scholarly journals The non-linear optical crystal growth and characterization of piperizantum p- aminobentzone

BIBECHANA ◽  
2018 ◽  
Vol 16 ◽  
pp. 15-22
Author(s):  
M Vallikkodi ◽  
S Sudhahar
Keyword(s):  
Raman Spectroscopy ◽  
Nonlinear Optical ◽  
Ultra Violet ◽  
Slow Evaporation ◽  
X Ray Diffraction ◽  
Visible Spectroscopy ◽  
X Ray ◽  
Optical Crystal

The nonlinear optical properties of piperizanium p – aminobenzoate (PZPAB) crystal were successfully grown with the help of temperature gradient (Slow evaporation) method. The good quality of PZPAB single crystal is formed. The PZPAB is characterized with the help of X-ray diffraction (XRD), Fourier transform infrared (FTIR) measurement, photoluminescence (PL), Raman spectroscopy, ultra violet visible spectroscopy (UV) and finally etching analysis was done.BIBECHANA 6 (2019) 5-22

Characterization of Natural and Synthesized FeTiO3 Crystals With RBS/PIXE/XRD

1997 ◽  
Vol 07 (03n04) ◽  
pp. 265-275
Author(s):  
R. Q. Zhang ◽  
S. Yamamoto ◽  
Z. N. Dai ◽  
K. Narumi ◽  
A. Miyashita ◽  
...  
Keyword(s):  
Single Crystals ◽  
Ion Beam ◽  
Pressure Control ◽  
Floating Zone ◽  
X Ray Diffraction ◽  
X Ray ◽  
Beam Analysis ◽  
Ppm Level

Natural FeTiO 3 (illuminate) and synthesized FeTiO 3, single crystals were characterized by Rutherford backscattering spectroscopy combined with channeling technique and particle-induced x-ray emission (RBS-C and PIXE). The results obtained by the ion beam analysis were supplemented by the x-ray diffraction analysis to identify the crystallographic phase. Oriented single crystals of synthesized FeTiO 3 were grown under the pressure control of CO 2 and H 2 mixture gas using a single-crystal floating zone technique. The crystal quality of synthesized FeTiO 3 single crystals could be improved by the thermal treatment but the exact pressure control is needed to avoid the precipitation of Fe 2 O 3 even during the annealing procedure. Natural FeTiO 3 contains several kinds of impurities such as Mn , Mg , Na and Si . The synthesized samples contain Al , Si and Na which are around 100 ppm level as impurities. The PBS-C results of the natural sample imply that Mn impurities occupy the Fe sublattice in FeTiO 3 or in mixed phase between ilmenite and hematite.

Growth and Characterization of Ammonium Dihydrogen Phosphate (ADP) Doped with H3BO3 Crystals Grown by Slow Evaporation Method

2016 ◽  
Vol 675-676 ◽  
pp. 573-576 ◽  
Author(s):  
Pratya Thongpanit ◽  
Weerapong Chewpraditkul ◽  
Nakarin Pattanaboonmee
Keyword(s):  
Boric Acid ◽  
Temperature Stability ◽  
Hardness Measurement ◽  
Dihydrogen Phosphate ◽  
Ammonium Dihydrogen Phosphate ◽  
Slow Evaporation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Evaporation Method

Ammonium dihydrogen phosphate (ADP) crystals is very interesting due to its nonlinear optical property. This study investigated on improving of material for academic use by adding boric acid to modify ADP crystals. Slow evaporation method in aqueous solutions of pure ADP and ADP doped with three concentrations of H3BO3 as 0.1, 1.0, 5.0 %wt were studied. The grown crystals were confirmed tetragonal structure by powder X-ray diffraction studies. The FTIR spectrum analysis presented various functional groups of boron in three conditions of doped ADP. TGA study was comfirned the temperature stability at 220 °C for both pure and doped ADP crytals. The machanical stress was analyzed by Vicker’s hardness measurement. The results of this analysis showed boric acid doped 1.0 %wt had superior machanical stress from 10 to 75 grams. ADP doped with boric acid at 1.0 %wt was accepted in all test properties.

Deposition of TRISO Particles With Superhard SiC Coatings and the Characterization of Anisotropy by Raman Spectroscopy

2009 ◽  
Vol 131 (4) ◽  
Author(s):  
E. López-Honorato ◽  
P. J. Meadows ◽  
J. Tan ◽  
Y. Xiang ◽  
P. Xiao
Keyword(s):  
Solid Solution ◽  
Raman Spectroscopy ◽  
Pyrolytic Carbon ◽  
X Ray Diffraction ◽  
X Ray ◽  
Flat Substrate ◽  
High Concentrations ◽  
Triso Particles ◽  
Sic Coatings

In this work we have deposited silicon carbide (SiC) at 1300°C with the addition of small amounts of propylene. The use of propylene and high concentrations of methyltrichlorosilane (9 vol %) allowed the deposition of superhard SiC coatings (42 GPa). The superhard SiC could result from the presence of a SiC–C solid solution, undetectable by X-ray diffraction but visible by Raman spectroscopy. Another sample obtained by the use of 50 vol % Argon, also showed the formation of SiC with good properties. The use of a flat substrate together with the particles showed the importance of carrying out the analysis on actual particles rather than in flat substrates. We show that it is possible to characterize the anisotropy of pyrolytic carbon by Raman spectroscopy.

Characterization of WC-Co Coatings Using HP/HVOF Process

1996 ◽  
Author(s):  
S.Y. Hwang ◽  
B.G. Seong ◽  
M.C. Kim
Keyword(s):  
Wear Resistance ◽  
X Ray Diffraction ◽  
High Carbon ◽  
Properties Of Coatings ◽  
X Ray ◽  
Hvof Process ◽  
Number Of Passes ◽  
Oxygen Fuel

Abstract To maintain surface roughness of process rolls in cold rolling steel plants, WC-Co coatings have been known to be effective ones. In this study, a high pressure/high velocity oxygen fuel (HP/HVOF) process was used to obtain WC-Co coatings. To get the best quality of coatings, WC-Co coatings are sprayed with numerous powders made by various processes. These powders include agglomerated sintered powders, fused-crushed powders, extra high carbon WC-Co powders and (W2C, WC)-Co powders. After spraying, properties of coatings such as hardness, wear resistance. X-ray diffraction, and microstructures were analyzed. For coatings produced by agglomerated-sintered powders, hardness of the coating increased as power levels and the number of passes were increased. In case of the coatings produced by fused-crushed powders, a very low deposition rate was obtained due to a low flowablity of the powders. In addition, the WC-Co coatings sprayed with extra carbon content of WC-Co did not show improved hardness and wear resistance. Also, some decomposition of WC was observed in the coating. Finally, the coatings produced by (W2C, WC)-Co powders produced higher hardness and lower wear resistance coating.

scholarly journals Crystallization, optimization and preliminary X-ray characterization of a metal-dependent PI-PLC fromStreptomyces antibioticus

2012 ◽  
Vol 68 (11) ◽  
pp. 1378-1386 ◽  
Author(s):  
Michael R. Jackson ◽  
Thomas L. Selby
Keyword(s):  
X Ray Diffraction ◽  
Hanging Drop ◽  
Orthorhombic Space Group ◽  
X Ray ◽  
Streptomyces Antibioticus ◽  
Cell Parameters ◽  
Heavy Atoms ◽  
Hanging Drop Method

A recombinant metal-dependent phosphatidylinositol-specific phospholipase C (PI-PLC) fromStreptomyces antibioticushas been crystallized by the hanging-drop method with and without heavy metals. The native crystals belonged to the orthorhombic space groupP222, with unit-cell parametersa= 41.26,b= 51.86,c = 154.78 Å. The X-ray diffraction results showed significant differences in the crystal quality of samples soaked with heavy atoms. Additionally, drop pinning, which increases the surface area of the drops, was also used to improve crystal growth and quality. The combination of heavy-metal soaks and drop pinning was found to be critical for producing high-quality crystals that diffracted to 1.23 Å resolution.

Investigation of Some New Nonlinear Optical Crystals by Means of NQR, IR and X-Ray Diffraction Methods

1998 ◽  
Vol 53 (6-7) ◽  
pp. 528-536 ◽  
Author(s):  
A. M. Petrosyan ◽  
S. S. Terzyan ◽  
V. M. Burbelo ◽  
R. P. Sukiasyan
Keyword(s):  
Nonlinear Optical ◽  
Nonlinear Optical Crystal ◽  
X Ray Diffraction ◽  
X Ray ◽  
Nonlinear Optical Crystals ◽  
Optical Crystals ◽  
Optical Crystal

Abstract Some new analogues of the nonlinear optical crystal L-arginine phosphate monohydrate (LAP) (Arg • HIO3 , Arg • 2HIO3 , Lys • HIO3 , Lys • 2HIO3 , Lys • 3HIO3 , Bet • 3HIO3) were obtained and investigated by means of IR, NQR, X-ray diffraction and SHG methods. The importance of this class of crystals for revealing new nonlinear optical crystals is pointed out.

Synthesis, crystal growth and characterization of di-valine maleic – a new nonlinear optical material

RSC Advances ◽  
2016 ◽  
Vol 6 (101) ◽  
pp. 99139-99148 ◽  
Author(s):  
Soma Adhikari ◽  
Tanusree Kar ◽  
Saikat Kumar Seth
Keyword(s):  
Dipole Moment ◽  
Crystal Growth ◽  
Nonlinear Optical ◽  
Dft Method ◽  
Nonlinear Optical Material ◽  
X Ray Diffraction ◽  
X Ray ◽  
First Order ◽  
Shg Efficiency

A new NLO material namely di-valine maleic (VM) was synthesized and characterized by X-ray diffraction analysis. The SHG efficiency of VM was investigated and dipole moment, polarizability, first order hyperpolarizability were calculated by DFT method.

scholarly journals Growth and Characterization of BxGa1−xN on 6H-SiC (0001) by Movpe

1999 ◽  
Vol 4 (S1) ◽  
pp. 429-434 ◽  
Author(s):  
C. H. Wei ◽  
Z. Y. Xie ◽  
J. H. Edgar ◽  
K. C. Zeng ◽  
J. Y. Lin ◽  
...  
Keyword(s):  
Single Phase ◽  
Band Edge Emission ◽  
Reactant Ratio ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Edge Emission ◽  
X Ray ◽  
Two Phases

Boron was incorporated into GaN in order to determine its limits of solubility, its ability of reducing the lattice constant mismatch with 6H-SiC, as well as its effects on the structural and optical properties of GaN epilayers. BxGa1−xN films were deposited on 6H-SiC (0001) substrates at 950 °C by low pressure MOVPE using diborane, trimethylgallium, and ammonia as precursors. A single phase alloy with x=0.015 was successfully produced at a gas reactant B/Ga ratio of 0.005. Phase separation into pure GaN and BxGa1−xN alloy with x=0.30 was deposited for a B/Ga reactant ratio of 0.01. This is the highest B fraction of the wurtzite structure alloy ever reported. For B/Ga ratio ≥ 0.02, no BxGa1−xN was formed, and the solid solution contained two phases: wurtzite GaN and BN based on the results of Auger and x-ray diffraction. The band edge emission of BxGa1−xN varied from 3.451 eV for x=0 with FWHM of 39.2 meV to 3.465 eV for x=0.015 with FWHM of 35.1 meV. The narrower FWHM indicated that the quality of GaN epilayer was improved with small amount of boron incorporation.

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