Efficient and Effective Failure Analysis of Low-Resistive Defect in Logic Device Using Layout-aware and Volume Diagnosis

2018 ◽  
Author(s):  
Ho Seok Song ◽  
Eun Ji Park ◽  
Tae Hwan Kim ◽  
Dong Hae Kang ◽  
Jong Taek Hong ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Induced Resistance ◽  
Logic Device ◽  
Electrical Isolation ◽  
Turn Around Time

Abstract Efficient and effective failure analysis (FA) of low-resistive defect was studied by using layout-aware and volume diagnosis. Small or marginal defect is one of the most difficult defectivities to identify during FA effort, especially if defect-induced resistance is not as high as the electrical isolation can detect. Here, we used new analysis methodologies, particularly using layout-aware and volume diagnosis, and prioritizing patterns in terms of a defective risk for following FA. The actual FA work verified that new analysis methodologies successfully identified low-resistive defect of Back-End-of-Line (BEOL) which was not detected by a conventional way and efficiently reduced the turn-around time (TAT) of physical failure analysis (PFA) by 57%, prompting fast feedback to fab.

Efficient Identification of Wafer Edge’s Defect with Volume Diagnosis Analysis and Plasma-FIB Planar Deprocessing

2020 ◽  
Author(s):  
Hoseok Song ◽  
Dong Hae Kang ◽  
Jaeseok Park ◽  
Jeongun Choi ◽  
Seongjun Cho
Keyword(s):  
Failure Analysis ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Logic Device ◽  
Wafer Edge

Abstract In the failure analysis (FA) of modern semiconductor logic device manufactured in foundry fab, efficient identification of wafer edge’s defect was studied by using volume diagnosis analysis and plasma-focused ion beam (FIB) planar deprocessing. As the chip from wafer edge has multiple defective locations, there is the limitation of the conventional FA work to identify them. Here, we used volume diagnosis analysis to identify the multiple defective locations within chip and plasma-FIB planar deprocessing to delayer those locations and find out defects. The actual FA work verified that new workflow successfully identified the different defects from different layers from the chip of wafer edge and efficiently accelerated the quantity of FA results, importantly leading to more representative status of inline defect.

Ultrasonic beam induced resistance change (SOBIRCH) method for failure analysis of semiconductor devices encapsulated by mold resin

2019 ◽  
Vol 58 (SG) ◽  
pp. SGGB03 ◽  
Author(s):  
Takuto Matsui ◽  
Kosuke Tatsumi ◽  
Tomohiro Kawashima ◽  
Yoshinobu Murakami ◽  
Naohiro Hozumi ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Induced Resistance ◽  
Semiconductor Devices ◽  
Ultrasonic Beam ◽  
Resistance Change

Failure Analysis Strategy for 2 Stacked Die CSP

2002 ◽  
Author(s):  
Shamsul Mohamed ◽  
Caroline Francis ◽  
Rodzaki Saad ◽  
Rosli Jaffar
Keyword(s):  
Failure Analysis ◽  
Time Frame ◽  
Corrective Action ◽  
Limited Time ◽  
Packaging Technology ◽  
Electrical Isolation ◽  
Analysis Strategy ◽  
New Challenges ◽  
Manufacturing Yield ◽  
Electrical Connectivity

Abstract Multi chip packages provide higher functionality in a module using multiplicity of dice. One specific packaging technology known as Stacked Chip-Scale Packaging raises new challenges for the failure analysis community. A methodology to perform full electrical isolation and failure analysis without damaging the electrical connectivity on either package or any of the dies in a stacked 2-die package is described. A second challenge is to obtain analysis result in a limited time frame in order to improve manufacturing yield and perform corrective action effectively. Example of successful failure analysis following this methodology on units with failure in packaging unit and units in failure in the die are presented.

Efficient Fault Isolation and Failure Analysis Methods to Root Cause Defects in Microprocessors

2019 ◽  
Author(s):  
Hasan Faraby ◽  
Tristan Deborde ◽  
Martin von Haartman
Keyword(s):  
Failure Analysis ◽  
Success Rate ◽  
State Of The Art ◽  
Fault Isolation ◽  
High Success Rate ◽  
Electrical Isolation ◽  
Root Cause ◽  
Isolation Techniques ◽  
Analysis Methods

Abstract This paper analyzes the through-put time and output of fault isolation and failure analysis (FI/FA) flows on state-of-the-art microprocessors. An average reduction in through-put time of 40% was demonstrated with a shortened FI/FA flow while still maintaining a high success rate. The direct FA/nano-probing flow which was utilized by up to around 90% of the fail cases omitted the optical fault isolation step and instead expanded the use of plasma FIB, nano-probing and electrical isolation techniques (such as diagnosis tools). The end result is shorter through-put time and higher FI/FA volume which is important in order to achieve a faster production ramp. In the paper two cases studies are presented to demonstrate the new efficient FI/FA techniques.

Advanced Package FA Flow for Next-Gen Packaging Technology Using EOTPR, 3D X-Ray and Plasma FIB

2016 ◽  
Author(s):  
Christian Schmidt ◽  
Pradip Sairam Pichumani ◽  
Jesse Alton ◽  
Martin Igarashi ◽  
Lisa Chan ◽  
...  
Keyword(s):  
Failure Analysis ◽  
State Of The Art ◽  
Packaging Technology ◽  
Standard Methods ◽  
X Ray ◽  
Different Types ◽  
Recent Developments ◽  
Turn Around Time

Abstract Within this paper, the authors present an adapted FA flow for state-of-the-art Package Failure Analysis for 20nm technology and below. As a key aspect, three methods (EOTPR, 3D Xray & PFIB) are introduced as the next-gen FA standard methods for emerging package technologies such as TSV, u-pillar bumping and stacked-die devices. By showing different types of daily Package FA requests, the paper compares & discusses important factors such as turn-around-time (TAT), success yield and results quality. In the end, an outlook is given how recent developments on these techniques will help to establish a new standard FA flow.

Ultra-Rapid Freezing of Isolated Skeletal Muscle Fibers

1977 ◽  
Vol 35 ◽  
pp. 576-577
Author(s):  
Joachim R. Sommer ◽  
Nancy R. Wallace
Keyword(s):  
Skeletal Muscle ◽  
Sarcoplasmic Reticulum ◽  
Granular Material ◽  
Nuclear Envelope ◽  
Intracellular Calcium ◽  
Ruthenium Red ◽  
Threshold Concentration ◽  
Rapid Freezing ◽  
Frog Skeletal Muscle ◽  
Electrical Isolation

After Howell (1) had shown that ruthenium red treatment of fixed frog skeletal muscle caused collapse of the intermediate cisternae of the sarcoplasmic reticulum (SR), forming a pentalaminate structure by obi iterating the SR lumen, we demonstrated that the phenomenon involves the entire SR including the nuclear envelope and that it also occurs after treatment with other cations, including calcium (2,3,4).From these observations we have formulated a hypothesis which states that intracellular calcium taken up by the SR at the end of contraction causes the M rete to collapse at a certain threshold concentration as the first step in a subsequent centrifugal zippering of the free SR toward the junctional SR (JSR). This would cause a) bulk transport of SR contents, such as calcium and granular material (4) into the JSR and, b) electrical isolation of the free SR from the JSR.

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