scholarly journals A Millimeter-Wave 4th-Harmonic Schottky Diode Mixer with Integrated Local Oscillator

2021 ◽  
Vol 11 (16) ◽  
pp. 7238
Author(s):  
José M. Pérez-Escudero ◽  
Carlos Quemada ◽  
Ramón Gonzalo ◽  
Iñigo Ederra
Keyword(s):  
Millimeter Wave ◽  
Schottky Diode ◽  
Experimental Validation ◽  
State Of The Art ◽  
Schottky Diodes ◽  
Noise Temperature ◽  
Local Oscillator ◽  
Conversion Loss ◽  
Fourth Harmonic ◽  
Equivalent Noise Temperature

In this paper the design and experimental validation of a fourth-harmonic mixer based on Schottky diodes working around 300 GHz is presented. The main novelty of this work consists in the integration of an MMIC-based local oscillator, working around 75 GHz, and a mixer in the same metallic block housing. A prototype has been characterized using the Y-Factor method and yields a best measured conversion loss and an equivalent noise temperature of 14 dB and 9600 K, respectively. This performance is comparable to the state-of-the-art for this type of mixer.

scholarly journals Design of 300 GHz Combined Doubler/Subharmonic Mixer Based on Schottky Diodes with Integrated MMIC Based Local Oscillator

Electronics ◽  
2020 ◽  
Vol 9 (12) ◽  
pp. 2112
Author(s):  
José M. Pérez-Escudero ◽  
Carlos Quemada ◽  
Ramón Gonzalo ◽  
Iñigo Ederra
Keyword(s):  
State Of The Art ◽  
Schottky Diodes ◽  
Noise Temperature ◽  
Local Oscillator ◽  
The State ◽  
Experimental Characterization ◽  
Conversion Loss ◽  
Equivalent Noise Temperature ◽  
Factor Technique

In this paper the design and experimental characterization of a combined doubler-subharmonic mixer based on Schottky diodes which uses a 75 GHz MMIC based local oscillator is presented. This solution integrates in the same substrate the doubler and the mixer, which share the same metallic packaging with the local oscillator. The prototype has been fabricated and measured. For characterization, the Y-Factor technique has been used and the prototype yields a best conversion loss and equivalent noise temperature of 11 dB and 1976 K, respectively, at 305 GHz. This performance is close to the state of the art, and shows the potential of this approach, which allows a significant reduction in terms of size and volume.

scholarly journals Experimental Study of Noise Temperature and Conversion Loss of SIS Junction Mixers

1986 ◽  
Vol 39 (3) ◽  
pp. 379 ◽  
Author(s):  
JC Macfarlane ◽  
LB Whitbourn ◽  
RA Batchelor
Keyword(s):  
Dynamic Range ◽  
Tunnel Junctions ◽  
Impedance Matching ◽  
Noise Temperature ◽  
Local Oscillator ◽  
Signal Frequency ◽  
Conversion Loss ◽  
Factors Affecting ◽  
Conversion Performance ◽  
Future Work

Experiments on the performance of superconductor-insulator-superconductor (SIS) tunnel junctions as heterodyne mixers at 40 GHz are reported. The techniques developed for the fabrication of multi-junction SIS series arrays differ from, and are considerably simpler than, other methods described in the literature. Results are reported on mixer noise temperature, conversion loss, saturation, local oscillator power levels and mixer dynamic range. Factors affecting the mixer's conversion performance are identified and comparisons are made with other reported results. It is concluded that mixer performance in the present experiments is limited by imperfect impedance matching at the signal frequency, due to relatively large values of parasitic capacitance in the junctions. Future work is aimed at both reducing the junction capacitance and redesigning the mixer mount to give improved r.f. matching.

scholarly journals Comparison of Microstrip W-Band Detectors Based on Zero Bias Schottky-Diodes

Electronics ◽  
2019 ◽  
Vol 8 (12) ◽  
pp. 1450
Author(s):  
Jéssica Gutiérrez ◽  
Kaoutar Zeljami ◽  
Juan Pablo Pascual ◽  
Tomás Fernández ◽  
Antonio Tazón
Keyword(s):  
Schottky Diode ◽  
State Of The Art ◽  
Low Cost ◽  
Schottky Diodes ◽  
Zero Bias ◽  
Simulation Tools ◽  
W Band ◽  
Intensive Use ◽  
Em Simulation ◽  
3D Em

This paper presents and discusses three different low-cost microstrip implementations of Schottky-diode detectors in W Band, based on the use of the Zero Bias Diode (ZBD) from VDI (Virginia Diodes, Charlottesville, VA, USA). Designs are based on a previous work of modeling of the ZBD diode. Designs also feature low-cost, easy-to-use tooling substrates (RT Duroid 5880, 5 mils thickness) and even low-cost discrete SMD components such as SOTA resistances (State Of The Art TM miniaturized surface mount resistors), which are modeled to be used well above commercial frequency margins. Intensive use of 3D EM simulation tools such as HFSS TM is done to support microstrip board modeling. Measurements of the three designs fabricated are compared to simulations and discussed.

scholarly journals Design and Measurement of a 0.67 THz Biased Sub-Harmonic Mixer

Electronics ◽  
2020 ◽  
Vol 9 (1) ◽  
pp. 161
Author(s):  
Guangyu Ji ◽  
Dehai Zhang ◽  
Jin Meng ◽  
Siyu Liu ◽  
Changfei Yao
Keyword(s):  
Glass Substrate ◽  
Schottky Diodes ◽  
Local Oscillator ◽  
Center Frequency ◽  
Measured Signal ◽  
Quartz Glass Substrate ◽  
Conversion Loss ◽  
Side Band ◽  
Harmonic Mixer ◽  
Series Configuration

To effectively reduce the requirement of Local Oscillator (LO) power, this paper presents the design and measurement of a biased sub-harmonic mixer working at the center frequency of 0.67 THz in hybrid integration. Two discrete Schottky diodes were placed across the LO waveguide in anti-series configuration on a 50 μm thick quartz-glass substrate, and chip capacitors were not required. At the driven of 3 mW@335 GHz and 0.35 V, the mixer had a minimum measured Signal Side-Band (SSB) conversion loss of 15.3 dB at the frequency of 667 GHz. The typical conversion loss is 18.2 dB in the band of 650 GHz to 690 GHz.

Methodology for Analysis of Schottky Diode Failures

2010 ◽  
Author(s):  
Bhanu P. Sood ◽  
Michael Pecht ◽  
John Miker ◽  
Tom Wanek
Keyword(s):  
Failure Mode ◽  
Schottky Diode ◽  
Failure Modes ◽  
Schottky Diodes ◽  
Failure Mechanisms ◽  
Forward Voltage ◽  
Fast Switching ◽  
Voltage Drops ◽  
The Common

Abstract Schottky diodes are semiconductor switching devices with low forward voltage drops and very fast switching speeds. This paper provides an overview of the common failure modes in Schottky diodes and corresponding failure mechanisms associated with each failure mode. Results of material level evaluation on diodes and packages as well as manufacturing and assembly processes are analyzed to identify a set of possible failure sites with associated failure modes, mechanisms, and causes. A case study is then presented to illustrate the application of a systematic FMMEA methodology to the analysis of a specific failure in a Schottky diode package.

Millimeter-wave dual-mode and dual-band switchable Gilbert up-conversion mixer in 65-nm CMOS process

2021 ◽  
pp. 1-5
Author(s):  
Fang Zhu ◽  
Guo Qing Luo
Keyword(s):  
Millimeter Wave ◽  
Complementary Metal Oxide Semiconductor ◽  
Local Oscillator ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Dual Band ◽  
Cmos Process ◽  
Pumping Power ◽  
Dual Mode ◽  
Dc Power

Abstract In this paper, a millimeter-wave (MMW) dual-mode and dual-band switchable Gilbert up-conversion mixer in a commercial 65-nm complementary metal oxide semiconductor (CMOS) process is presented. By simply changing the bias, the proposed CMOS Gilbert up-conversion mixer can be switched between subharmonic and fundamental operation modes for MMW dual-band applications. With a low local oscillator pumping power of 3 dBm and low dc power consumption of 6 mW, the proposed CMOS Gilbert up-conversion mixer exhibits a measured conversion gain of −0.5 ± 1.5 dB from 37 to 50 GHz and 2.5 ± 1.5 dB from 17.5 to 32 GHz for the subharmonic and fundamental modes, respectively.

Characteristics of Millimeter-Wave Schottky Diodes with Microcluster Interface

2006 ◽  
Author(s):  
E. Kollberg ◽  
H. Zirath ◽  
M.V. Schneider ◽  
A.Y. Chon ◽  
A. Jelenski
Keyword(s):  
Millimeter Wave ◽  
Schottky Diodes
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