Effect of Surface Roughness on STEM Samples Prepared by FIB

1999 ◽  
Vol 5 (S2) ◽  
pp. 906-907
Author(s):  
C.B. Vartuli ◽  
F.A. Stevie ◽  
T. Kamino
Keyword(s):  
Electron Microscope ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Sample Surface ◽  
Scanning Transmission Electron Microscope ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Speed Of Analysis ◽  
Scanning Electron ◽  
Effect Of Surface

The Scanning Transmission Electron Microscope (STEM) can provide images beyond Scanning Electron Microscope (SEM) capability, on samples which do not have to be prepared to the degree required for Transmission Electron Microscopy (TEM). For some applications, such as semiconductor production, speed of analysis is critical. This paper explores Focused Ion Beam (FIB) sample preparation for STEM.The samples were prepared using an Hitachi FB-2000A FEB tool. Two analysis regions of similar thickness were cut. The rough sample was milled using a 500 pA beam and no polish cut. The smooth sample was prepared by cutting first with a 500 pA beam, and then using additional, smaller diameter beams, concluding with a 30 pA beam. This resulted in a sample surface polished to a degree similar to that used for TEM specimens. The samples were imaged in an Hitachi HD-2000 STEM at 200KeV. Transmission electron images taken at 100 kx are shown in Figure 1 of the rough sample and of the smooth sample.

scholarly journals An Analysis of Li Ion Secondary Battery Materials by Using Focused Ion Beam Micro-sampling Technique and Cold Field Emission Scanning Transmission Electron Microscope

2010 ◽  
Vol 16 (S2) ◽  
pp. 214-215
Author(s):  
T Tanigaki ◽  
K Ito ◽  
K Nakamura ◽  
Y Nagakubo ◽  
J Azuma ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Sampling Technique ◽  
Scanning Transmission Electron Microscope ◽  
Battery Materials ◽  
Secondary Battery ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Li Ion

Extended abstract of a paper presented at Microscopy and Microanalysis 2010 in Portland, Oregon, USA, August 1 – August 5, 2010.

scholarly journals Stem-EDX and FIB-SEM Tomography of ALLVAC 718Plus Superalloy

2016 ◽  
Vol 61 (2) ◽  
pp. 535-542 ◽  
Author(s):  
A. Kruk ◽  
G. Cempura ◽  
S. Lech ◽  
A. Czyrska -Filemonowicz
Keyword(s):  
Electron Microscope ◽  
Focused Ion Beam ◽  
Electron Tomography ◽  
Ion Beam ◽  
High Strength ◽  
Strengthening Mechanism ◽  
Scanning Transmission Electron Microscope ◽  
Particle Analysis ◽  
Transmission Electron ◽  
Scanning Transmission

Abstract Allvac 718Plus (718Plus) is a high strength, corrosion resistant nickel- based superalloy used for application in power generation, aeronautics and aerospace industry. The 718Plus microstructure consists of a γ matrix with γ’-Ni3(Al,Ti) and some δ- Ni3Nb phases as well as lamellar particles (η-Ni3Ti, η*-Ni6AlNb or Ni6(Al,Ti)Nb) precipitated at the grain boundaries. The primary strengthening mechanism for this alloy is a precipitation hardening, therefore size and distribution of precipitates are critical for the performance of the alloy. The aim of this study was to characterize precipitates in the 718Plus superalloy using Scanning Transmission Electron Microscope combined with Energy Dispersive X-ray Spectroscopy (STEM-EDX) and Focused Ion Beam Scanning Electron Microscope (FIB-SEM). The STEM-EDX and FIB-SEM tomography techniques were used for 3D imaging and metrology of the precipitates. Transmission electron microscopy and EDX spectroscopy were used to reveal details of the 718Plus microstructure and allow determine chemical composition of the phases. The study showed that electron tomography techniques permit to obtain complementary information about microstructural features (precipitates size, shape and their 3D distribution) in the reconstructed volume with comparison to conventional particle analysis methods, e.g. quantitative TEM and SEM metallography

Application of Passive Voltage Contrast (PVC) to Dual Beam Focused Ion Beam (FIB) Based Sample Preparation for the Scanning/Transmission Electron Microscope (S/TEM)

2014 ◽  
Author(s):  
Corey Senowitz ◽  
Hieu Nguyen ◽  
Ruby Vollrath ◽  
Caiwen Yuan ◽  
Fati Rassolzadeh ◽  
...  
Keyword(s):  
Electron Microscope ◽  
Sample Preparation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Scanning Transmission Electron Microscope ◽  
Dual Beam ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Voltage Contrast ◽  
Technology Nodes

Abstract The modern scanning transmission electron microscope (S/TEM) has become a key technology and is heavily utilized in advanced failure analysis (FA) labs. It is well equipped to analyze semiconductor device failures, even for the latest process technology nodes (20nm or less). However, the typical sample preparation process flow utilizes a dual beam focused ion beam (FIB) microscope for sample preparation, with the final sample end-pointing monitored using the scanning electron microscope (SEM) column. At the latest technology nodes, defect sizes can be on the order of the resolution limit for the SEM column. Passive voltage contrast (PVC) is an established FA technique for integrated circuit (IC) FA which can compensate for this resolution deficiency in some cases. In this paper, PVC is applied to end-pointing cross-sectional S/TEM samples on the structure or defect of interest to address the SEM resolution limitation.

Focused Ion Beam Analysis of Low-K Dielectrics

2000 ◽  
Author(s):  
H. J. Bender ◽  
R. A. Donaton
Keyword(s):  
Electron Microscope ◽  
Cross Section ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Single Step ◽  
Specimen Preparation ◽  
Transmission Electron ◽  
Beam Analysis ◽  
Low K ◽  
Scanning Electron

Abstract The characteristics of an organic low-k dielectric during investigation by focused ion beam (FIB) are discussed for the different FIB application modes: cross-section imaging, specimen preparation for transmission electron microscopy, and via milling for device modification. It is shown that the material is more stable under the ion beam than under the electron beam in the scanning electron microscope (SEM) or in the transmission electron microscope (TEM). The milling of the material by H2O vapor assistance is strongly enhanced. Also by applying XeF2 etching an enhanced milling rate can be obtained so that both the polymer layer and the intermediate oxides can be etched in a single step.

High-resolution backscattered electron images in the scanning electron microscope

1992 ◽  
Vol 50 (2) ◽  
pp. 1608-1609
Author(s):  
Oliver C. Wells ◽  
P.C. Cheng
Keyword(s):  
Electron Microscope ◽  
High Resolution ◽  
Scanning Electron Microscope ◽  
Transmission Electron Microscope ◽  
Scanning Transmission Electron Microscope ◽  
Atomic Resolution ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Backscattered Electron ◽  
Scanning Electron

In this discussion the words “high resolution imaging” of a solid sample in the scanning electron microscope (SEM) mean that details can be resolved that are considerably smaller than the penetration depth of the incident electron beam (EB) into the specimen. “Atomic resolution” in either the transmission electron microscope (TEM) or scanning transmission electron microscope (STEM) means that columns of atoms are resolved.Image contrasts in the backscattered electron (BSE) image are strongly affected by the specimen tilt and by the position and energy sensitivity of the BSE detector. The expression “BSE image” generally implies that the specimen is normal to the beam and the detector is above it. This shows compositional variations in the specimen with a spatial resolution limited by the spreading of the EB during the initial stages of penetration. This is similar in basic principle to the Z-Contrast method in the STEM that shows atomic resolution from a thinned single crystal mounted in the magnetic field of the focusing lens.

Applications of STEM to Problems in Materials Science

1980 ◽  
Vol 38 ◽  
pp. 102-105
Author(s):  
John B. Vander Sande ◽  
Anthony J. Garratt-Reed
Keyword(s):  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Materials Science ◽  
Data Interpretation ◽  
Scanning Transmission Electron Microscope ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Powerful Research Tool ◽  
Full Utilization ◽  
Scanning Electron

The scanning transmission electron microscope (STEM) concept developed gradually as attempts were made to combine the advantages and eliminate the disadvantages of the transmission electron microscope, the scanning electron microscope, and the electron microprobe. However, the marketing of the first commercial dedicated STEM (the VG Microscopes HB5) spurred the development of the instrumentation and the understanding of the data interpretation required for full utilization of the technique. Today, while some avenues remain incompletely developed, the STEM is accepted as a powerful research tool, and the prospect of being able to study the products of the interaction of a very fine electron beam with a specimen has provoked workers to perform imaginative and informative experiments. Below are presented a few recent samples of the applications of such a STEM, in the authors’ laboratory, to problems in the field of materials science.

The Method for Retaining an Intermittent Electrical Failure Signature during the Interconnect Immobilization Process throughout Failure Analysis

2009 ◽  
Author(s):  
Julie Schuchman ◽  
Julie Willis
Keyword(s):  
Sample Preparation ◽  
First Generation ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Scanning Transmission Electron Microscope ◽  
Electrical Failure ◽  
Dual Beam ◽  
Transmission Electron ◽  
Scanning Transmission ◽  
Material Sample

Abstract This paper deals primarily with the difficulties and solutions to scanning transmission electron microscope (STEM) sample preparation by dual beam focused ion beam. Approximately twenty major challenges were encountered spanning hardware, software, and material sample preparation. The main focus is upon the variety of challenges which are encountered in trying to implement automated STEM and TEM sample fabrication with minimal operator input and the engineering solutions implemented to overcome these challenges. The automated STEM script has evolved significantly from the first generation attempt and is described in more detail in this paper. The mechanical, software, and materials challenges encountered are also presented. The paper highlights a mechanical issue with the ion aperture motor mechanism, which required extensive troubleshooting to fully diagnose and correct. A long standing software routine had to be modified to fully enable script automation by extending the beam dwell time of the automatic brightness contrast routine.

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