Impact of radio frequency source power-induced ion energy on a refractive index of SiN film deposited by a pulsed-PECVD at room temperature

2010 ◽  
Vol 518 (22) ◽  
pp. 6554-6557 ◽  
Author(s):  
Suyeon Kim ◽  
Byungwhan Kim
Keyword(s):  
Refractive Index ◽  
Radio Frequency ◽  
Room Temperature ◽  
Source Power ◽  
Ion Energy ◽  
Frequency Source

Radio Frequency Source Power-Induced Ion Energy Impact on SiN Films Deposited Using a Room Temperature SiH4–N2 Plasma

2011 ◽  
Vol 11 (2) ◽  
pp. 1314-1318 ◽  
Author(s):  
Byungwhan Kim ◽  
Sanghee Kwon ◽  
Hyung-Su Woo ◽  
Jeong Kim ◽  
Sang Chul Jung
Keyword(s):  
Radio Frequency ◽  
Room Temperature ◽  
Source Power ◽  
Ion Energy ◽  
Energy Impact ◽  
Frequency Source ◽  
N2 Plasma

Hydrogenation and Defect Creation in GaAs-Based Devices During High Density Plasma Processing

1998 ◽  
Vol 510 ◽  
Author(s):  
T. Maeda ◽  
J. W. Lee ◽  
C. R. Abernathy ◽  
S. J. Pearton ◽  
F. Ren ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Inductively Coupled Plasma ◽  
Electron Cyclotron Resonance ◽  
Field Effect Transistors ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Source Power ◽  
Ion Energy ◽  
Inductively Coupled ◽  
Self Bias

AbstractThe effects of Inductively Coupled Plasma (ICP) and Electron Cyclotron Resonance (ECR) H2 plasmas on GaAs metal semiconductor field effect transistors (MESFETs), high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs) have been measured as a function of ion flux, ion energy and process pressure. The chemical effects of hydrogenation have been compared to direct physical bombardment by Ar plasmas under the same conditions. Si dopant passivation in MESFETs and HEMTs and C base-dopant passivation in HBTs produces much larger changes in sheet resistance, breakdown voltage and device gain or transconductance than Ar ion bombardment and suggests that H2-containing plasma chemistries (CH4/H2 for semiconductor etching, SiH4 for dielectric deposition, CHF3 for dielectric etching) should be avoided, or at least the exposure of the surface minimized. In some cases the device degradation is less for higher source power conditions, due to the suppression of cathode dc self-bias and hence ion energy.

Analysis of Thermal Variation of Length and Refractive Index of Lead Fluoride to Study its Optical Properties

1989 ◽  
Vol 172 ◽  
Author(s):  
T. S. Aurora ◽  
D. O. Pederson ◽  
S. M. Day
Keyword(s):  
Refractive Index ◽  
Room Temperature ◽  
Linear Thermal Expansion ◽  
Small Variation ◽  
Published Data ◽  
Thermal Variation ◽  
Lead Fluoride ◽  
Superionic Phase Transition ◽  
Lorenz Relation ◽  
Good Agreement

AbstractLinear thermal expansion and refractive index variation have been measured in lead fluoride with a laser interferometer as a function of temperature. Data has been analyzed using the Lorentz-Lorenz relation. Molecular polarizability, band gap, variation of refractive index with density, and strain-polarizability parameter have been studied as a function of temperature. They exhibit a small variation with temperature except near the superionic phase transition where the variation appears to be more pronounced. The results are in good agreement with the published data near room temperature.

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