Effects of measurement temperature and metal thickness on Schottky diode characteristics

2021 ◽  
pp. 413125
Author(s):  
A.F. Özdemir ◽  
T. Göksu ◽  
N. Yıldırım ◽  
A. Turut
Author(s):  
E. I. Alessandrini ◽  
M. O. Aboelfotoh

Considerable interest has been generated in solid state reactions between thin films of near noble metals and silicon. These metals deposited on Si form numerous stable chemical compounds at low temperatures and have found applications as Schottky barrier contacts to silicon in VLSI devices. Since the very first phase that nucleates in contact with Si determines the barrier properties, the purpose of our study was to investigate the silicide formation of the near noble metals, Pd and Pt, at very thin thickness of the metal films on amorphous silicon.Films of Pd and Pt in the thickness range of 0.5nm to 20nm were made by room temperature evaporation on 40nm thick amorphous Si films, which were first deposited on 30nm thick amorphous Si3N4 membranes in a window configuration. The deposition rate was 0.1 to 0.5nm/sec and the pressure during deposition was 3 x 10 -7 Torr. The samples were annealed at temperatures in the range from 200° to 650°C in a furnace with helium purified by hot (950°C) Ti particles. Transmission electron microscopy and diffraction techniques were used to evaluate changes in structure and morphology of the phases formed as a function of metal thickness and annealing temperature.


Author(s):  
Rose Emergo ◽  
Steve Brockett ◽  
Pat Hamilton

Abstract A single power amplifier-duplexer device was submitted by a customer for analysis. The device was initially considered passing when tested against the production test. However, further electrical testing suggested that the device was stuck in a single power mode for a particular frequency band at cold temperatures only. This paper outlines the systematic isolation of a parasitic Schottky diode formed by a base contactcollector punch through process defect that pulled down the input of a NOR gate leading to the incorrect logic state. Note that this parasitic Schottky diode is parallel to the basecollector junction. It was observed that the logic failure only manifested at colder temperatures because the base contact only slightly diffused into the collector layer. Since the difference in the turn-on voltages between the base-collector junction and the parasitic Schottky diode increases with decreasing temperature, the effect of the parasitic diode is only noticeable at lower temperatures.


Author(s):  
Bhanu P. Sood ◽  
Michael Pecht ◽  
John Miker ◽  
Tom Wanek

Abstract Schottky diodes are semiconductor switching devices with low forward voltage drops and very fast switching speeds. This paper provides an overview of the common failure modes in Schottky diodes and corresponding failure mechanisms associated with each failure mode. Results of material level evaluation on diodes and packages as well as manufacturing and assembly processes are analyzed to identify a set of possible failure sites with associated failure modes, mechanisms, and causes. A case study is then presented to illustrate the application of a systematic FMMEA methodology to the analysis of a specific failure in a Schottky diode package.


Author(s):  
O. V. Sych

On the basis of the conducted research, a complex of scientific and technological methods has been developed for various technological processes (thermomechanical processing with accelerated cooling, quenching from rolling and separate furnace heating with high-temperature tempering). The developed method provides the formation of the structure of acceptable heterogeneity and anisotropy according to different morphological and crystallographic parameters throughout the thickness of rolled products up to 100 mm from low alloy steels with a yield strength of at least 315–460 MPa and up to 60 mm from economically alloyed steels with a yield strength of at least 500–750 MPa. The paper presents results of the industrial implementation of hot plastic deformation and heat treatment schemes for the production of cold rolled steel sheet with yield strength of at least 315–750 MPa for the Arctic. The structure of sheet metal thickness is given, providing guaranteed characteristics of strength, ductility, cold resistance, weldability and crack resistance.


1990 ◽  
Vol 26 (7) ◽  
pp. 487 ◽  
Author(s):  
S. Loualiche ◽  
A. le Corre ◽  
A. Ginudi ◽  
L. Henry ◽  
C. Vaudry ◽  
...  
Keyword(s):  

CrystEngComm ◽  
2021 ◽  
Author(s):  
Sanjay Kumar ◽  
Soumen Singha ◽  
Rajkumar Jana ◽  
RITUPARNA MONDAL ◽  
Partha Pratim Bag ◽  
...  

Herein, we report the crystal structure, supramolecular structure, electronic transport property and optoelectronic behaviour of a co-crystal made of tetrabromoterephthalic acid (TBTA) and quinoxaline (QUIN) (1:1). The sample has been...


2021 ◽  
Vol 118 (12) ◽  
pp. 122102
Author(s):  
Qinglong Yan ◽  
Hehe Gong ◽  
Jincheng Zhang ◽  
Jiandong Ye ◽  
Hong Zhou ◽  
...  

2021 ◽  
pp. 160394
Author(s):  
E.B. Yakimov ◽  
A.Y. Polyakov ◽  
I.V. Shchemerov ◽  
N.B. Smirnov ◽  
A.A. Vasilev ◽  
...  
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