Extraction of the Parameters from I-V Data for Nonideal Photodetectors: A Comparative Study

2005 ◽  
Vol 494 ◽  
pp. 83-88
Author(s):  
A. Vasić ◽  
P. Osmokrović ◽  
B. Lončar ◽  
S. Stanković
Keyword(s):  
Comparative Study ◽  
Ideality Factor ◽  
Series Resistance ◽  
Semiconductor Devices ◽  
Saturation Current ◽  
Made In

Parameters that characterize semiconductor devices are often determined with difficulty, and their values very frequently depend on the method used for measurements and analysis. The extraction of diode parameters from the obtained I-V measurements could be complicated by their dependence on the voltage and the presence of series resistance. Therefore, an interpretation of the experimental I-V data must be very carefully made. In this paper, some methods for obtaining diode parameters such as saturation current, ideality factor and series resistance are presented. An evaluation of these methods based on their application for the extraction of the relevant parameters of photodiodes is also performed. Some of the methods that produce reliable and reproducible results are evaluated based on the experimentally obtained results, and in the view of the complexity of the used methods and their limitations.

scholarly journals The effects of electron irradiation and thermal dependence measurements on 4H-Sic Schottky diode

2017 ◽  
Vol 51 (12) ◽  
pp. 1721
Author(s):  
Sabuhi Ganiyev ◽  
M. Azim Khairi ◽  
D. Ahmad Fauzi ◽  
Yusof Abdullah ◽  
N.F. Hasbullah
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Elevated Temperatures ◽  
Series Resistance ◽  
Schottky Diodes ◽  
High Energy ◽  
Bias Current ◽  
N Saturation ◽  
Saturation Current ◽  
Current Voltage

In this paper the effects of high energy (3.0 MeV) electrons irradiation over a dose ranges from 6 to 15 MGy at elevated temperatures 298 to 448 K on the current-voltage characteristics of 4H-SiC Schottky diodes were investigated. The experiment results show that after irradiation with 3.0 MeV forward bias current of the tested diodes decreased, while reverse bias current increased. The degradation of ideality factor, n, saturation current, Is, and barrier height, Phib, were not noticeable after the irradiation. However, the series resistance, Rs, has increased significantly with increasing radiation dose. In addition, temperature dependence current-voltage measurements, were conducted for temperature in the range of 298 to 448 K. The Schottky barrier height, saturation current, and series resistance, are found to be temperature dependent, while ideality factor remained constant. DOI: 10.21883/FTP.2017.12.45193.8646

Temperature dependence of current-voltage characteristics in μc-Si:H and pm-Si:H PIN structures

2012 ◽  
Vol 1426 ◽  
pp. 365-370
Author(s):  
Francisco Temoltzi Avila ◽  
Andrey Kosarev ◽  
Ismael Cosme ◽  
Mario Moreno ◽  
P. Roca y Cabarrocas
Keyword(s):  
Temperature Dependence ◽  
Temperature Change ◽  
Ideality Factor ◽  
Dark Current ◽  
Series Resistance ◽  
Equivalent Circuit Model ◽  
Saturation Current ◽  
Current Voltage ◽  
Current Voltage Characteristics

ABSTRACTThe dark current-voltage characteristics of PIN structures are studied and analyzed for PV samples as for integral device without taking account the performance of the different elements typically used in equivalent circuit model such as diode n-factor, shunt and series resistances. The contribution of all these elements is very important in the development of devices because they determine the performance characteristics. In this work we have studied and compared the temperature dependence of current-voltage characteristics in μc-Si:H and pm-Si:H p-i-n structures having approximately the same efficiencies with emphasis on their different electronic characteristics such as shunt (Rsh) and series (Rs) resistance, ideality factor (n), and the saturation current (Is), which give us some ideas on role of these elements. In the pm-Si:H cell it was observed that the Rs increases with the increase of the temperature in contrast to the μc-Si:H structures, where the series resistance reduces with temperature change from T = 300 up to 480K. In both the pm-Si:H and μc-Si:H samples Rshreduces with temperature change from 300 up to 480 K. The ideality factor in the pm-Si:H structure shows an increase, and in μc-Si:H a reduction, when temperature increases. Saturation current in both cases increases with temperature as it was expected. From the saturation current it was obtained the build-in potential. Analysis behavior of both saturation current and n-factor with temperature shows that build-in potential increases with temperature in the pm-Si:H, but reduces in μc-Si:H structure.

Temperature Dependent Current-Voltage Characteristics of n-Type β-FeSi2/Intrinsic Si/p-Type Si Heterojunctions

2015 ◽  
Vol 1120-1121 ◽  
pp. 435-439
Author(s):  
Nathaporn Promros ◽  
Dalin Prajakkan ◽  
Nantharat Hongsa ◽  
Nattanee Suthayanan ◽  
Phongsaphak Sittimart ◽  
...  
Keyword(s):  
Current Density ◽  
Ideality Factor ◽  
Series Resistance ◽  
Linear Part ◽  
Thermionic Emission ◽  
Saturation Current ◽  
Current Voltage ◽  
Saturation Current Density ◽  
Current Voltage Characteristics ◽  
P Type

In this work, n-type β-FeSi2/intrinsic Si/p-type Si heterojunctions were prepared by facing-targets direct-current sputtering. We measured their current-voltage characteristics at low temperatures ranging from 300 K down to 50 K and investigated their ideality factor, saturation current and series resistance using thermionic emission theory and Cheung’s method. From thermionic emission theory, the ideality factor and saturation current density were calculated from the slope of the linear part from the forward lnJ-V and the straight line intercept of lnJ-V at zero voltage, respectively. When the temperature decreased from 300 K down to 50 K, the ideality factor increased from 1.12 to 11.13, whereas the saturation current density decreased from 2.09 × 10-6 A/cm2 to 1.06 × 10-9 A/cm2. Using Cheung’s method, we plotted the relations of dV/d(lnJ)-J and H(J)-J in order to estimate the series resistance from the slope of both plots. In addition, we estimated the ideality factor from a y-axis intercept of the dV/d(lnJ)-J plot. The series resistances from both plots were consistent with each other and increased with the decreasing temperature. The ideality factor estimated by Cheung’s method was in agreement with that obtained from estimation by thermionic emission theory.

Ion Beam Mixing of Sb Schottky Contacts on n-Si

1989 ◽  
Vol 157 ◽  
Author(s):  
J. B. Malherbe ◽  
K. P. Weimer ◽  
L. J. Bredell ◽  
E. Friedland ◽  
G. Myburg
Keyword(s):  
Ideality Factor ◽  
Series Resistance ◽  
Ion Beam ◽  
Dose Dependence ◽  
Schottky Contacts ◽  
Interface Conditions ◽  
Saturation Current ◽  
Ion Beam Mixing

ABSTRACTThe I—V characteristics of as—deposited antimony Schottky contacts on silicon were extremely sensitive to interface conditions. This led to unpredictable results for the unimplanted contacts. After Si* implantation the contacts displayed more uniform I—V characteristics. Implantation led to higher values for the ideality constant, the series resistance and for the saturation current. The ideality factor seems to decrease at the higher implantation doses (ϕ ≥ 5×1014 Sb+cn−2), while no clear dose dependence patterns were observed for the saturation current and series resistance after implantation.

Realization and Characterization of CH3NH3PbI3 /c-Si Heterojunction

2021 ◽  
Vol 406 ◽  
pp. 364-374
Author(s):  
Fatima Khelfaoui ◽  
Itidel Belaidi ◽  
Nadhir Attaf ◽  
Mohammed Salah Aida ◽  
Jamal Bougdira
Keyword(s):  
Ideality Factor ◽  
Series Resistance ◽  
Crystalline Silicon ◽  
Interface State ◽  
Angular Frequency ◽  
Single Crystalline Silicon ◽  
Saturation Current ◽  
Si Substrate ◽  
Conductance Method

In the present work we have reported the realization and characterization of CH3NH3PbI3/c-Si heterojunction. It was achieved by deposing CH3NH3PbI3 perovskite film on (P) doped single crystalline Silicon (c-Si) substrate by spin coating. The structural, optical and electrical properties of perovskite film were investigated. The electric characterization of the realized device was achieved through I-V and G-f measurements. The recorded I-V characteristic exhibits a rectifier behavior. This curve was used also to determine diode parameters; the ideality factor, the saturation current, the series resistance and the potential barrier. However, the conductance method was used to assess the interface state Nss via (G/ω) versus angular frequency ω curve. The results were used to justify the large values of the ideality factor and the series resistance.

scholarly journals Silicon carbide schottky diodes forward and reverse current properties upon fast electron radiation

2019 ◽  
Vol 8 (2) ◽  
pp. 428-437
Author(s):  
M. Azim Khairi ◽  
Rosminazuin Ab. Rahim ◽  
Norazlina Saidin ◽  
Yusof Abdullah ◽  
Nurul Fadzlin Hasbullah
Keyword(s):  
Silicon Carbide ◽  
Electron Irradiation ◽  
Ideality Factor ◽  
Reverse Bias ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Bias Current ◽  
Saturation Current ◽  
Order Of Magnitude

This paper investigates on the reaction of 10 and 15MGy, 3MeV electron irradiation upon off-the-shelves (commercial) Silicon Carbide Schottky diodes from Infineon Technologies (model: IDH08SG60C) and STMicroelectronics (model: STPSC806). Such irradiation reduces the forward-bias current. The reduction is mainly due to the significant increase of the series resistance (i.e. Infineon: 1.45Ω at before irradiation → 121×103 Ω at 15MGy); STMicroelectronics: 1.44Ω at before irradiation → 2.1×109 Ω at 15MGy). This increase in series resistance gives 4.6 and 8.2 orders of magnitude reduction for the forward-bias current density of Infineon and STMicroelectronics respectively. It is also observed that the ideality factor and the saturation current of the diodes increases with increasing dose (i.e. ideality factor- Infineon: 1.01 at before irradiation → 1.05 at 15MGy; STMicroelectronics: 1.02 at before irradiation → 1.3 at 15MGy | saturation current- Infineon: 1.6×10-17A at before irradiation → 2.5×10-17A at 15MGy; STMicroelectronics: 2.4×10-15A at before irradiation → 8×10-15A at 15MGy). Reverse-bias leakage current density in model by Infineon increases by one order of magnitude after 15MGy irradiation, however, in model by STMicroelectronics decreases by one order of magnitude. Overall, for these particular samples studied, Infineon devices have shown to be better in quality and more radiation resistance toward electron irradiation in forward-bias operation while STMicroelectronics exhibit better characteristics in reverse-bias operation.

scholarly journals Simulations Based on Experimental Data of the Behaviour of a Monocrystalline Silicon Photovoltaic Module

2015 ◽  
Vol 2015 ◽  
pp. 1-9 ◽  
Author(s):  
Abraham Dandoussou ◽  
Martin Kamta ◽  
Laurent Bitjoka ◽  
Patrice Wira ◽  
Alexis Kuitché
Keyword(s):  
Experimental Data ◽  
Ideality Factor ◽  
Extraction Method ◽  
Series Resistance ◽  
Least Square Method ◽  
Monocrystalline Silicon ◽  
Least Square ◽  
Photovoltaic Module ◽  
Saturation Current ◽  
Reverse Saturation Current

The performance of monocrystalline silicon cells depends widely on the parameters like the series and shunt resistances, the diode reverse saturation current, and the ideality factor. Many authors consider these parameters as constant while others determine their values based on the I-V characteristic when the module is under illumination or in the dark. This paper presents a new method for extracting the series resistance, the diode reverse saturation current, and the ideality factor. The proposed extraction method using the least square method is based on the fitting of experimental data recorded in 2014 in Ngaoundere, Cameroon. The results show that the ideality factor can be considered as constant and equal to 1.2 for the monocrystalline silicon module. The diode reverse saturation current depends only on the temperature. And the series resistance decreases when the irradiance increases. The extracted values of these parameters contribute to the best modeling of a photovoltaic module which can help in the accurate extraction of the maximum power.

On white marble half-lotus meditation statues carved in Wuding Era of the Eastern Wei Dynasty

2019 ◽  
Vol 19 (1) ◽  
pp. 182-194
Author(s):  
Hyun-Sook So
Keyword(s):  
New York ◽  
Comparative Study ◽  
Metropolitan Museum ◽  
White Marble ◽  
City Area ◽  
Metropolitan Museum Of Art ◽  
Right Hand ◽  
Second Year ◽  
Made In ◽  
Wei Dynasty

Abstract In 2012, large amounts of white marble Buddhist statues of the Eastern Wei and Northern Qi Dynasties were unearthed from the Buddhist sculpture hoard at Bei Wuzhuang in Ye City Site. This paper makes a comparative study on a bodhisattva statue in meditation seated in half-lotus posture (resting right ankle on the knee of pendent left leg and holding right hand upward) among them and another sculpture of the same type and made in the same period unearthed at the Xiude Monastery site in Dingzhou; from the double-tree, stupa and coiling dragon designs shown by them, this paper explores the commonalities and differences of the Buddhist arts in these two areas. Moreover, this paper reveals that this motif emerged earlier in the Ye City area than in the Dingzhou area, and diffused to the latter after it became popular in the Ye City area. By these conclusions, this paper infers that the white marble meditating statue seated in half-lotus position with the date of the second year of Wuding Era (544 CE) in the collection of the Metropolitan Museum of Art in New York, USA was produced in Ye City area.

scholarly journals A comparative study of Pleurosigma subrectum and P. acus (Bacillariophyta)

Phytotaxa ◽  
2015 ◽  
Vol 207 (3) ◽  
pp. 273
Author(s):  
FRITHJOF A.S. STERRENBURG ◽  
STUART R. STIDOLPH ◽  
EUGENIA A. SAR ◽  
Ines Sunesen
Keyword(s):  
Comparative Study ◽  
Original Data ◽  
Type Material ◽  
Diatom Species ◽  
Morphological Differences ◽  
Sem Investigation ◽  
Made In

In continuation of an earlier paper on Pleurosigma species with an (almost) non-sigmoid valve and raphe sternum, a comparative study was made in LM and SEM of Pleurosigma subrectum and P. acus. For P. subrectum, slides and a subsample of the type material were examined. For P. acus no unmounted material permitting SEM investigation is extant; a sample containing specimens fully matching the type in LM was therefore used as epitype material for SEM. The original data on striation of P. acus are emended. No morphological differences indicating separate specific status of these two taxa were observed and P. acus is therefore here designated a heterotypic synonym of P. subrectum. From the data now available, this is a very widely distributed species. The study demonstrates the indispensable role of collections for investigations on the diversity and distribution of diatom species.

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