The Effect of Plant Genotype, Growth Stage, and Mycosphaerella graminicola Strains on the Efficiency and Durability of Wheat-Induced Resistance by Paenibacillus sp. Strain B2

Some information on the size and density of voids that develop in several high purity metals and alloys during irradiation with neutrons at elevated temperatures has been reported as a function of irradiation parameters. An area of particular interest is the nucleation and early growth stage of voids. It is the purpose of this paper to describe the microstructure in high purity nickel after irradiation to a very low but constant neutron exposure at three different temperatures.Annealed specimens of 99-997% pure nickel in the form of foils 75μ thick were irradiated in a capsule to a total fluence of 2.2 × 1019 n/cm2 (E > 1.0 MeV). The capsule consisted of three temperature zones maintained by heaters and monitored by thermocouples at 350, 400, and 450°C, respectively. The temperature was automatically dropped to 60°C while the reactor was down.

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On the Inheritance of Induced Resistance to Toxic Concentrations of Sulfur Acid of Copper by Subsequent Cell Generations of Dunaliella viridis Teodoresco

International Journal on Algae ◽

10.1615/interjalgae.v20.i4.20 ◽

2018 ◽

Vol 20 (4) ◽

pp. 339-358

Author(s):

A. I. Bozhkov ◽

A. V. Goltvyanskiy ◽

M. K. Kovaleva ◽

N. G. Menzyanova

Keyword(s):

Induced Resistance ◽

Dunaliella Viridis ◽

Toxic Concentrations

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Efficient and Effective Failure Analysis of Low-Resistive Defect in Logic Device Using Layout-aware and Volume Diagnosis

10.31399/asm.cp.istfa2018p0133 ◽

2018 ◽

Author(s):

Ho Seok Song ◽

Eun Ji Park ◽

Tae Hwan Kim ◽

Dong Hae Kang ◽

Jong Taek Hong ◽

...

Keyword(s):

Failure Analysis ◽

Induced Resistance ◽

Logic Device ◽

Electrical Isolation ◽

Turn Around Time

Abstract Efficient and effective failure analysis (FA) of low-resistive defect was studied by using layout-aware and volume diagnosis. Small or marginal defect is one of the most difficult defectivities to identify during FA effort, especially if defect-induced resistance is not as high as the electrical isolation can detect. Here, we used new analysis methodologies, particularly using layout-aware and volume diagnosis, and prioritizing patterns in terms of a defective risk for following FA. The actual FA work verified that new analysis methodologies successfully identified low-resistive defect of Back-End-of-Line (BEOL) which was not detected by a conventional way and efficiently reduced the turn-around time (TAT) of physical failure analysis (PFA) by 57%, prompting fast feedback to fab.

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Laser Failure Isolation Techniques Demonstrated On Test Structures

ISTFA 2008: Conference Proceedings from the 34th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2008p0354 ◽

2008 ◽

Author(s):

Frank S. Arnold

Keyword(s):

Integrated Circuits ◽

Laser Beam ◽

Case Studies ◽

Induced Resistance ◽

Simple Test ◽

Resistance Change ◽

Cross Sectional ◽

Beam Focusing ◽

Isolation Techniques ◽

Heating Effects

Abstract To be better prepared to use laser based failure isolation techniques on field failures of complex integrated circuits, simple test structures without any failures can be used to study Optical Beam Induced Resistance Change (OBIRCH) results. In this article, four case studies are presented on the following test structures: metal strap, contact string, VIA string, and comb test structure. Several experiments were done to investigate why an OBIRCH image was seen in certain areas of a VIA string and not in others. One experiment showed the OBRICH variation was not related to the cooling and heating effects of the topology, or laser beam focusing. A 4 point probe resistance measurement and cross-sectional views correlated with the OBIRCH results and proved OBIRCH was able to detect a variation in VIA fabrication.

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