Electrodeposition of Cu2O thin Film Onto Copper Substrate by Linear Sweep Voltammetry at Low Duration: Effect of Bath pH

Copper (II) oxide (Cu2O) has attracted much interest as a semiconductor material for solar cell applications. Here we report the synthesis of Cu2O, thin films through an economical and simple electrodeposition method at low duration (10 min) by linear sweep voltammetry (LSV) method at 50 °C bath temperature, with the use of citric acid as a complexing agent. The influence of pH value (pH = 9.5, 10.5, 11.5, and 12.5) on structural, morphological, and optical properties of the synthesized Cu2O thin films onto copper substrate was investigated. The synthesized Cu2O thin films have been characterized using various techniques like X-ray diffraction (XRD), Raman spectroscopy, Scanning Electron Microscopy (SEM-EDX), UV-vis spectrophotometry. The X-ray diffraction showed that the deposited thin films at pH= 9.5, 10.5, 11.5 matched well with the cubic (Pn-3m) structure and showed an improvement of the crystallinity near the value pH=10.5. Raman spectroscopy confirms the cubic structure of the synthesized thin film. Thin films show a high absorption coefficient in the visible spectra, and the calculated band gap energy value is near 1.8 eV.

Download Full-text

The Structural Characteristics of CIS Thin Films Prepared by Electro-Deposited Method

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.818.88 ◽

2013 ◽

Vol 818 ◽

pp. 88-91

Author(s):

Kun Liu ◽

Ji Sheng Yang ◽

Rui Li ◽

Wei Peng ◽

Shi Pan

Keyword(s):

Thin Film ◽

Thin Films ◽

Raman Spectroscopy ◽

Raman Spectrum ◽

Structural Characteristics ◽

X Ray Diffraction ◽

Electro Deposition ◽

X Ray ◽

Micro Raman Spectroscopy ◽

Deposition Technology

The properties of the absorber layer of solar cell CuInSe2(CIS) thin film made by electro-depostied method were researched in this article. Different concentration of reactant and voltage was applied to prepare the CIS film. The micro-Raman spectroscopy and X-ray diffraction (XRD) of CIS film was carried out. A correlation between the linewidth A1 mode of Raman spectrum and the XRD line and the voltage of electro-deposition technology was found.

Download Full-text

Palladium Nanowire Thin Films via Template Growth

MRS Proceedings ◽

10.1557/proc-775-p4.7 ◽

2003 ◽

Vol 775 ◽

Author(s):

Donghai Wang ◽

David T. Johnson ◽

Byron F. McCaughey ◽

J. Eric Hampsey ◽

Jibao He ◽

...

Keyword(s):

Thin Film ◽

Electron Microscopy ◽

Thin Films ◽

X Ray Diffraction ◽

X Ray ◽

Transmission Electron ◽

Conductive Substrate ◽

Palladium Nanowires ◽

Efficient Route ◽

Silica Thin Film

AbstractPalladium nanowires have been electrodeposited into mesoporous silica thin film templates. Palladium continually grows and fills silica mesopores starting from a bottom conductive substrate, providing a ready and efficient route to fabricate a macroscopic palladium nanowire thin films for potentially use in fuel cells, electrodes, sensors, and other applications. X-ray diffraction (XRD) and transmission electron microscopy (TEM) indicate it is possible to create different nanowire morphology such as bundles and swirling mesostructure based on the template pore structure.

Download Full-text

Al1-x ScxN Thin Film Structures for Pyroelectric Sensing Applications

MRS Advances ◽

10.1557/adv.2016.510 ◽

2016 ◽

Vol 1 (39) ◽

pp. 2711-2716 ◽

Cited By ~ 2

Author(s):

V. Vasilyev ◽

J. Cetnar ◽

B. Claflin ◽

G. Grzybowski ◽

K. Leedy ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Pyroelectric Coefficient ◽

X Ray Diffraction ◽

Ir Detectors ◽

Pyroelectric Properties ◽

X Ray ◽

Sensing Applications ◽

Pyroelectric Material ◽

Deposited Films

ABSTRACTAlN thin film structures have many useful and practical piezoelectric and pyroelectric properties. The potential enhancement of the AlN piezo- and pyroelectric constants allows it to compete with more commonly used materials. For example, combination of AlN with ScN leads to new structural, electronic, and mechanical characteristics, which have been reported to substantially enhance the piezoelectric coefficients in solid-solution AlN-ScN compounds, compared to a pure AlN-phase material.In our work, we demonstrate that an analogous alloying approach results in considerable enhancement of the pyroelectric properties of AlN - ScN composites. Thin films of ScN, AlN and Al1-x ScxN (x = 0 – 1.0) were deposited on silicon (004) substrates using dual reactive sputtering in Ar/N2 atmosphere from Sc and Al targets. The deposited films were studied and compared using x-ray diffraction, XPS, SEM, and pyroelectric characterization. An up to 25% enhancement was observed in the pyroelectric coefficient (Pc = 0.9 µC /m2K) for Sc1-xAlxN thin films structures in comparison to pure AlN thin films (Pc = 0.71 µC/m2K). The obtained results suggest that Al1-x ScxN films could be a promising novel pyroelectric material and might be suitable for use in uncooled IR detectors.

Download Full-text

Crystallization of Zn-rich and P-rich amorphous Zn3P2 thin films

Canadian Journal of Physics ◽

10.1139/p88-060 ◽

1988 ◽

Vol 66 (5) ◽

pp. 373-375 ◽

Cited By ~ 4

Author(s):

C. J. Arsenault ◽

D. E. Brodie

Keyword(s):

Thin Film ◽

Thin Films ◽

Activation Energy ◽

Electrical Properties ◽

Structural Properties ◽

Crystallization Process ◽

X Ray Diffraction ◽

Electrical Measurements ◽

Conductivity Activation Energy ◽

X Ray

Zn-rich and P-rich amorphous Zn3P2 thin films were prepared by co-evaporation of the excess element during the normal Zn3P2 deposition. X-ray diffraction techniques were used to investigate the structural properties and the crystallization process. Agglomeration of the excess element within the as-made amorphous Zn3P2 thin film accounted for the structural properties observed after annealing the sample. Electrical measurements showed that excess Zn reduces the conductivity activation energy and increases the conductivity, while excess P up to 15 at.% does not alter the electrical properties significantly.

Download Full-text

Synthesis of CaWO4:(Eu3+,Tb3+) Thin Films by a Two-Step Method at Room Temperature

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.710.170 ◽

2013 ◽

Vol 710 ◽

pp. 170-173

Author(s):

Lian Ping Chen ◽

Yuan Hong Gao

Keyword(s):

Thin Film ◽

Thin Films ◽

Phase Composition ◽

Room Temperature ◽

Electrochemical Techniques ◽

Luminescent Properties ◽

X Ray Diffraction ◽

Step Method ◽

X Ray ◽

Rare Earth Doped

It is hardly possible to obtain rare earth doped CaWO4thin films directly through electrochemical techniques. A two-step method has been proposed to synthesize CaWO4:(Eu3+,Tb3+) thin films at room temperature. X-ray diffraction, energy dispersive X-ray analysis, spectrophotometer were used to characterize their phase, composition and luminescent properties. Results reveal that (Eu3+,Tb3+)-doped CaWO4films have a tetragonal phase. When the ratio of n (Eu)/n (Tb) in the solution is up to 3:1, CaWO4:(Eu3+,Tb3+) thin film will be enriched with Tb element; on the contrary, when the ratio in the solution is lower than 1:4, CaWO4:(Eu3+,Tb3+) thin film will be enriched with Eu element. Under the excitation of 242 nm, sharp emission peaks at 612, 543, 489 and 589 nm have been observed for CaWO4:(Eu3+,Tb3+) thin films.

Download Full-text

Combinatorial (Ba,Sr)TiO3 thin film growth: X-ray diffraction and Raman spectroscopy

Journal of Applied Physics ◽

10.1063/1.3190478 ◽

2009 ◽

Vol 106 (3) ◽

pp. 034108 ◽

Cited By ~ 12

Author(s):

H. Bouyanfif ◽

J. Wolfman ◽

M. El Marssi ◽

Y. Yuzyuk ◽

R. Bodeux ◽

...

Keyword(s):

Thin Film ◽

Raman Spectroscopy ◽

Film Growth ◽

Thin Film Growth ◽

Tio3 Thin Film ◽

X Ray Diffraction ◽

X Ray

Download Full-text

Synthesis and Characterizations of Strontium Substituted Hydroxyapatite Thin Films

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.93-94.231 ◽

2010 ◽

Vol 93-94 ◽

pp. 231-234

Author(s):

B. Hongthong ◽

Satreerat K. Hodak ◽

Sukkaneste Tungasmita

Keyword(s):

Thin Film ◽

Thin Films ◽

Chemical Composition ◽

Spin Coating ◽

Phase Structure ◽

Sol Gel ◽

Cross Linking ◽

X Ray Diffraction ◽

X Ray ◽

Sol Gel Process

Strontium substituted hydroxyapatite(SrHAp) were fabricated both in the form of powder as reference and thin film by using inorganic precursor reaction. The sol-gel process has been used for the deposition of SrHAp layer on stainless steal 316L substrate by spin coating technique, after that the films were annealed in air at various temperatures. The chemical composition of SrHAp is represented (SrxCa1-x)5(PO4)3OH, where x is equal to 0, 0.5 and 1.0. Investigations of the phase structure of SrHAp were carried out by using X-ray diffraction technique (XRD). The results showed that strontium is incorporated into hydroxyapatite where its substitution for calcium increases in the lattice parameters, and Sr3(PO4)2 can be detected at 900°C. The SEM micrographs showed that SrHAp films exhibited porous structure before develop to a cross-linking structure.

Download Full-text

Phase characterisation of TiO/sub 2/ thin films using micro-Raman spectroscopy and glancing angle X-ray diffraction

2002 Conference on Optoelectronic and Microelectronic Materials and Devices. COMMAD 2002. Proceedings (Cat. No.02EX601) ◽

10.1109/commad.2002.1237222 ◽

2005 ◽

Cited By ~ 1

Author(s):

J. Hugmann ◽

B.S. Richards ◽

A. Crosky

Keyword(s):

Thin Films ◽

Raman Spectroscopy ◽

X Ray Diffraction ◽

X Ray ◽

Micro Raman Spectroscopy ◽

Glancing Angle

Download Full-text

Chemical Bath Deposition of Lead Sulphide (PbS) Thin Film and their Characterization

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.209.111 ◽

2013 ◽

Vol 209 ◽

pp. 111-115 ◽

Cited By ~ 6

Author(s):

Sandip V. Bhatt ◽

M.P. Deshpande ◽

Bindiya H. Soni ◽

Nitya Garg ◽

Sunil H. Chaki

Keyword(s):

Thin Film ◽

Thin Films ◽

Raman Spectroscopy ◽

Thin Film Deposition ◽

Film Deposition ◽

Excitation Wavelength ◽

Face Centered Cubic ◽

Phonon Modes ◽

Lead Sulphide ◽

X Ray

Thin film deposition of PbS is conveniently carried out by chemical reactions of lead acetate with thiourea at room temperature. Energy dispersive analysis of X-ray (EDAX), X-ray diffraction (XRD), selected area electron diffraction patterns (SAED), UV-Vis-NIR spectrophotometer, Scanning Electron Microscopy (SEM), Atomic force microscopy (AFM), Photoluminescence (PL) and Raman spectroscopy techniques are used for characterizing thin films. EDAX spectra shows that no impurity is present and XRD pattern indicates face centered cubic structure of PbS thin films. The average crystallite size obtained using XRD is about 15nm calculated using Scherrer’s formula and that determined from Hall-Williamson plot was found to be 18nm. SAED patterns indicate that the deposited PbS thin films are polycrystalline in nature. Blue shift due to quantum confinement was seen from the UV-Vis-NIR absorption spectra of thin film in comparison with bulk PbS. The Photoluminescence spectra obtained for thin film with different excitation sources shows sharp emission peaks at 395nm and its intensity of photoluminescence increases with increasing the excitation wavelength. Raman spectroscopy of deposited thin film was used to study the optical phonon modes at an excitation wavelength of 488nm using (Ar+) laser beam.

Download Full-text