scholarly journals Plasma Etching Pre-treatment for a TEM Lamella Preparation of 3D NAND with High Aspect Ratio

2021 ◽  
Author(s):  
Yu-Chih Chen ◽  
Bing-Chang Li ◽  
Pei-Ling Hsu ◽  
Tsung-Yi Lin ◽  
I-An Chen ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Plasma Etching ◽  
High Aspect Ratio ◽  
Expected Number ◽  
Number Of Layers ◽  
High Etch Rate ◽  
Pre Treatment ◽  
Etching Parameters ◽  
Tem Lamella ◽  
Section Analysis

Abstract The 3D NAND sample with high aspect ratio (HAR) etched by plasma was investigated. By controlling the plasma etching parameters, a relatively high etch rate could be obtained. Moreover, with appropriately controlling the etch time, we could etch top region of HAR sample with expected number of layers, which could help us to completely analyze the high aspect ratio sample with TEM cross-section analysis, especially for the middle region of 3D NAND.

High Aspect Ratio Tilted Gratings Through Local Electric Field Modulation in Plasma Etching

2021 ◽  
Author(s):  
Zhitian Shi ◽  
Konstantins Jefimovs ◽  
Antonino La Magna ◽  
Marco Stampanoni ◽  
Lucia Romano
Keyword(s):  
Aspect Ratio ◽  
Electric Field ◽  
Plasma Etching ◽  
High Aspect Ratio ◽  
Local Electric Field ◽  
Field Modulation

Plasma etching of high aspect ratio features in SiO2 using Ar/C4F8/O2 mixtures: A computational investigation

2019 ◽  
Vol 37 (3) ◽  
pp. 031304 ◽  
Author(s):  
Shuo Huang ◽  
Chad Huard ◽  
Seungbo Shim ◽  
Sang Ki Nam ◽  
In-Cheol Song ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Plasma Etching ◽  
High Aspect Ratio ◽  
Computational Investigation

The Benefits of Process Parameter Ramping During The Plasma Etching of High Aspect Ratio Silicon Structures

1998 ◽  
Vol 546 ◽  
Author(s):  
J. Hopkins ◽  
H. Ashraf ◽  
J. K. Bhardwaj ◽  
A. M. Hynes ◽  
I. Johnston ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Plasma Etching ◽  
Etch Rate ◽  
Critical Dimension ◽  
Optical Devices ◽  
Aspect Ratios ◽  
Dimension Control ◽  
Silicon Structures ◽  
High Etch Rate ◽  
Product Specifications

AbstractIn the ongoing enhancement of MEMS applications, the STS Advanced Silicon Etch, (ASETM). process satisfies the demanding requirements of the industry. Typically, highly anisotropic. high aspect ratios profiles with fine CD (critical dimension) control are required. Selectivities to photoresist of 150:1 with Si etch rates of up to 10μm/min are demonstrated. Applications range from shallow etched optical devices to through wafer membrane etches. This paper details some of the fundamental trends of the ASETM process and goes on to discuss how the process has been enhanced to meet product specifications. Parameter ramping is a powerful technique used to achieve the often-conflicting requirements of high etch rate with good profile/CD control. The results are presented in this paper.

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