Planar waveguides produced by implanting Si and C ions in rutile
Keyword(s):
Planar waveguides were generated in samples of rutile crystal (TiO2) by bombarding with two typesof ion: silicon and carbon. Rutile is used because of its anisotropic properties, particularly its birefrin-gence. The guide is generated due to damage caused by the ions in the crystal which change its index ofrefraction. Three parameters were used: the implantation ion energy, the implantation uence, and theorientation of the crystallographic planes. The refractive index prole of the irradiated sample was cal-culated and together with the value of the optical barrier the comparison was made between the dierentwaveguides generated.
Keyword(s):
1988 ◽
Vol 35
(6)
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pp. 919-924
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1994 ◽
Vol 03
(01)
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pp. 101-116
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1996 ◽
Vol 5
(6)
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pp. 791-798
Keyword(s):
2005 ◽
Vol 45
(4)
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pp. 342-345
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