A Novel Method to Inspect Deep Trench Capacitor Planar Profiles in DRAM
Keyword(s):
Ion Beam
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Abstract This paper presents a novel method to inspect deep trench (DT) planar profiles at any particular depths using the mechanical polishing method instead of the Focused Ion Beam (FIB) milling method. The sample is polished at a small beveled angle and then inspected in the Scanning Electron Microscope (SEM). This method creates a large area for the inspection of DT profiles. It is accurate and fast in providing the result on process evaluation and failure analysis. Since the FIB is not needed, it is also simple and cost effective.