IMPROVING RESERVOIR TESTING AND SAMPLING IN H2S CONTAMINATED FLUIDS BY ADAPTING STATE-OF-THE-ART SEMICONDUCTOR THIN FILM TECHNOLOGY FOR DOWNHOLE TESTER TOOLS

2021 ◽  
Author(s):  
Jimmy Price ◽  
◽  
Darren Gascooke ◽  
Anthony Van Zuilekom ◽  
Christopher Jones ◽  
...  

Accurate reservoir fluid identification and sampling of hydrogen sulfide (H2S) contaminated fluids is difficult to achieve due its consumption by the interior of downhole tool surfaces prior to sampling or measurement. For low PPM level concentrations, this fact does not change, despite recent tool advances utilizing NACE compliant materials. Consequently, H2S concentrations are typically under-reported which adversely affects production and presents significant health safety and environment concerns. Historically, only sampling bottles have been coated to preserve H2S concentrations during transit to laboratories with a material that is resistant to H2S reactivity to enable more representative measurements. However, only very recent efforts have transitioned the focus toward successfully coating the interior of the tools. This paper details a state-of-the-art technology, initially developed and heavily leveraged from the semiconductor industry. The technology is adapted to coat the interior surfaces of downhole tools with a chemically resistant dielectric thin film. New developments now provide the benefit of the process being safe, able to be performed at atmospheric pressure and temperature conditions, and portable; thus, allowing the coating process to be deployed to field locations. The method involves atomic layer deposition (ALD) technology to be plumbed in directly to a downhole tool and conformally deposit a thin layer (e.g. < 1 micron) of highly durable H2S-resistant sapphire to the entire interior tool surface. An automated procedure has been developed allowing the versatility to accommodate a number of unique geometries inherent of different formation tester configurations. New advances in Quartz Crystal Microbalance sensors are also realized in-situ to optimize (in real-time) the efficiency of the process and ensure uniform and conformal coverage is obtained in the fastest and safest manner. Laboratory testing on a prototype system demonstrated uniform and conformal coverage of a ~ 500 nm thick sapphire film resistant to flaking and scratching. Accelerated lifetime stress testing demonstrated high durability relative to expected tool life. Testing of coated and uncoated tools show the coating is successful at the 50ppm level H2S for up to 4 days. These results are contrasted with similar tool body samples not coated with the H2S-resistant ALD sapphire and subject to the same H2S conditions. To show the coating’s durability, subsequent experiments flowed mud-based drilling fluid through both the tool body and sample chambers, followed by thorough cleaning and successful repeating the same 50ppm H2S test. Exposure of the sapphire coated tool body and sample chambers to various concentrations of H2S demonstrated zero loss. Ultimately this technique represents a new opportunity to gather representative formation samples containing low concentrations of H2S.

2014 ◽  
Vol 605 ◽  
pp. 71-74 ◽  
Author(s):  
V.A.T. Dam ◽  
M.A. Blauw ◽  
S.H. Brongersma ◽  
R. van Schaijk

A metal-insulator-semiconductor (MIS) capacitor with La2O3 dielectric is proposedin this work as a sensor for measuring CO2 in air. In this device, a 10 nm thick La2O3 dielectriclayer, which serves as a CO2 sensitive material, was atomic-layer-deposited (ALD) on p-typesilicon. Change in the at band voltage (VFB) of the MIS capacitor due to the reactionbetween CO2 and oxide layer and its interfaces, is used as the gas sensitive parameter of thesensor. The deposition temperature for the La2O3 layer has been optimized for maximizingCO2 sensitivity. The process ow including post annealing (rapid thermal annealing) has beenoptimized to allow further possibility to integrate the sensor with CMOS read-out circuitries. The sensor shows a sensitivity of 84 mV per decade to CO2 in air in a concentration rangefrom 300-5000 ppm at ambient temperature with a response time (t90) of 34 minutes.


Author(s):  
Vaibhav Gupta ◽  
Mark L. Adams ◽  
John A. Sellers ◽  
Noah Niedzwiecki ◽  
Nick Rush ◽  
...  

Author(s):  
Yoon Kyeung Lee ◽  
Chanyoung Yoo ◽  
Woohyun Kim ◽  
Jeongwoo Jeon ◽  
Cheol Seong Hwang

Atomic layer deposition (ALD) is a thin film growth technique that uses self-limiting, sequential reactions localized at the growing film surface. It guarantees exceptional conformality on high-aspect-ratio structures and controllability...


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