scholarly journals Synthesis and Analysis of Zirconium Titanate Thin Films by using Sol-Gel Method

2021 ◽  
Vol 11 (5) ◽  
pp. 12761-12768
Keyword(s):  
Zirconium Oxide ◽  
Bond Formation ◽  
Sol Gel ◽  
Gate Oxide ◽  
Future Generation ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Ftir Analysis ◽  
High K ◽  
Lower Spin

Titanium-doped zirconium oxide (mixed high-k) has been used as the gate oxide layer for the future generation metal oxide semiconductor devices. This mixed high-k layer was prepared by using Sol-Gel based spin-coated method. This mixed high-k layer’s chemical, structural, and initial electrical properties are investigated thoroughly. It is clearly confirmed that the suitable chemical composition and bond formation of the proposed mixed high-k layer from EDAX and FTIR analysis observations. The XRD spectra strengthened the presence of ZrTiO2. The measured dielectric constant of the proposed mixed high-k layer from the extracted C-V plots has been varying from 29.1 to 37.6 with respect to spin coating from 4000 to 6000 rpm. With lower spin rates, the leakage current is less.

Optimized Al-doped TiO2 gate insulator for metal-oxide-semiconductor capacitor on Ge substrate

2021 ◽  
Author(s):  
Dong Gun Kim ◽  
Cheol Hyun An ◽  
Sanghyeon Kim ◽  
Dae Seon Kwon ◽  
Junil Lim ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Leakage Current ◽  
Tio2 Film ◽  
Single Layer ◽  
Atomic Layer ◽  
Metal Oxide Semiconductor ◽  
Gate Insulator ◽  
Oxide Semiconductor ◽  
High K ◽  
Metal Oxide Semiconductor Capacitor

Atomic layer deposited TiO2- and Al2O3-based high-k gate insulator (GI) were examined for the Ge-based metal-oxide-semiconductor capacitor application. The single-layer TiO2 film showed a too high leakage current to be...

scholarly journals Design and Analysis of Logic Gates using GaN based Double Gate MOSFET (DG-MOS)

2018 ◽  
Vol 17 (1) ◽  
Author(s):  
Md Ibnul Bin Kader Arnub ◽  
M Tanseer Ali
Keyword(s):  
Field Effect Transistors ◽  
Logic Gates ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Double Gate ◽  
Channel One ◽  
Turn On ◽  
Double Gate Mosfet ◽  
Different Types

The double gate MOSFET, where two gates are fabricated along the length of the channel one after another. Design of logic gates is one of the most eminent application of Double Gate MOSFET. Gallium nitride (GaN) based metal-oxide semiconductor field-effect transistors (MOSFETs) are shown to be promising for digital logic applications. This paper describes the design and analysis of different types of logic gates using GaN based DG-MOSFET. The gate length (LG) is kept constant at 10.6 nm. The gate voltage varies from 0 to 1 V for the device switching from turn OFF to turn ON-state. For the device with HfO2 as gate oxide, the ON-state current (ION) and OFF-state current (IOFF) are found 8.11×10-3 and 6.38605×10-9A/μm respectively. The leakage current is low for the device with HfO2 as compared to that for the device with ZrO2. The subthreshold swing (SS) is 68.7408 mV/dec for the device with HfO2.

Octahedral-Structured Gigantic Precipitates as the Origin of Gate-Oxide Defects in Metal-Oxide-Semiconductor Large-Scale-Integrated Circuits

1996 ◽  
Vol 35 (Part 1, No. 2B) ◽  
pp. 812-817 ◽  
Author(s):  
Manabu Itsumi ◽  
Hideo Akiya ◽  
Takemi Ueki ◽  
Masato Tomita ◽  
Masataka Yamawaki
Keyword(s):  
Integrated Circuits ◽  
Metal Oxide ◽  
Large Scale ◽  
Gate Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Oxide Defects
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