METHOD FOR MANUFACTURING THIN FILMS OF CUBI2O4 FOR PHOTOELECTROCHEMICAL APPLICATIONS

A method has been developed for producing thin semiconductor films of a complex copper-bismuth system (CuBi2O4) with reduced roughness and increased photoactivity. The application process is carried out under standard laboratory conditions from aqueous solutions of salts, takes advantage of centrifugation to evenly distribute the coating over the surface, is characterized by low material consumption, and allows the thin nanocrystalline layers formation with a given thickness. Polyethylene glycol (PEG) is used to improve the spraying of solution droplets over the entire surface of the CuBi2O4 film, which allows the dense uniform films deposition. Scanning electron and atomic force microscopy data demonstrate the ordering of the growth of CuBi2O4 particles (size ≈200 nm) and a 1.5-fold decrease in the roughness of the relief when polyethylene glycol is added to the solution. Micrographs show the growth of uniformly sized rounded crystallites. In a comparative analysis of the XRD diagram of the samples, an increase in the number and intensity of peaks corresponding to the crystalline phase of Kusachiite (CuBi2O4) with the introduction of PEG into the initial solution is observed. Based on the photoelectrochemical measurements results, it was found that the addition of polyethylene glycol to the electrolyte helps to increase the photoactivity of the samples by 2 times. The obtained thin polycrystalline CuBi2O4 films are promising for use in photoelectrochemical converters. Keywords: Solar energy material, spin coating, CuBi2O4, polyethylene glycol.

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Фотофизические свойства тонких пленок перилена, модифицированного функциональными группами диангидрида и диимида тетракарбоновой кислоты

Физика твердого тела ◽

10.21883/ftt.2021.09.51281.091 ◽

2021 ◽

Vol 63 (9) ◽

pp. 1437

Author(s):

А.С. Комолов ◽

Э.Ф. Лазнева ◽

Е.В. Жижин ◽

Э.К. Алиджанов ◽

Ю.Д. Лантух ◽

...

Keyword(s):

Charge Carrier ◽

Band Gap ◽

Charge Carrier Mobility ◽

Dark Conductivity ◽

Localized States ◽

Semiconductor Films ◽

Force Microscopy ◽

Atomic Force ◽

Before And After ◽

Carrier Traps

The morphology of organic semiconductor films of perylenetetracarboxylic acid dianhydride (PTCDA) and perylenetetracarboxylic acid dibenzyl-diimide (N, N`-DBPTCDI) formed by thermal vacuum deposition was studied by atomic force microscopy. It was shown that annealing of films at 420 K leads to rearrangement of their structure and crystallization. The optical absorption spectra of the films under study were used to estimate the optical band gap. The temperature dependence of the dark conductivity of PTCDA and N, N-DBPTCDI films before and after annealing (Т = 420 K) was established. The values of the activation energy of charge carrier traps are determined. The computer simulation of the density of localized states in the band gap of the films studied was carried out using the photoconductivity spectra in the constant photocurrent mode. Model photovoltaic cells based on PTCDA / СuPc and N, N-DBPTCDI / СuPc structures were formed. The kinetics of decay of the interfacial photo-voltage of the cells prepared was measured using pulsed light as an excitation source. On the basis of the performed measurements, the charge carrier mobility values in the investigated semiconductor materials were estimated.

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Deconvolution of atomic force microscopy data for cellular and molecular imaging

IEEE Signal Processing Magazine ◽

10.1109/msp.2006.1628880 ◽

2006 ◽

Vol 23 (3) ◽

pp. 73-83 ◽

Cited By ~ 4

Author(s):

L. Udpa ◽

V.M. Ayres ◽

Yuan Fan ◽

Qian Chen ◽

S.A. Kumar

Keyword(s):

Atomic Force Microscopy ◽

Molecular Imaging ◽

Atomic Force Microscopy Data ◽

Force Microscopy ◽

Atomic Force ◽

Microscopy Data

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Use of molecular dynamics simulation in interpreting the atomic force microscopy data

BIOPHYSICS ◽

10.1134/s0006350910030048 ◽

2010 ◽

Vol 55 (3) ◽

pp. 370-376 ◽

Cited By ~ 1

Author(s):

M. G. Godsie ◽

A. P. Tolstova ◽

I. V. Oferkin

Keyword(s):

Molecular Dynamics ◽

Atomic Force Microscopy ◽

Molecular Dynamics Simulation ◽

Atomic Force Microscopy Data ◽

Dynamics Simulation ◽

Force Microscopy ◽

Atomic Force ◽

Microscopy Data

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Large-scale analysis of high-speed atomic force microscopy data sets using adaptive image processing

Beilstein Journal of Nanotechnology ◽

10.3762/bjnano.3.84 ◽

2012 ◽

Vol 3 ◽

pp. 747-758 ◽

Cited By ~ 8

Author(s):

Blake W Erickson ◽

Séverine Coquoz ◽

Jonathan D Adams ◽

Daniel J Burns ◽

Georg E Fantner

Keyword(s):

High Speed ◽

Large Scale ◽

Data Sets ◽

Force Microscopy ◽

Topographic Features ◽

Atomic Force ◽

Large Scale Analysis ◽

Adaptive Image Processing ◽

True Representation ◽

Microscopy Data

Modern high-speed atomic force microscopes generate significant quantities of data in a short amount of time. Each image in the sequence has to be processed quickly and accurately in order to obtain a true representation of the sample and its changes over time. This paper presents an automated, adaptive algorithm for the required processing of AFM images. The algorithm adaptively corrects for both common one-dimensional distortions as well as the most common two-dimensional distortions. This method uses an iterative thresholded processing algorithm for rapid and accurate separation of background and surface topography. This separation prevents artificial bias from topographic features and ensures the best possible coherence between the different images in a sequence. This method is equally applicable to all channels of AFM data, and can process images in seconds.

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