Formation of nanoripples on ZnO flat substrates and nanorods by gas cluster ion bombardment

In the present study Ar+ cluster ions accelerated by voltages in the range of 5–10 kV are used to irradiate single crystal ZnO substrates and nanorods to fabricate self-assembled surface nanoripple arrays. The ripple formation is observed when the incidence angle of the cluster beam is in the range of 30–70°. The influence of incidence angle, accelerating voltage, and fluence on the ripple formation is studied. Wavelength and height of the nanoripples increase with increasing accelerating voltage and fluence for both targets. The nanoripples formed on the flat substrates remind of aeolian sand ripples. The ripples formed at high ion fluences on the nanorod facets resemble well-ordered parallel steps or ribs. The more ordered ripple formation on nanorods can be associated with the confinement of the nanorod facets in comparison with the quasi-infinite surface of the flat substrates.

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The effect of incidence angle on ion bombardment induced surface topography development on single crystal copper

Nuclear Instruments and Methods in Physics Research ◽

10.1016/0029-554x(82)90574-2 ◽

1982 ◽

Vol 194 (1-3) ◽

pp. 509-514 ◽

Cited By ~ 12

Author(s):

G. Carter ◽

M.J. Nobes ◽

G.W. Lewis ◽

J.L. Whitton

Keyword(s):

Single Crystal ◽

Surface Topography ◽

Incidence Angle ◽

Ion Bombardment ◽

Single Crystal Copper

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Ripple Formation during Oblique Angle Etching

Coatings ◽

10.3390/coatings9040272 ◽

2019 ◽

Vol 9 (4) ◽

pp. 272

Author(s):

Mehmet F. Cansizoglu ◽

Mesut Yurukcu ◽

Tansel Karabacak

Keyword(s):

Plasma Etching ◽

Incidence Angle ◽

Incident Beam ◽

Root Mean Square Roughness ◽

Sticking Coefficient ◽

Oblique Angle ◽

Nano Fabrication ◽

Ripple Formation ◽

Rapid Formation ◽

Roughness Analysis

Chemical removal of materials from the surface is a fundamental step in micro- and nano-fabrication processes. In conventional plasma etching, etchant molecules are non-directional and perform a uniform etching over the surface. However, using a highly directional obliquely incident beam of etching agent, it can be possible to engineer surfaces in the micro- or nano- scales. Surfaces can be patterned with periodic morphologies like ripples and mounds by controlling parameters including the incidence angle with the surface and sticking coefficient of etching particles. In this study, the dynamic evolution of a rippled morphology has been investigated during oblique angle etching (OAE) using Monte Carlo simulations. Fourier space and roughness analysis were performed on the resulting simulated surfaces. The ripple formation was observed to originate from re-emission and shadowing effects during OAE. Our results show that the ripple wavelength and root-mean-square roughness evolved at a more stable rate with accompanying quasi-periodic ripple formation at higher etching angles (θ > 60°) and at sticking coefficient values (Sc) 0.5 ≤ Sc ≤ 1. On the other hand, smaller etching angle (θ < 60°) and lower sticking coefficient values lead to a rapid formation of wider and deeper ripples. This result of this study can be helpful to develop new surface patterning techniques by etching.

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Hydrogen Ion Beam Processing of Single Crystal Diamond Chips

MRS Proceedings ◽

10.1557/proc-354-717 ◽

1994 ◽

Vol 354 ◽

Author(s):

Shuji Kiyohara ◽

Iwao Miyamoto

Keyword(s):

Surface Roughness ◽

Single Crystal ◽

Incidence Angle ◽

Ion Beam ◽

Etching Rate ◽

Hydrogen Ion ◽

Hydrogen Ions ◽

Ion Beam Etching ◽

Single Crystal Diamond ◽

Before And After

AbstractIn order to apply ion beam etching with hydrogen ions to the ultra-precision processing of diamond tools, hydrogen ion beam etching characteristics of single crystal diamond chips with (100) face were investigated. The etching rate of diamond for 500 eV and 1000 eV hydrogen ions increases with the increase of the ion incidence angle, and eventually reaches a maximum at the ion incidence angle of approximately 50°, then may decrease with the increase of the ion incidence angle. The dependence of the etching rate on the ion incidence angle of hydrogen ions is fairly similar to that obtained with argon ions. Furthermore, the surface roughness of diamond chips before and after hydrogen ion beam etching was evaluated using an atomic force microscope. Consequently, the surface roughness after hydrogen ion beam etching decreases with the increase of the ion incidence angle within range of the ion incidence angle of 60°.

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SPUTTERING WITH GAS CLUSTER-ION BEAMS

Surface Review and Letters ◽

10.1142/s0218625x96001820 ◽

1996 ◽

Vol 03 (01) ◽

pp. 1017-1021 ◽

Cited By ~ 10

Author(s):

J. MATSUO ◽

M. AKIZUKI ◽

J. NORTHBY ◽

G.H. TAKAOKA ◽

I. YAMADA

Keyword(s):

Ion Irradiation ◽

Removal Rate ◽

Ion Beam ◽

Solid Surfaces ◽

Silicon Surfaces ◽

Cluster Ions ◽

Mass Filter ◽

Cluster Bombardment ◽

Cluster Ion Beams ◽

Cluster Ion

A high-current (~100 nA) cluster-ion-beam equipment with a new mass filter has been developed to study the energetic cluster-bombardment effects on solid surfaces. A dramatic reduction of Cu concentration on silicon surfaces has been achieved by 20-keV Ar cluster (N~3000) ion bombardment. The removal rate of Cu with cluster ions is two orders of magnitude higher than that with monomer ions. A significantly higher sputtering yield is expected for cluster-ion irradiation. An energetic cluster-ion beam is quite suitable for removal of metal.

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Borate nonlinear optical single crystal surface finishing by argon cluster ion sputtering

Surfaces and Interfaces ◽

10.1016/j.surfin.2021.101520 ◽

2021 ◽

pp. 101520

Author(s):

N.G. Korobeishchikov ◽

I.V. Nikolaev ◽

V.V. Atuchin ◽

I.P. Prosvirin ◽

A. Tolstogouzov ◽

...

Keyword(s):

Single Crystal ◽

Nonlinear Optical ◽

Crystal Surface ◽

Surface Finishing ◽

Ion Sputtering ◽

Single Crystal Surface ◽

Cluster Ion

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A New Type of Cluster-Ion Source for Thin Film Deposition

MRS Proceedings ◽

10.1557/proc-206-291 ◽

1990 ◽

Vol 206 ◽

Cited By ~ 4

Author(s):

Hellmut Haberland ◽

Martin Karrais ◽

Martin Mall

Keyword(s):

Electron Impact ◽

Plane Surface ◽

Thin Film Deposition ◽

Ion Source ◽

Film Deposition ◽

Cluster Ions ◽

Cluster Ion ◽

Impact Ionisation ◽

Aggregation Technique ◽

High Degree

ABSTRACTAtoms are gas discharge sputtered from a solid target. They are condensed to form clusters using the gas aggregation technique. An intense beam of clusters of all solid materials can be obtained. Up to 80 % of the clusters can be ionised without using additional electron impact ionisation. Total deposition rates vary between 1 and 1000 Å per second depending on cluster diameter, which can be varied between 3 and 500 nm. Thin films of Al, Cu, and Mo have been produced so far. For non accelerated beams a weakly adhering mostly coulored deposit is obtained. Accelerating the cluster ions this changes to a strongly adhering film, having a shiny metallic appearance, and a very sharp and plane surface as seen in an electron microscope. The advantages compared to Kyoto ICB-method are: easy control of the cluster size, no electron impact ionisation, high degree of ionisation, and sputtering is used instead of thermal evaporation, which allows the use of high melting point materials.

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