scholarly journals Various Methods for Measurement of Resistive Leakage Current of Metal Oxide Surge Arrester

2021 ◽  
pp. 81-89
Author(s):  
Prof. Samruddhi Shaha ◽  
Yaseen Khan Anwar Khan Dakhani
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Partial Discharges ◽  
Measuring Instrument ◽  
Means Of Measurement ◽  
Uneven Heating

Metal Oxide Surge Arrester (MOSA) does not require any ordinary maintenance. But MOSA is get affected from ageing due to the effect of discharging impulse currents, uneven heating and internal partial discharges. A leading cause of deterioration is ingress of moisture. The degradation of MOSA also correlated with the ageing level of the arrester. This is called degradation under surge. The ageing level with the degradation of MO surge arrester or the leakage current of the surge arrester is related to each other. The leakage current is directly proportional to the ageing level. If the ageing level is raise, the leakage current also will increase. So, various methods for determination of the condition of ZnO surge arrester by means of measurement of the arrester leakage current are discussed. A MSCM method, which is based on leakage current of the surge arrester presented. The measuring instrument Leakage Current Monitor is also discussed.

METHOD FOR ESTIMATING ERRORS IN MEASURING INSTRUMENTS BY THE SPACE CATALOGUE ORBITS

2018 ◽  
pp. 76-84
Author(s):  
K. V. Sorokin ◽  
E. A. Sunarchina
Keyword(s):  
Dynamic Model ◽  
New Method ◽  
Measuring Instruments ◽  
Measuring Instrument ◽  
Software Complex

Improvement of orbits precision is one of the most important tasks of space surveillance catalogue maintenance. The solution of this problem is directly related to an adequate consideration of the errors of the coordinate information from the measuring instruments. The article consideresd a new method for estimating the precision of measuring instruments on the catalog orbits. To carry out such analysis, in PJSC «VIMPEL» special technological program was created. Main results of a study of radar errors with orbits of space surveillance catalogue was presented. Also, the results were compared with data of measuring instrument's calibration software complex. This software complex provides determination of satellite's position with errors less than 10 m. A new dynamic model of measuring instrument errors is proposed.

Optimized Al-doped TiO2 gate insulator for metal-oxide-semiconductor capacitor on Ge substrate

2021 ◽  
Author(s):  
Dong Gun Kim ◽  
Cheol Hyun An ◽  
Sanghyeon Kim ◽  
Dae Seon Kwon ◽  
Junil Lim ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Tio2 Film ◽  
Single Layer ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
High K ◽  
Metal Oxide Semiconductor Capacitor

Atomic layer deposited TiO2- and Al2O3-based high-k gate insulator (GI) were examined for the Ge-based metal-oxide-semiconductor capacitor application. The single-layer TiO2 film showed a too high leakage current to be...

Influence of Epi-Layer Growth Pits on SiC Device Characteristics

2015 ◽  
Vol 821-823 ◽  
pp. 177-180 ◽  
Author(s):  
Chiaki Kudou ◽  
Hirokuni Asamizu ◽  
Kentaro Tamura ◽  
Johji Nishio ◽  
Keiko Masumoto ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Dielectric Breakdown ◽  
Layer Growth ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Constant Current ◽  
Schottky Barrier Diodes ◽  
Current Time

Homoepitaxial layers with different growth pit density were grown on 4H-SiC Si-face substrates by changing C/Si ratio, and the influence of the growth pit density on Schottky barrier diodes and metal-oxide-semiconductor capacitors were investigated. Even though there were many growth pits on the epi-layer, growth pit density did not affect the leakage current of Schottky barrier diodes and lifetime of constant current time dependent dielectric breakdown. By analyzing the growth pit shape, the aspect ratio of the growth pit was considered to be the key factor to the leakage current of the Schottky barrier diodes and the lifetime of metal-oxide-semiconductor capacitors.

Research on Compressed Sensing Matrix Based on Data Compressing of Insulator Leakage Current

2013 ◽  
Vol 475-476 ◽  
pp. 451-454
Author(s):  
Xue Ming Zhai ◽  
Xiao Bo You ◽  
Ruo Chen Li ◽  
Yu Jia Zhai ◽  
De Wen Wang
Keyword(s):  
Compressed Sensing ◽  
Data Compression ◽  
Leakage Current ◽  
Sparse Matrix ◽  
Circulant Matrix ◽  
Measurement Matrix ◽  
Sensing Matrix ◽  
Significant Step ◽  
On Line

Insulator fault may lead to the accident of power network,thus the on-line monitoring of insulator is very significant. Low rates wireless network is used for data transmission of leakage current. Making data compression and reconstruction of leakage current with the compressed sensing theory can achieve pretty good results. Determination of measurement matrix is the significant step for realizing the compressed sensing theory. This paper compares multiple measurement matrix of their effect via experiments, putting forward to make data compression and reconstruction of leakage current using Toeplitz matrix, circulant matrix and sparse matrix as measurement matrix, of which the reconstitution effect is almost the same as classical measurement matrix and depletes computational complexity and workload.

Determination of the Stress Distribution at the Interface Metal-Oxide: Numerical and Theoretical Considerations

2005 ◽  
Vol 237-240 ◽  
pp. 145-150 ◽  
Author(s):  
Sébastien Garruchet ◽  
A. Hasnaoui ◽  
Olivier Politano ◽  
Tony Montesin ◽  
J. Marcos Salazar ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Stress Distribution ◽  
Oxide Film ◽  
Metal Oxide ◽  
Reaction Kinetics ◽  
Analytical Model ◽  
Equilibrium Thermodynamics ◽  
Theoretical Considerations ◽  
Molecular Dynamics Results

In this paper we give a brief presentation of the approaches we have recently developed on the oxidation of metals. Firstly, we present an analytical model based on non-equilibrium thermodynamics to describe the reaction kinetics present during the oxidation of a metal. Secondly, we present the molecular dynamics results obtained with a code specially tailored to study the oxidation and growth of an oxide film of aluminium. Our simulations present an excellent agreement with experimental results.

Accurate Modeling Methodology of Laterally Diffused Metal-Oxide Semiconductor Leakage Current for Electro-Static Discharge Protection Circuit Design

2021 ◽  
Vol 21 (8) ◽  
pp. 4230-4234
Author(s):  
Jun Hyeok Kim ◽  
Su Min Lee ◽  
Chan Ho Park
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Measurement Data ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Modeling Methodology ◽  
Trap Assisted Tunneling ◽  
Protection Circuit ◽  
Current Characteristics ◽  
Static Discharge

A modeling method using juncap2 physical compact model with SRH (Shockley-Read-Hall), TAT (Trap-Assisted-Tunneling), BBT (Band-to-Band Tunneling) effects is presented for the leakage current in a laterally diffused metal-oxide semiconductor (LDMOS). The juncap2 model is successfully combined with BSIM4 model and it is validated with measurement data. The model accurately predicts the leakage current characteristics for the entire bias region and temperature.

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