scholarly journals ELECTRON SPECTROSCOPIC CONTROL OF SURFACE CLEANING OF SILICON SUBTRATES

2020 ◽  
Author(s):  
Utkirjon Sharopov ◽  
Keyword(s):  
Silicon Surface ◽  
Surface Cleaning ◽  
Subsequent Annealing ◽  
Total Current ◽  
Positive Ions

The work investigates the processes of purification - etching of the silicon surface with positive ions of cesium and subsequent annealing by total current spectroscopy.

Silicon Surface Cleaning for Low Temperature Epitaxial Growth

1993 ◽  
Vol 315 ◽  
Author(s):  
John O. Borland ◽  
Carol Riggi ◽  
Faye Brocious
Keyword(s):  
Low Temperature ◽  
Epitaxial Growth ◽  
Silicon Surface ◽  
Surface Cleaning

Control of Isotropic and Anisotropic Etching and Surface Cleaning of Silicon and Silicon Dioxide in a Hydrogen Plasma

1992 ◽  
Vol 282 ◽  
Author(s):  
S. Veprek ◽  
Ch. Wang ◽  
G. Ratz
Keyword(s):  
Surface Roughness ◽  
Silicon Dioxide ◽  
Silicon Surface ◽  
Etch Rate ◽  
Hydrogen Plasma ◽  
Oxygen Removal ◽  
Surface Cleaning ◽  
Optimum Conditions ◽  
Degree Of Anisotropy ◽  
Oxygen Impurities

ABSTRACTWe present data on the temperature dependence of the etch rate of silicon and silicon dioxide in order to elucidate optimum conditions for the selective oxygen removal from the silicon surface. Both, the etching temperature and ion bombardment have a pronounced influence on the surface morphology. The conditions yielding a minimum surface roughness will be presented. A careful control of the oxygen impurities of the hydrogen plasma in the range between about 1–3 ppm and 60 ppm allow us to control the degree of anisotropy of etching of patterned silicon wafers.

Study on the effect of Silicon surface cleaning processes on Gate Oxide Integrity

1997 ◽  
Vol 477 ◽  
Author(s):  
A. Corradi ◽  
E. Borzoni ◽  
P. Godio ◽  
G. Borionetti
Keyword(s):  
Experimental Design ◽  
Silicon Wafer ◽  
Silicon Surface ◽  
Surface Preparation ◽  
Gate Oxide ◽  
Surface Cleaning ◽  
Wafer Surface ◽  
Quality Performance ◽  
Wafer Cleaning ◽  
Silicon Wafer Surface

ABSTRACTThe effect of different silicon wafer surface preparation in modulating gate oxide quality performance has been studied through an experimental design which examines key phases of wafer cleaning and polishing processes. An interpretation of the root causes of GOI degradation has been proposed and discussed.

Silicon Surface Cleaning after Spacer Dry Etching

2001 ◽  
Vol 76-77 ◽  
pp. 303-306 ◽  
Author(s):  
Denis Shamiryan ◽  
Mikhail R. Baklanov ◽  
Serge Vanhaelemeersch
Keyword(s):  
Silicon Surface ◽  
Dry Etching ◽  
Surface Cleaning

Silicon surface cleaning by low dose argon‐ion bombardment for low‐temperature (750 °C) epitaxial deposition. II. Epitaxial quality

1987 ◽  
Vol 62 (8) ◽  
pp. 3398-3404 ◽  
Author(s):  
L. M. Garverick ◽  
J. H. Comfort ◽  
T. R. Yew ◽  
R. Reif ◽  
F. A. Baiocchi ◽  
...  
Keyword(s):  
Low Temperature ◽  
Silicon Surface ◽  
Low Dose ◽  
Ion Bombardment ◽  
Surface Cleaning ◽  
Epitaxial Deposition ◽  
Argon Ion Bombardment ◽  
Argon Ion

Low Temperature Silicon Surface Cleaning by HF Etching/Ultraviolet Ozone Cleaning (HF/UVOC) Method (II)–in situUVOC

1989 ◽  
Vol 28 (Part 1, No. 12) ◽  
pp. 2425-2429 ◽  
Author(s):  
Tetsuya Kaneko ◽  
Maki Suemitsu ◽  
Nobuo Miyamoto
Keyword(s):  
Low Temperature ◽  
Silicon Surface ◽  
Surface Cleaning
Sign in / Sign up

Export Citation Format

Share Document