scholarly journals Structural and Electronic Properties of Polycrystalline InAs Thin Films Deposited on Silicon Dioxide and Glass at Temperatures below 500 °C

Crystals ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 160 ◽  
Author(s):  
Anya Curran ◽  
Agnieszka Gocalinska ◽  
Andrea Pescaglini ◽  
Eleonora Secco ◽  
Enrica Mura ◽  
...  
Keyword(s):  
Thin Films ◽  
Indium Arsenide ◽  
Room Temperature ◽  
Gate Dielectric ◽  
Semiconducting Materials ◽  
Organic Vapor ◽  
Structural And Electronic Properties ◽  
Metal Organic ◽  
Inas Thin Films ◽  
Temperature Factors

Polycrystalline indium arsenide (poly InAs) thin films grown at 475 °C by metal organic vapor phase epitaxy (MOVPE) are explored as possible candidates for low-temperature-grown semiconducting materials. Structural and transport properties of the films are reported, with electron mobilities of ~100 cm2/V·s achieved at room temperature, and values reaching 155 cm2/V·s for a heterostructure including the polycrystalline InAs film. Test structures fabricated with an aluminum oxide (Al2O3) top-gate dielectric show that transistor-type behavior is possible when poly InAs films are implemented as the channel material, with maximum ION/IOFF > 250 achieved at −50 °C and ION/IOFF = 90 at room temperature. Factors limiting the ION/IOFF ratio are investigated and recommendations are made for future implementation of this material.

Room-Temperature GaAs/AlGaAs Quantum Cascade Lasers Grown by Metal–Organic Vapor Phase Epitaxy

2011 ◽  
Vol 23 (12) ◽  
pp. 774-776 ◽  
Author(s):  
A B Krysa ◽  
D G Revin ◽  
J P Commin ◽  
C N Atkins ◽  
K Kennedy ◽  
...  
Keyword(s):  
Vapor Phase ◽  
Room Temperature ◽  
Quantum Cascade Lasers ◽  
Vapor Phase Epitaxy ◽  
Quantum Cascade ◽  
Organic Vapor ◽  
Metal Organic ◽  
Cascade Lasers

scholarly journals General incorporation of diverse components inside metal-organic framework thin films at room temperature

2014 ◽  
Vol 5 (1) ◽  
Author(s):  
Yiyin Mao ◽  
Junwei Li ◽  
Wei Cao ◽  
Yulong Ying ◽  
Pan Hu ◽  
...  
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Metal Organic Framework ◽  
Metal Organic ◽  
Organic Framework

Residual and intentional n-type doping of ZnO thin films grown by metal-organic vapor phase epitaxy on sapphire and ZnO substrates

2014 ◽  
Vol 115 (11) ◽  
pp. 113508 ◽  
Author(s):  
Stéphane Brochen ◽  
Matthieu Lafossas ◽  
Ivan-Christophe Robin ◽  
Pierre Ferret ◽  
Frédérique Gemain ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Zno Thin Films ◽  
Organic Vapor ◽  
Metal Organic

Electrical and structural characterizations of BGaN thin films grown by metal-organic vapor-phase epitaxy

2009 ◽  
Vol 6 (S2) ◽  
pp. S1029-S1032 ◽  
Author(s):  
T. Baghdadli ◽  
S. Ould Saad Hamady ◽  
S. Gautier ◽  
T. Moudakir ◽  
B. Benyoucef ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Phase ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic ◽  
Structural Characterizations

Structural characterization of a-plane Zn1−xCdxO (0⩽x⩽0.085) thin films grown by metal-organic vapor phase epitaxy

2006 ◽  
Vol 99 (2) ◽  
pp. 023514 ◽  
Author(s):  
J. Zúñiga-Pérez ◽  
V. Muñoz-Sanjosé ◽  
M. Lorenz ◽  
G. Benndorf ◽  
S. Heitsch ◽  
...  
Keyword(s):  
Thin Films ◽  
Vapor Phase ◽  
Structural Characterization ◽  
Vapor Phase Epitaxy ◽  
Organic Vapor ◽  
Metal Organic

Structure and Physical Properties of Bi4Ti3O12Thin Films Prepared by APMOCVD and RTA

1997 ◽  
Vol 493 ◽  
Author(s):  
H. Wang ◽  
Z. Wang ◽  
S. X. Shang ◽  
M. Wang
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Atmospheric Pressure ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Planar Silicon ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTFerroelectric Bi4Ti3O12 thin films were grown by atmospheric pressure metal-organic chemical vapor deposition. After rapid thermal annealing (RTA), the films have a (001) preferred orientation, The I-V and C-V characteristics were studied, the resistivity were in the rang of 1010∼1013 ω. cm, at room temperature. The memory window is about 3V. These results snow that The Bi4Ti3O12 films prepared at present work are suitable for making ferroelectric FEFETs memories. By using planar silicon processing, the FEFET devices have been fabricated, which shows clearly memory effect under a applied ±5V gate voltage.

Room-temperature multiferroic properties of Bi4.15Nd0.85Ti3FeO15 thin films prepared by the metal–organic decomposition method

2010 ◽  
Vol 150 (35-36) ◽  
pp. 1646-1649 ◽  
Author(s):  
Fengzhen Huang ◽  
Xiaomei Lu ◽  
Cong Chen ◽  
Weiwei Lin ◽  
Xiaochun Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Decomposition Method ◽  
Room Temperature ◽  
Multiferroic Properties ◽  
Metal Organic ◽  
Organic Decomposition

In Segregation Effects on Optical and Doping Properties of InAlGaN Quaternary for UV Emitting Devices

2000 ◽  
Vol 639 ◽  
Author(s):  
Hideki Hirayama ◽  
Atsuhiro Kinoshita ◽  
Takuya Yamanaka ◽  
Akira Hirata ◽  
Yoshinobu Aoyagi
Keyword(s):  
Room Temperature ◽  
Hole Concentration ◽  
Single Quantum Well ◽  
Al Content ◽  
Organic Vapor ◽  
Band Emission ◽  
Uv Emission ◽  
Micron Size ◽  
Metal Organic ◽  
High Al Content

ABSTRACTWe demonstrate room temperature intense ultraviolet (UV) emission wavelength ranging 300- 340 nm from InxAlyGa1-x-yN quaternary alloys grown by metal-organic vapor-phase-epitaxy (MOVPE). We found that the UV emission is drastically enhanced by introducing several percent of In into AlGaN. We fabricated single quantum well (SQW) consisting of InxAlyGa1-x-yN quaternary well and barrier, and clearly observed In segregation of sub-micron size from a cathode luminescence (CL) images. The intensity of 320nm-band emission from InAlGaN/InAlGaN QWs were as strong as those of 410nm-band emission from InGaN based QWs, at room temperature. The temperature dependence of photoluminescence (PL) emission for InAlGaN based QWs were much improved in comparison with GaN or AlGaN based QWs. We also grew Mg-doped InxAlyGa1-x-yN quaternary, and obtained hole concentration of 3×1017cm−3 by Hall measurement for high Al content (more than 50%) InxAlyGa1-x-yN quaternary.

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