Effects of gamma radiation on the layered structure of lithium silicon – niobate.

In this work, it is shown that when an ionizing radiation pulse acts on surfactant-type devices in which a silicon single crystal is deposited with a gap on a piezoelectric substrate made of lithium niobate, the output signal is distorted. It was found that, depending on the type of conductivity of the material deposited on the lithium niobate, a different character of recovery of the device parameters was observed. The effect of ionizing radiation on air-gap devices operating as a memory correlator showed that the previously recorded signals were erased at a dose rate of ≥ 106 rad. To explain these dependencies, a model is used based on the fact that photo carriers excited by ionizing radiation in the depleted layer are captured by traps at the silicon-air interface for devices with an air gap and at the silicon-silicon oxide interface for monolithic structures The presented model, which takes into account traps not at the interface, explains most of the effects that cause a change in the output high frequency (RF) signal.