General electrical characterisation of Ag/TiO2/n-InP/Au Schottky Diode

Abstract A single power amplifier-duplexer device was submitted by a customer for analysis. The device was initially considered passing when tested against the production test. However, further electrical testing suggested that the device was stuck in a single power mode for a particular frequency band at cold temperatures only. This paper outlines the systematic isolation of a parasitic Schottky diode formed by a base contactcollector punch through process defect that pulled down the input of a NOR gate leading to the incorrect logic state. Note that this parasitic Schottky diode is parallel to the basecollector junction. It was observed that the logic failure only manifested at colder temperatures because the base contact only slightly diffused into the collector layer. Since the difference in the turn-on voltages between the base-collector junction and the parasitic Schottky diode increases with decreasing temperature, the effect of the parasitic diode is only noticeable at lower temperatures.

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Methodology for Analysis of Schottky Diode Failures

ISTFA 2010: Conference Proceedings from the 36th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2010p0449 ◽

2010 ◽

Author(s):

Bhanu P. Sood ◽

Michael Pecht ◽

John Miker ◽

Tom Wanek

Keyword(s):

Failure Mode ◽

Schottky Diode ◽

Failure Modes ◽

Schottky Diodes ◽

Failure Mechanisms ◽

Forward Voltage ◽

Fast Switching ◽

Voltage Drops ◽

The Common

Abstract Schottky diodes are semiconductor switching devices with low forward voltage drops and very fast switching speeds. This paper provides an overview of the common failure modes in Schottky diodes and corresponding failure mechanisms associated with each failure mode. Results of material level evaluation on diodes and packages as well as manufacturing and assembly processes are analyzed to identify a set of possible failure sites with associated failure modes, mechanisms, and causes. A case study is then presented to illustrate the application of a systematic FMMEA methodology to the analysis of a specific failure in a Schottky diode package.

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Pseudomorphic GaInP Schottky diode and MSM detector on InP

Electronics Letters ◽

10.1049/el:19900316 ◽

1990 ◽

Vol 26 (7) ◽

pp. 487 ◽

Cited By ~ 6

Author(s):

S. Loualiche ◽

A. le Corre ◽

A. Ginudi ◽

L. Henry ◽

C. Vaudry ◽

...

Keyword(s):

Schottky Diode

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Improvement effect of the MoO3 interface layer on the p-Si-based Schottky diode

Journal of Materials Science Materials in Electronics ◽

10.1007/s10854-021-05619-w ◽

2021 ◽

Vol 32 (7) ◽

pp. 9567-9573

Author(s):

Şadan Özden

Keyword(s):

Schottky Diode ◽

Interface Layer ◽

Improvement Effect

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Photo-responsive Schottky Diode Behavior of a Donor-Acceptor Co-crystal with Violet Blue Light Emission

CrystEngComm ◽

10.1039/d1ce00020a ◽

2021 ◽

Author(s):

Sanjay Kumar ◽

Soumen Singha ◽

Rajkumar Jana ◽

RITUPARNA MONDAL ◽

Partha Pratim Bag ◽

...

Keyword(s):

Crystal Structure ◽

Transport Property ◽

Schottky Diode ◽

Electronic Transport ◽

Supramolecular Structure ◽

Light Emission ◽

Electronic Transport Property ◽

Blue Light Emission ◽

Donor Acceptor ◽

Diode Behavior

Herein, we report the crystal structure, supramolecular structure, electronic transport property and optoelectronic behaviour of a co-crystal made of tetrabromoterephthalic acid (TBTA) and quinoxaline (QUIN) (1:1). The sample has been...

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