scholarly journals New van der Waals Heterostructures Based on Borophene and Rhenium Sulfide/Selenide for Photovoltaics: An Ab Initio Study

2021 ◽  
Vol 11 (24) ◽  
pp. 11636
Author(s):  
Michael M. Slepchenkov ◽  
Dmitry A. Kolosov ◽  
Olga E. Glukhova

One of the urgent tasks of modern materials science is the search for new materials with improved optoelectronic properties for various applications of optoelectronics and photovoltaics. In this paper, using ab initio methods, we investigate the possibility of forming new types of van der Waals heterostructures based on monolayers of triangulated borophene, and monolayers of rhenium sulfide (ReS), and rhenium selenide (ReSe2), and predict their optoelectronic properties. Energy stable atomic configurations of borophene/ReS2 and borophene/ReSe2 van der Waals heterostructures were obtained using density functional theory (DFT) calculations in the Siesta software package. The results of calculating the density of electronic states of the obtained supercells showed that the proposed types of heterostructures are characterized by a metallic type of conductivity. Based on the calculated optical absorption and photocurrent spectra in the wavelength range of 200 to 2000 nm, it is found that borophene/ReS2 and borophene/ReSe2 heterostructures demonstrate a high absorption coefficient in the near- and far-UV(ultraviolet) ranges, as well as the presence of high-intensity photocurrent peaks in the visible range of electromagnetic radiation. Based on the obtained data of ab initio calculations, it is predicted that the proposed borophene/ReS2 and borophene/ReSe2 heterostructures can be promising materials for UV detectors and photosensitive materials for generating charge carriers upon absorption of light.

2019 ◽  
Vol 21 (34) ◽  
pp. 18612-18621 ◽  
Author(s):  
M. Idrees ◽  
H. U. Din ◽  
R. Ali ◽  
G. Rehman ◽  
T. Hussain ◽  
...  

Janus monolayers and their van der Waals heterostuctures are investigated by hybrid density functional theory calculations.


2019 ◽  
Vol 21 (41) ◽  
pp. 23179-23186 ◽  
Author(s):  
Shilin Tan ◽  
Yipeng Zhao ◽  
Jiansheng Dong ◽  
Guowei Yang ◽  
Gang Ouyang

Inserting an insulator at the interface in vdW heterostructure solar cell unit can improve the photoelectric conversion efficiency, and the insulator has an optimal thickness.


RSC Advances ◽  
2017 ◽  
Vol 7 (55) ◽  
pp. 34584-34590 ◽  
Author(s):  
Wei Zhang ◽  
Lifa Zhang

Using hybrid density functional calculations, we studied the electronic and optical properties of graphitic zinc oxide (g-ZnO) and phosphorene van der Waals (vdW) heterostructures.


RSC Advances ◽  
2017 ◽  
Vol 7 (28) ◽  
pp. 17122-17127 ◽  
Author(s):  
Polina Tereshchuk ◽  
Rafael C. Amaral ◽  
Yohanna Seminovski ◽  
Juarez L. F. Da Silva

We report an ab initio investigation to obtain an improved atomistic understanding of the adsorption properties of glycerol on a defected Pt6/Pt(100) substrate.


RSC Advances ◽  
2022 ◽  
Vol 12 (1) ◽  
pp. 42-52
Author(s):  
M. Munawar ◽  
M. Idrees ◽  
Iftikhar Ahmad ◽  
H. U. Din ◽  
B. Amin

Using density functional theory calculations, we have investigated the electronic band structure, optical and photocatalytic response of BSe, M2CO2 (M = Ti, Zr, Hf) monolayers and their corresponding BSe–M2CO2 (M = Ti, Zr, Hf) van der Waals heterostructures.


Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3338
Author(s):  
Jiali Wang ◽  
Xiuwen Zhao ◽  
Guichao Hu ◽  
Junfeng Ren ◽  
Xiaobo Yuan

van der Waals heterostructures (vdWHs) can exhibit novel physical properties and a wide range of applications compared with monolayer two-dimensional (2D) materials. In this work, we investigate the electronic and optical properties of MoSTe/MoGe2N4 vdWH under two different configurations using the VASP software package based on density functional theory. The results show that Te4-MoSTe/MoGe2N4 vdWH is a semimetal, while S4-MoSTe/MoGe2N4 vdWH is a direct band gap semiconductor. Compared with the two monolayers, the absorption coefficient of MoSTe/MoGe2N4 vdWH increases significantly. In addition, the electronic structure and the absorption coefficient can be manipulated by applying biaxial strains and changing interlayer distances. These studies show that MoSTe/MoGe2N4 vdWH is an excellent candidate for high-performance optoelectronic devices.


2019 ◽  
Vol 7 (43) ◽  
pp. 13613-13621 ◽  
Author(s):  
Caiyun Wang ◽  
Zhe Kang ◽  
Zhi Zheng ◽  
Yanan Zhang ◽  
Louwen Zhang ◽  
...  

Nowadays monolayer transition metal chalcogenides (TMCs) have been widely researched due to their excellent optoelectronic properties.


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