Backside Failure Analysis by Electroluminescence on Microwave Devices

2008 ◽  
Author(s):  
M. Bouya ◽  
D. Carisetti ◽  
P. Delaqueze ◽  
J.C. Clement ◽  
N. Malbert ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Failure Mechanisms ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Heterojunction Bipolar Transistor ◽  
High Electron ◽  
Chemical Sensitivity ◽  
High Chemical ◽  
High Electron Mobility ◽  
Failure Localization

Abstract III-V HBT (Heterojunction Bipolar Transistor) and HEMT (High Electron Mobility Transistor) are playing a key role for power and RF low noise applications. As well as the improvement of the MMIC performances, the localization of the defects and the failure analysis of these devices are very challenging. Active area thickness is only few nanometers, backside failure localization is mandatory because of thermal drain or metal bridge covering the front side, materials involved might be of ultimate hardness and/or high chemical sensitivity while failure mechanisms strongly differ from Si technology ones. To face these challenges, we have developed a complete approach, without degrading the component, based on backside failure analysis by electroluminescence. Its efficiency and completeness have been demonstrated through case studies.

Infrared and Visible—Near Infrared Electroluminescence Developments for FA in AlGaN/GaN HEMTS on SiC

2010 ◽  
Author(s):  
M. Bouya ◽  
D. Carisetti ◽  
J.C. Clement ◽  
N. Malbert ◽  
N. Labat ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Near Infrared ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Civil Defense ◽  
Base Stations ◽  
Infrared Range ◽  
High Electron ◽  
Radar Applications ◽  
Gan Hemts

Abstract HEMT (High Electron Mobility Transistor) are playing a key role for power and RF low noise applications. They are crucial components for the development of base stations in the telecommunications networks and for civil, defense and space radar applications. As well as the improvement of the MMIC performances, the localization of the defects and the failure analysis of these devices are very challenging. To face these challenges, we have developed a complete approach, without degrading the component, based on front side failure analysis by standard (Visible-NIR) and Infrared (range of wavelength: 3-5 µm) electroluminescence techniques. Its complementarities and efficiency have been demonstrated through two case studies.

Investigation of Dielectric Resonator Oscillator Using High-Electron Mobility Transistor at 26GHz for Space Applications

2021 ◽  
pp. 2250046
Author(s):  
Pinku Ranjan ◽  
Swati Khandare
Keyword(s):  
Phase Noise ◽  
Electron Mobility ◽  
Dielectric Resonator ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Design System ◽  
High Electron ◽  
Space Applications ◽  
High Electron Mobility ◽  
High Frequencies

An oscillator is a vital component as the energy source in microwave telecommunication system. Microwave oscillators designed using Gunn diode have poor DC to RF efficiency. IMPact Ionization Avalanche Transit-Time diode (IMPATT) oscillators have the drawback of poor noise performance. The transistorized oscillators have a limitation to the maximum oscillation frequency which means that they cannot be used for oscillators designed for high frequencies. To design negative series feedback Dielectric Resonator Oscillator (DRO), the resonant unit uses a dielectric resonator (DR) since it is small in size, light in weight, has high-Quality ([Formula: see text]) factor, better stability and also it is inexpensive. It has the benefits of low-phase noise, low cost, miniaturization, high stability, applicable for devices designed at high frequencies and had already been widely applied, so the research on microwave dielectric oscillator has also been one of the focus of today’s microwave integrated circuits. DRO is widely used in electronic warfare, missile, radar and communication systems. The DRO incorporates High-Electron Mobility Transistor (HEMT) as an active device since it offers higher power-added efficiency combined with excellent low-noise figures and performance. The entire circuit of DRO using HEMT at 26[Formula: see text]GHz is designed using Agilent Advanced Design System (ADS) software. In this, DRO different measurements of parameters are done such as output power which is typically [Formula: see text][Formula: see text]dBm for 26[Formula: see text]GHz DRO, phase noise at 10[Formula: see text]kHz offset for 26[Formula: see text]GHz DRO it is 80[Formula: see text]dBc/Hz. The frequency pushing and frequency pulling for 26[Formula: see text]GHz DRO its typical values are 30[Formula: see text]kHz/V and 1[Formula: see text]MHz, respectively.

scholarly journals Compact Cryogenic Receivers for the 1.3 to 43 GHz Range

1988 ◽  
Vol 129 ◽  
pp. 499-500
Author(s):  
S. Weinreb ◽  
R. Norrod ◽  
M. W. Pospieszalski
Keyword(s):  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Current Status ◽  
High Electron ◽  
Light Weight ◽  
Closed Cycle ◽  
High Electron Mobility ◽  
Dual Channel ◽  
Long Baseline ◽  
Very Long Baseline Array

A series of front-ends utilizing small closed-cycle refrigerators and very low-noise, high-electron-mobility transistor (HEMT) amplifiers have been developed for use in the Very Long Baseline Array (VLBA). The frequency bands, amplifier noise temperatures, expected system temperatures, and current status are shown in Table I. The receivers are designed to be light weight (∼ 55 pounds except for 105 pounds at 1.5 GHz) for ease of installation and maintenance, are easily remotely controlled and monitored, and provide dual-channel circular polarization capability. Detailed descriptions of some of the front-ends are given in VLBA technical reports.

A 60-GHz three-stage low noise amplifier using 0.15-μm gallium-arsenic pseudomorphic high-electron mobility transistor technology

2011 ◽  
Vol 54 (2) ◽  
pp. 329-332 ◽  
Author(s):  
Chih-Min Hu ◽  
Chung-Yu Hung ◽  
Chun-Hsueh Chu ◽  
Da-Chiang Chang ◽  
Ying-Zong Juang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Low Noise Amplifier ◽  
High Electron ◽  
60 Ghz ◽  
High Electron Mobility ◽  
Noise Amplifier

Composite-Channel Metamorphic High Electron Mobility Transistor for Low-Noise and High-Linearity Applications

2004 ◽  
Vol 43 (No. 7A) ◽  
pp. L871-L872 ◽  
Author(s):  
Edward Yi Chang ◽  
Yueh-Chin Lin ◽  
Guan-Ji Chen ◽  
Huang-Ming Lee ◽  
Guo-Wei Huang ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
High Electron ◽  
High Electron Mobility ◽  
Composite Channel ◽  
High Linearity
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