scholarly journals Nucleation/Growth and Optical Proprieties of Co-doped ZnO Electrodeposited on ITO Substrate

2021 ◽  
Vol 12 (5) ◽  
pp. 6776-6787

A Co-doped ZnO layer was prepared by electrodeposition method on indium doped tin oxide (ITO) substrate using a cathodic reduction from nitrate medium with different doping percentages of cobalt. The bath temperature was controlled at 70 °C. The films were cathodically electrodeposited in a bath containing 5 mM Zn(NO3)2. 6H2O, while the source of Co is Co(NO3)2.6H2O where 0.1M KNO3 was used as supporting electrolyte. The nucleation and growth mechanism of Co-doped ZnO nuclei have been studied by cyclic voltammetry and chronoamperometry. The cyclic voltammetry shows that the electrodeposition of ZnO and Co-doped ZnO at a negative potential around -1.0 V versus saturated calomel electrode (SCE) is a quasi-reversible reaction controlled by the diffusion process. Comparing current transients curves obtained by the chronoamperometric method with the theoretical curves of current density j versus t ½ allows us to say that the nucleation is 3D instantaneous, as shown in SEM analysis. The presence of Co does not modify the nucleation and growth mechanism. The XRD patterns show that the substitution of zinc by cobalt does not change the würtzite crystal structure, but the crystallite size decreases with the cobalt percentage. The transmittance spectra indicate that the Co-doped ZnO films are transparent in the visible range. The optical gap increases with the doping percentage of cobalt.

2013 ◽  
Vol 680 ◽  
pp. 75-80
Author(s):  
Xiao Li Wu ◽  
Hui Wang ◽  
Yu Zhen Yuan

Zr-Ga co-doped ZnO transparent conductive films were prepared on glass substrates by DC magnetron sputtering at room temperature. The influence of sputtering power on the structural, electrical and optical properties of Zr-Ga co-doped ZnO films was investgated by X-ray diffraction, scanning electron microscopy (SEM), digital four-point probe and optical transmission spectroscopy. The lowest resistivity of the Zr-Ga co-doped ZnO films is 3.02×10-4Ω﹒cm and the average transmittance of the films is over 90% in the visible range. The obtained optical band gap of these films is much larger than of pure ZnO (3.34 eV).


1989 ◽  
Vol 4 (4) ◽  
pp. 795-801 ◽  
Author(s):  
C. J. Jou ◽  
J. Washburn

A nucleation-and-growth mechanism for the twin formation in YBa2Cu3O7–δ superconductors based on the oxygen uptake rate curve and published transmission electron microscopic observations is proposed together with an oxygen-depleted twin boundary model. The difficulty of reaching stoichiometric YBa2Cu3O7 is explained.


2016 ◽  
Vol 33 (4) ◽  
pp. 270-275 ◽  
Author(s):  
J. Yang ◽  
J. Huang ◽  
Y. X. Lu ◽  
H. H. Ji ◽  
L. Zhang ◽  
...  

2006 ◽  
Vol 296 (2) ◽  
pp. 135-140 ◽  
Author(s):  
Xue-Chao Liu ◽  
Er-Wei Shi ◽  
Zhi-Zhan Chen ◽  
Hua-Wei Zhang ◽  
Li-Xin Song ◽  
...  

2016 ◽  
Vol 53 ◽  
pp. 84-88 ◽  
Author(s):  
Jin Yang ◽  
Jian Huang ◽  
Huanhuan Ji ◽  
Ke Tang ◽  
Lei Zhang ◽  
...  

Plasmonics ◽  
2021 ◽  
Author(s):  
Soumya Kannoth ◽  
Packia Selvam Irulappan ◽  
Sandip Dhara ◽  
Sankara Narayanan Potty

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