatment on WO3 Thin Films Prepared by DC Reactive Magnetron Sputtering

2014 ◽  
Vol 979 ◽  
pp. 248-250 ◽  
Author(s):  
Thanat Srichaiyaperk ◽  
Kamon Aiempanakit ◽  
Mati Horprathum ◽  
Pitak Eiamchai ◽  
Chanunthorn Chananonnawathorn ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Optical Properties ◽  
Magnetron Sputtering ◽  
Film Thickness ◽  
Annealing Temperature ◽  
Annealing Treatment ◽  
Reactive Magnetron ◽  
Thin Film Thickness ◽  
Dc Reactive Magnetron Sputtering

Tungsten trioxide (WO3) thin films were prepared by a DC reactive magnetron sputtering technique. The thin film fabrication process used tungsten (99.995%) as the sputtering target, the mixture of argon and oxygen as sputtering and reactive gases, and silicon (100) and glass slides as the substrates. The effects of annealing temperature in the range of 200-400°C on physical and optical properties of the WO3 thin films were investigated. The nanostructures and morphologies of these films were characterized by grazing-incident X-ray diffraction (GIXRD) and field-emission scanning electron microscopy (FE-SEM). The optical properties were analyzed by variable-angle spectroscopic ellipsometry (VASE) and spectrophotometer. From the XRD results, the as-deposited and annealed WO3 thin films up to 300°C were all amorphous. Only the WO3 thin film annealed at 400°C exhibited a polycrystalline monoclinic phase. The FE-SEM cross-sections and surface topologies demonstrated nearly identical thin-film thickness and physical grain sizes. The SE analyses showed that the thin films were all homogeneous dense layers with additional surface roughness. With the annealing treatment, the thin film thickness was slightly decreased. The SE physical model was best optimized with the Cauchy optical model. The results showed that the refractive index at 550 nm was increased from 2.17 to 2.23 with the increased annealing temperature. The results from the spectrophotometer confirmed that the optical spectra for the WO3 thin films were decreased. This study demonstrated that, the thin film annealed at 400°C exhibited the slightly lower transparency, which corresponded to the results from the GIXRD and SE analyses.

Epitaxial-like growth of solution-processed PbZr0.4Ti0.6O3 thin film on single-crystal Nb-doped SrTiO3 substrate

2017 ◽  
Vol 33 (4) ◽  
Author(s):  
TRINH BUI
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Annealing Temperature ◽  
Bottom Electrode ◽  
Solution Process ◽  
Silicon Substrates ◽  
Homogeneous Surface ◽  
Pzt Thin Films ◽  
Niobium Doped ◽  
Pzt Films

PbZr0.4Ti0.6O3 (PZT) thin films have been conventionally fabricated on traditional silicon substrates with a platinum bottom electrode; however, as a consequence of unit cell mismatch, the films are difficult to form as an epitaxial-like growth. Hence, PZT films deposited on single-crystal niobium doped SrTiO3(111) substrates (Nb:STO) are promising to solve this issue thanks to the similar perovskite structure between PZT and STO. Essentially, Nb:STO material is a conductor, playing a part in both bottom electrode and epitaxial substrate. In this work, 200-nm-thick PZT films were successfully fabricated on Nb:STO substrates by a solution process. One obtained that PZT(111) peak started to appear on the Nb:STO substrate at a low annealing temperature of 450oC. Also, scanning electron microscopy observation shows smooth and homogeneous surface of PZT films on Nb:STO substrate with no grain boundary, which evidences for epitaxial-like growth of PZT thin films. Remnant polarization of 6 µC/cm2 and leakage current of 8×10-8 A were obtained at applied voltage of 5 V.

Physicochemical and Electrical Properties of RF Magnetron Sputtered Lead Zirconate Titanate Thin Films

1994 ◽  
Vol 361 ◽  
Author(s):  
B. Ea Kim ◽  
M.C. Hugon ◽  
F. Varniere ◽  
B. Agius ◽  
H. Achard ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Lead Zirconate Titanate ◽  
Deuteron Beam ◽  
Lead Zirconate ◽  
Nuclear Reaction Analysis ◽  
Nominal Composition ◽  
Pzt Thin Films ◽  
Zirconate Titanate ◽  
Pzt Films

ABSTRACTDue to their high dielectric constant, good chemical stability and good insulating properties, lead zirconate titanate (PZT) thin films are considered as promising materials to replace Si3N4 and Ta2O5 for use as the capacitor dielectric in future high density DRAMs. Moreover, the ferroelectric quality of PZT films also allows use of this material in non volatile memories. In this paper, we investigate the properties of PZT films deposited from an oxide target of nominal composition {Pb1.1(Zr0.55,Ti0.45)O3} in a radio frequency (rf) magnetron sputtering system. The Pt(deposited at 450°C)/[TiN/Ti/BPSG/Si] structure annealed at 450°C at 10−6 mbar (Pt(450°C)/{TiN/Ti/BPSG/Si}450°c,10–6mbar) was used as a substrate material in this work. The PZT films were deposited at different pressures, and different substrate temperatures ranging from floating temperature to 400°C; the thicknesses of the sputtered films were in the 15–720 nm range. The kinetics of the sputtering process and the effect of sputtering parameters on film composition have been studied and related to the continuously monitored optical emission of the plasma. The relative cation and oxygen compositions of the films were determined by a new method based on the simultaneous use of Rutherford Backscattering Spectrometry (RBS) and Nuclear Reaction Analysis (NRA) induced by a deuteron beam. The conditions for the deposition of stoichiometric PZT thin films were established.Electrical characterizations of the PZT films including resistivity, dielectric constant, dissipation factor were studied as a function of the temperature. From initial electrical measurements, it appears that a dielectric constant of 740 can be obtained for PZT 55/45 films deposited on a previously annealed Pt/TiN/Ti/BPSG/Si structure.

High Temperature Dielectric Properties of Sol-Gel Derived Thick PZT thin Films with Different Zr/Ti Atom Ratios

2001 ◽  
Vol 688 ◽  
Author(s):  
Jinrong Cheng ◽  
Wenyi Zhu ◽  
Nan Li ◽  
L.Eric Cross
Keyword(s):  
Thin Films ◽  
Dielectric Constant ◽  
Remnant Polarization ◽  
Elevated Temperatures ◽  
Sol Gel ◽  
Xrd Analysis ◽  
Dielectric Constants ◽  
Silicon Substrates ◽  
Pzt Thin Films ◽  
Pzt Films

AbstractPZT thin films of different thicknesses and Zr/Ti ratios of 60/40, 52/48 and 45/55 were coated onto platinized silicon substrates by using 2 methoxyethanol (2-MOE) based sol-gel spinon technique and crystallized with a rapid thermal annealing (RTA) process. XRD analysis revealed that thin PZT films exhibit random texture, while the thicker ones exhibit (100) texture, which was independent of composition. Dielectric constants and dissipation factors of PZT thin films were measured at elevated temperatures and as a function of frequency. For films with a thickness of ∼ 4 μm, the Curie points are at 350, 375 and 422°C for Zr/Ti ratios of 60/40, 52/48 and 45/55, respectively. All these films exhibit a high remnant polarization. A remnant polarization of 35 μC/cm2 had been achieved for the 60/40 films. No enhancement of the dielectric constant was observed in films with a composition close to MPB. The higher dielectric constant observed in films with the highest Zr content was explained by the concept of domain engineering.

scholarly journals Properties of RF-Sputtered PZT Thin Films with Ti/Pt Electrodes

2014 ◽  
Vol 2014 ◽  
pp. 1-5 ◽  
Author(s):  
Cui Yan ◽  
Yao Minglei ◽  
Zhang Qunying ◽  
Chen Xiaolong ◽  
Chu Jinkui ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Residual Stress ◽  
Annealing Temperature ◽  
X Ray Diffraction ◽  
Pzt Thin Films ◽  
X Ray ◽  
Grain Sizes ◽  
Pzt Thin Film ◽  
Average Residual

Effect of annealing temperature and thin film thickness on properties of Pb(Zr0.53Ti0.47)O3(PZT) thin film deposited via radiofrequency magnetron sputtering technique onto Pt/Ti/SiO2/Si substrate was investigated. Average grain sizes of the PZT thin film were measured by atomic force microscope; their preferred orientation was studied through X-ray diffraction analysis. Average residual stress in the thin film was estimated according to the optimized Stoney formula, and impedance spectroscopy characterization was performed via an intelligent LCR measuring instrument. Average grain sizes of PZT thin films were 60 nm~90 nm and their average roughness was less than 2 nm. According to X-ray diffraction analysis, 600°C is the optimal annealing temperature to obtain the PZT thin film with better crystallization. Average residual stress showed that thermal mismatch was the decisive factor of residual stress in Pt/Ti/SiO2/Si substrate; the residual stress in PZT thin film decreased as their thickness increased and increased with annealing temperature. The dielectric constant and loss angle tangent were extremely increased with the thickness of PZT thin films. The capacitance of the device can be adjusted according to the thickness of PZT thin films.

The Morphology in Film of Polystyrene-b-Polylactide after Temperature Annealing Process

2015 ◽  
Vol 1095 ◽  
pp. 647-650
Author(s):  
Ting Chen ◽  
Jia Nan Zhang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Separation ◽  
Block Copolymer ◽  
Annealing Time ◽  
Self Assembly ◽  
Annealing Temperature ◽  
Annealing Process ◽  
Temperature Gradients ◽  
Si Substrates

Polystyrene-b-Polylactide (PS-b-PLA) was dissolved in chlorobenzene, and the development of the micro-phase separation morphology in asymmetric PS-b-PLA thin films was investigated by AFM. The thin films were prepared by spinning casting at the speed of 6000 r/min for 60s on Si substrates. We get different morphologies of PS-b-PLA thin film by changing the annealing temperature from 150 °C to 170 °C. In addition, the annealing time influences the morphology of the film. When the annealing time increased from 2 hours to 15 hours and 30 hours, the morphology transformed from parallel to perpendicular to the substrate. By applying temperature gradients, we can control the morphology and orientation of the Block copolymer film self-assembly.

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