scholarly journals Tuning Structural Properties of WO3 Thin Films for Photoelectrocatalytic Water Oxidation

Catalysts ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 381
Author(s):  
Amar Kamal Mohamedkhair ◽  
Qasem Ahmed Drmosh ◽  
Mohammad Qamar ◽  
Zain Hassan Yamani
Keyword(s):  
Thin Film ◽  
Film Thickness ◽  
Band Gap ◽  
Water Oxidation ◽  
Annealing Temperature ◽  
Film Deposition ◽  
Visible Radiation ◽  
Transfer Resistance ◽  
Post Annealing ◽  
Post Annealing Temperature

The preparation of tungsten oxide (WO3) thin film by direct current (DC) reactive sputtering magnetron method and its photoelectrocatalytic properties for water oxidation reaction are investigated using ultraviolet-visible radiation. The structural, morphological, and compositional properties of WO3 are fine-tuned by controlling thin film deposition time, and post-annealing temperature and environment. The findings suggest that the band gap of WO3 can be controlled by adjusting the post-annealing temperature; the band gap decreased from 3.2 to 2.7 eV by increasing the annealing temperature from 100 to 600 °C. The theoretical calculations of the WO3 bandgap and the density of state are performed by density functional theory (DFT). Following the band gap modification, the photoelectrocatalytic activity increased and the maximum photocurrent (0.9 mA/cm2 at 0.6 VSCE) is recorded with WO3 film heated at 500 °C. The WO3 film heated under air exhibits much better performance in photoelectrochemical water oxidation process than that of annealed under inert atmosphere, due to its structural variation. The change in sputtering time leads to the formation of WO3 with varying film thickness, and the maximum photocurrent is observed when the film thickness is approximately 150 nm. The electrical conductivity and charge transfer resistance are measured and correlated to the properties and the performance of the WO3 photoelectrodes. In addition, the WO3 photoelectrode exhibits excellent photoelectrochemical stability.

scholarly journals Optimizing the Properties of La0.8Sr0.2CrO3 Thin Films through Post-Annealing for High-Temperature Sensing

Nanomaterials ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 1802
Author(s):  
Dan Liu ◽  
Peng Shi ◽  
Yantao Liu ◽  
Yijun Zhang ◽  
Bian Tian ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Annealing Temperature ◽  
Rf Sputtering ◽  
Maximum Size ◽  
Cross Sectional ◽  
Post Annealing ◽  
Maximum Conductivity ◽  
Different Temperatures ◽  
Post Annealing Temperature

La0.8Sr0.2CrO3 (0.2LSCO) thin films were prepared via the RF sputtering method to fabricate thin-film thermocouples (TFTCs), and post-annealing processes were employed to optimize their properties to sense high temperatures. The XRD patterns of the 0.2LSCO thin films showed a pure phase, and their crystallinities increased with the post-annealing temperature from 800 °C to 1000 °C, while some impurity phases of Cr2O3 and SrCr2O7 were observed above 1000 °C. The surface images indicated that the grain size increased first and then decreased, and the maximum size was 0.71 μm at 1100 °C. The cross-sectional images showed that the thickness of the 0.2LSCO thin films decreased significantly above 1000 °C, which was mainly due to the evaporation of Sr2+ and Cr3+. At the same time, the maximum conductivity was achieved for the film annealed at 1000 °C, which was 6.25 × 10−2 S/cm. When the thin films post-annealed at different temperatures were coupled with Pt reference electrodes to form TFTCs, the trend of output voltage to first increase and then decrease was observed, and the maximum average Seebeck coefficient of 167.8 µV/°C was obtained for the 0.2LSCO thin film post-annealed at 1100 °C. Through post-annealing optimization, the best post-annealing temperature was 1000 °C, which made the 0.2LSCO thin film more stable to monitor the temperatures of turbine engines for a long period of time.

Effect of substrate temperature and post annealing temperature on ZnO:Zn PLD thin film properties

2017 ◽  
Vol 74 ◽  
pp. 139-149 ◽  
Author(s):  
E. Hasabeldaim ◽  
O.M. Ntwaeaborwa ◽  
R.E. Kroon ◽  
E. Coetsee ◽  
H.C. Swart
Keyword(s):  
Thin Film ◽  
Substrate Temperature ◽  
Annealing Temperature ◽  
Film Properties ◽  
Post Annealing ◽  
Post Annealing Temperature

Crystallization Dynamics Of Ferroelectric Pzt (52/48) Thin Film Prepared By Reactive Cosputtering On Pt On Si(100)

1993 ◽  
Vol 321 ◽  
Author(s):  
Woong Kil Choo ◽  
Hyo Jin Kim ◽  
Kwang Young Kim ◽  
Sung Tae Kim
Keyword(s):  
Thin Film ◽  
Crystallization Process ◽  
Annealing Temperature ◽  
Perovskite Phase ◽  
X Ray Diffraction ◽  
Post Annealing ◽  
Pzt Films ◽  
Crystallization Dynamics ◽  
Post Annealing Temperature ◽  
Ferroelectric Perovskite

ABSTRACTThe crystallization process and microstructural evolution of PZT (52/48) thin films deposited on Pt thin film electrode on Si (100) by reactive multitarget cosputtering technique have been studied as a function of post-annealing temperature and holding time. As annealing temperature increases, the Amorphous PZT films as-deposited at low substrate temperature of 200 °C crystallize into pyrochlore at 450 °C and ferroelectric perovskite phase with pseudo-cubic structure at 550 °C in sequence. X-ray diffraction data show crystallization into perovskite phase to be complete in 30 Minutes at 550 °C. Furthermore, the change of PZT/Pt/Ti/SiO2/Si interfacial TEM Morphology during heat-treatment has been closely scrutinized.

scholarly journals Study of Effect of PZT Thin Film Prepared in Different Post-Annealing Temperature Using SIMS

2011 ◽  
Vol 24 (5) ◽  
pp. 392-397
Author(s):  
Shenteng Shenteng ◽  
Tae-Yong Lee ◽  
Kyung-Chun Lee ◽  
Won-Young Hur ◽  
Hyun-Chang Shin ◽  
...  
Keyword(s):  
Thin Film ◽  
Annealing Temperature ◽  
Post Annealing ◽  
Pzt Thin Film ◽  
Post Annealing Temperature

scholarly journals All-Sputtering, High-Transparency, Good-Stability Coplanar Top-Gate Thin Film Transistors

2018 ◽  
Vol 9 (1) ◽  
pp. 83
Author(s):  
Jianqiu Chen ◽  
Xiuqi Huang ◽  
Qunjie Li ◽  
Zhiqiang Fang ◽  
Honglong Ning ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Annealing Temperature ◽  
Positive Bias ◽  
Visible Light Region ◽  
High Transparency ◽  
Post Annealing ◽  
Light Region ◽  
Bias Stability ◽  
Post Annealing Temperature

In this work, transparent, stable coplanar top-gate thin film transistors (TFTs) with an active layer of neodymium-doped indium oxide and zinc oxide (Nd-IZO) were successfully fabricated on a glass substrate by all sputtering processes. The devices with a post-annealing temperature of 400 °C exhibited good electrical performances with a saturation mobility (μsat) of 4.25 cm2·V−1·S−1, Ion/Ioff ratio about 106, Vth of −0.97 V and SS about 0.34 V/decade. Furthermore, the devices exhibited excellent negative and positive bias stability (NBS, PBS) of only a ΔVth shift of about −0.04 V and 0.05 V after 1 h, respectively. In addition, the devices showed high transparency about 96% over the visible-light region of 400–700 nm, which indicates a great potential in transparent displays.

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