scholarly journals Synthesis and Characterization of 〖(CdO)〗_(1-x) 〖Mg〗_x films by pulsed laser deposition

2020 ◽  
Vol 18 (45) ◽  
pp. 59-67
Author(s):  
Jasim Mohamad Hussain ◽  
Awatif S Jasim ◽  
Kadhim Abdulwahid Aadim

In this study, the effect of grafting with magnesium (Mg) ratios (0.1, 0.3, 0.5) on the structural and optical properties of cadmium oxide films (CdO) was studied, as these films were prepared on glass bases using the method of pulse laser deposition (PLD). The crystallization nature of the prepared membranes was examined by X-ray diffraction technique (XRD), which showed that the synthesis of the prepared membranes is polycrystalline, and (AFM) images also showed that the increased deformation with magnesium led to an increase in the grain size ratio and a decrease in surface roughness, as well as the absorption coefficient was calculated. And the optical energy gap for the prepared membranes, where it was found that the absorption coefficient increases with the increase in the proportion of vaccination and that the energy gap decreases with increasing rates of vaccination.

2021 ◽  
Vol 2114 (1) ◽  
pp. 012012
Author(s):  
Tamara S. Hussein ◽  
Ala F. Ahmed

Abstract In this study, the effect of grafting with Iron (Fe) ratios (0.1, 0.3 and 0.5) on the structural and optical properties of cadmium oxide films (CdO) was studied, as these films were prepared on glass bases using the method of pulse laser deposition (PLD). The crystallization nature of the prepared films was examined by X-ray diffraction technique (XRD), which showed that the synthesis of the prepared films is polycrystalline, and Atomic Force Microscope (AFM) images also showed that the increased vaccination with Iron led to an increase in the crustal size ratio and a decrease in surface roughness, The absorption coefficient was calculated and the optical energy gap for the prepared thin films. It was found the absorption decreases and the energy gap decreases with the increase of doping ratio.


2013 ◽  
Vol 203-204 ◽  
pp. 193-197
Author(s):  
Piotr Sagan ◽  
Volodymyr Popovych ◽  
Mariusz Bester ◽  
Marian Kuzma

In this paper we have obtained CdCrTe thin layers by PLD method using the YAG:Nd3+ laser with pulse length 250μs. Synthesized CdCrTe solid solution with 50% at. of Cr has been taken as a target. The layers were deposited on KCl substrate. The target and films were analyzed using X-ray diffraction, TEM microscope and THEED electron diffraction. The morphology of the layers are homogenous. However, we have detected several crystallographic phases: cubic CdTe, hexagonal Cr and hexagonal Te. From the measurements of lattice constant of the layer, their composition was determined to be x=0,14


Lithium niobate (LiNbO3) nanostructure thin film was prepared and deposited on the substrates made of quartz by utilizing pulse laser deposition (PLD) technique. The effect of substrate temperature changing on the optical and structural properties of LiNbO3 films was investigated and studied. The chemical mixture was prepared by mixing the raw material (Li2CO3, Nb2O5) with Ethanol liquid without any further purification, at the stirrer time 3hrs without heating, then the formed material was overexposed to annealing process at 1000°C for 4hrs. LiNbO3 nanostructure thin film was characterized and analyzed by utilizing the Ultra-Violet visible (UV-vis) and X-Ray Diffraction (XRD). The UV-vis results showed that the increase in the substrate temperature to 300°C leads to decrease in the values of transmission (T%), absorption (A) and optical energy gap (Eg) and increase in the values of reflection (R%) and refractive index (n). While, the XRD results explained that the LiNbO3 structure became more pure and crystalline with increase the substrate temperature, because the intensity of the phase 2θ at the value of 34.8°, 40.06° and 48.48° correspond to (110), (113) and (024) planes disappeared at the substrate temperature 300°C. So, all presented results give a good indication to use LiNbO3 nanostructure thin film prepared at the substrate temperature 300°C for manufacturing the optical waveguide to give the best results.


Author(s):  
Nahida B. Hasan ◽  
Ghusson H. Mohammed ◽  
Mohammed A. Abdul Majeed

CdO thin films have been deposited at different concentration of SnO2 (x= (0.0, 0.05, 0.1, 0.15 and 0.2)) Wt. % onto glass substrates by pulsed laser deposition technique (PLD) using Nd-YAG laser with λ=1064nm, energy=600mJ and number of shots=500. X-ray diffraction (XRD) results reveal that the deposited (CdO)1-x(SnO2)x thin films cubic structure and the grain size increase with increasing annealing temperature and increasing concentration of SnO2. The optical transition in the (CdO)1-x(SnO2)x thin films are observed to be allowed direct transition. The value of the optical energy gap decreases with increasing of annealing temperatures and increase with increasing concentration of SnO2 for all samples.


1996 ◽  
Vol 426 ◽  
Author(s):  
D. Compaan ◽  
Z. Feng ◽  
G. Contreras-Puente ◽  
C. Narayanswamy ◽  
A. Fischer

AbstractInterdiffusion of sulfur and tellurium across the CdS/CdTe interface is fundamentally important in the operation of CdTe solar cells. However, the properties of the resulting alloy semiconductor, CdSxTe1-x, are not well understood. We have prepared films of this ternary material by pulsed excimer laser deposition (PLD) across the alloy range. These films were examined by x-ray diffraction, wavelength dispersive x-ray spectroscopy, optical absorption, and Raman scattering to determine the influence of sulfur content on the crystal structure, lattice constant, energy gap, and vibrational mode behavior.


1997 ◽  
Vol 493 ◽  
Author(s):  
J-P. Maria ◽  
Wes Hackenberger ◽  
S. Trolier-McKinstry

ABSTRACT(001)-oriented heterostructures consisting of LaAlCO3 substrates, SrRuO3 bottom electrodes, and Pb(Mg1/3Nb2/3) O3-PbTiO3 (PMN-PT) piezoelectric actuators were deposited by pulsed laser deposition (PLD). 4-circle x-ray diffraction analysis confirmed the epitaxial growth of each layer. In general, the electrical properties were found to be very sensitive to the processing conditions, in particular, the growth temperature. At growth temperatures below ∼620°C, the temperature dependence of the dielectric constant and the onset of a hysteritic polarization were found to be depressed by as much as 80 °C. When growth temperatures were increased above 660°C, electrical properties with temperature dependencies more consistent with those of single crystals were observed.


2021 ◽  
Author(s):  
Raid Ismail ◽  
N. Hasan ◽  
Suaad S. Shaker

Abstract In this study, we have prepared Bi2Sr2CaCu2Ox (BSCCO) nanostructure films by pulsed laser deposition technique (PLD). The structural and optical properties of nanostructured Bi2Sr2CaCu2Ox film were investigated. X-ray diffraction (XRD) studies of the films prepared at 6.5 and 8 J/cm2 showed that the films are crystalline in nature with orthorhombic phase. Scanning electron microscopy (SEM) investigation confirmed that the deposited film has spherical grains and the mean grain size of the film increased from 150 nm to 250 nm as laser energy density increased from 6.5 to 8 J/cm2. The optical energy gap of the film decreased from 2.24 to 1.7eV when the energy density increased. The optoelectronic properties of the Bi2Sr2CaCu2Ox/Si heterojunction photodetector have been investigated. The photodetectors exhibited rectification properties and the ideality factor of the photodetectors deposited 6.5 and 8 J/cm2 were 2.3 and 4.2, respectively. The on/off ratio of the photodetectors was found to be 761 and 385 for the photodetectors prepared with6.5 and 8 J/cm2, respectively. A responsivity of 514 mA/W at 860 nm was found for the photodetector prepared with 6.5 J/cm2 without using post annealing and/or buffer layer.


Author(s):  
Zehraa N. Abdul-Ameer ◽  
Ibrahim R. Agool

ZnO,CdO,ZnO-CdO nanocomposite were prepared using electrochemical deposition the prepared samples were characterized using X-ray diffraction and the photoluminenscence spectroscopy (PL) to get the surface morphology leading to calculation of optical energy gap .the grain size determined by Scherrer's equation (22-25) nm .through the calculation of Eg ,it was noticed a red shift behavior in ZnO manner due to addition of CdO content


2020 ◽  
Vol 18 (45) ◽  
pp. 1-8
Author(s):  
Kadhim A. Aadim ◽  
Baida M. Ahmed ◽  
Madyan A. Khalaf

In this work, we study the effect of doping Sn on the structural and optical properties of pure cadmium oxide films at different concentrations of Tin (Sn) (X=0.1,0.3 and 0.5) .The films prepared by using the laser-induced plasma at wavelength of laser 1064 nm and duration 9 ns under pressure reached to 2.5×10-2 mbar. The results of X-ray diffraction tests showed that the all prepared films  are polycrystalline. As for the topography of the films surface, it was measured using AFM , where the results showed that the grain size increases with an increase in the percentage of doping  in addition to an increase in the average roughness. The optical properties of all films have also been studied through the absorbance spectrum of the range  of  the wavelength (350-1100) nm, where the optical energy gap was direct transitions it was found that the value of the optical energy gap increased with increasing the doping.


2009 ◽  
Vol 6 (1) ◽  
pp. 141-149
Author(s):  
Baghdad Science Journal

A polycrystalline CdSe thin films doped with (5wt%) of Cu was fabricated using vacuum evaporation technique in the substrate temperature range(Ts=RT-250)oC on glass substrates of the thickness(0.8?m). The structure of these films are determined by X-ray diffraction (XRD). The X-ray diffraction studies shows that the structure is polycrystalline with hexagonal structure, and there are strong peaks at the direction (200) at (Ts=RT-150) oC, while at higher substrate temperature(Ts=150-250) oC the structure is single crystal. The optical properties as a function of Ts were studied. The absorption, transmission, and reflection has been studied, The optical energy gap (Eg)increases with increase of substrate temperature from (1.65-1.84)eV due to improvement in the structure. The amorphousity of the films decreases with increasing Ts. The films have direct energy gap and the absorption edge was shift slightly towards smaller wavelength for CdSe:Cu thin film with increase of substrate temperature.it was found that the absorption coefficient was decreased with increasing of substrate temperature due to increases the value of(Eg). The CdSe:Cu films showed absorption coefficient in the range (0.94 x104-0.42x104)cm-1at Ts=RT-250 oC. Also the density of state decreases with increasing of substrate temperatures from (0.20-0.07)eV, it is possibly due to the recrystallization by the heating substrate temperatures.. Also the extinction coefficient, refractive index and dielectric constant have been studied.


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