scholarly journals Synthesis of Thermally Stable h-BN-CNT Hetero-Structures via Microwave Heating of Ethylene under Nickel, Iron, and Silver Catalysts

Crystals ◽  
2021 ◽  
Vol 11 (9) ◽  
pp. 1097
Author(s):  
Yahaya Saadu Itas ◽  
Chifu E. Ndikilar ◽  
Tasiu Zangina ◽  
Hafeez Yusuf Hafeez ◽  
A. A. Safana ◽  
...  
Keyword(s):  
Hexagonal Boron Nitride ◽  
Thermal Resistivity ◽  
Bandgap Energy ◽  
Generalized Gradient ◽  
Neem Tree ◽  
Nickel Iron ◽  
Silver Catalysts ◽  
Three Samples ◽  
Structural And Electronic Properties ◽  
Armchair Swcnt

Initially, three samples of carbon nanotubes (SWCNTs) were synthesized from neem tree material. Afterward, these samples were coated with hexagonal boron nitride (h-BN) to form h-BN and CNT composite (h-BN-CNT). The essence of using h-BN (being a perfect insulator) with armchair SWCNT (being a conductor) is to create an interface between an insulator and conductor. The samples were treated under three different transition metal nanoparticles; silver, iron, and nickel. Thermogravimetric (TGA) analysis reveals that h-BN/CNT is thermally more stable with silver than iron and nickel nanoparticles. TGA profile showed resistance to mass loss at the beginning due to the higher thermal resistivity by the impurity compounds. The DFT calculation, generalized gradient approximation (GGA), and Perdew–Burke–Ernzerhof (PBE) analysis found engineered bandgap energy of 3.4 eV for the synthesized h-BN-CNT heterostructure. Because of its unique structural and electronic properties such as tunable bandgaps, the h-BN-CNT heterostructure may open new ways for manipulating excitons in the CNTs, and thus can be explored to develop various new electronic devices.

scholarly journals First-principle investigations of structural and electronic properties of TMAl (TM = Fe, Co, and Ni) transition metal aluminides

2015 ◽  
Vol 33 (2) ◽  
pp. 251-258
Author(s):  
Bendouma Doumi ◽  
Allel Mokaddem ◽  
Mustapha Ishak-Boushaki ◽  
Miloud Boutaleb ◽  
Abdelkader Tadjer
Keyword(s):  
Transition Metal ◽  
Electronic Properties ◽  
Density Functional ◽  
First Principle ◽  
Generalized Gradient ◽  
Metallic Behavior ◽  
Plane Wave Method ◽  
Structural And Electronic Properties ◽  
The Difference ◽  
Metal Aluminides

AbstractIn the present work, we have investigated the structural and electronic properties of TMAl (TM = Fe, Co, and Ni) transition metal aluminides in the B2 structure, using first-principle calculations of the density functional theory (DFT) based on the linearized augmented plane wave method (FP-LAPW) as implemented in the WIEN2k code, in which the energy of exchange and correlation are treated by the generalized gradient approximation (GGA), proposed in 1996 by Perdew, Burke and Ernzerhof (PBE). The ground state properties have been calculated and compared with other calculations, and the electronic structures of all FeAl, CoAl, and NiAl compounds exhibited a metallic behavior. It was depicted that the density of states is characterized by the large hybridization between the s-p (Al) and 3d (Fe, Co, and Ni) states, which creates the pseudogap in the region of anti-bonding states. Moreover, the band structures of FeAl, CoAl, and NiAl are similar to each other and the difference between them is in the energy level of each band relative to the Fermi level.

scholarly journals Structural and Electronic Properties of Orthorhombic Phase Bi2Se3 Based On First-Principles Study

2019 ◽  
Vol 16 (2) ◽  
pp. 77 ◽  
Author(s):  
Muhammad Zamir Mohyedin ◽  
Afiq Radzwan ◽  
Mohammad Fariz Mohamad Taib ◽  
Rosnah Zakaria ◽  
Nor Kartini Jaafar ◽  
...  
Keyword(s):  
Electronic Properties ◽  
First Principles ◽  
Density Functional ◽  
Local Density ◽  
Computer Code ◽  
First Principles Calculation ◽  
Generalized Gradient ◽  
Exchange Correlation ◽  
Percentage Difference ◽  
Structural And Electronic Properties

Bi2Se3 is one of the promising materials in thermoelectric devices and very useful out of environmental concern due to its efficiency to perform at room temperature. Based on the first-principles calculation of density functional theory (DFT) by using CASTEP computer code, structural and electronic properties of Bi2Se3 were investigated. The calculation is conducted within the exchange-correlation of local density approximation (LDA) and generalized gradient approximation within the revision of Perdew-Burke-Ernzerhof (GGA-PBE) functional. It was found that the results are consistent with previous works of theoretical study with small percentage difference. LDA exchange-correlation functional method is more accurate and have a better agreement than GGA-PBE to describe the structural properties of Bi2Se3 which consist of lattice parameters. LDA functional also shown more accurate electronic structure of Bi2Se3 that consist of band structure and density of states (DOS) which consistent with most previous theoretical works with small percentage difference. This study proves the reliability of CASTEP computer code and show LDA exchange-correlation functional is more accurate in describing the nature of Bi2Se3 compared to the other functionals.

First-principles study of BiFeO3 and BaTiO3 in tetragonal structure

2019 ◽  
Vol 33 (21) ◽  
pp. 1950231
Author(s):  
Akbar Ali ◽  
Imad Khan ◽  
Zahid Ali ◽  
Fawad Khan ◽  
Iftikhar Ahmad
Keyword(s):  
Density Functional ◽  
Coupling Effect ◽  
Ferroelectric Materials ◽  
Bandgap Energy ◽  
Spin Orbit Coupling ◽  
Generalized Gradient ◽  
Functional Theory ◽  
Exchange Correlation ◽  
Total Energies ◽  
A Site

Structural, electronic, magnetic and mechanical properties of the perovskites BiFeO3 (BFO) and BaTiO3 (BTO) are investigated using density functional theory (DFT). Structural and mechanical parameters are calculated using generalized gradient approximation (GGA) and the results consistent with the available literature. The stable magnetic phases are achieved by optimizing total energies versus volumes of the cells in different magnetic configurations such as nonmagnetic (NM), ferromagnetic (FM) and antiferromagnetic (AFM). BTO is found to be NM while BFO favors G-type AFM (G-AFM) phase. The electronic properties are investigated using GGA, GGA with Hubbard potential (GGA[Formula: see text]+[Formula: see text]U) and modified Becke–Johnson (GGA-mBJ) exchange–correlation functionals. BFO is found to be a direct bandgap semiconductor having gap energy value 3.0 eV whereas BTO is an indirect semiconductor with bandgap energy 2.9 eV. Spin–orbit coupling effect is dominant in BFO due to the larger size of A-site cation. The electrical polarization shows that both the compounds are ferroelectric materials with significant spontaneous polarization of 144.1 [Formula: see text]C/cm2 and 27.9 [Formula: see text]C/cm2 for BFO and BTO respectively.

scholarly journals Carbon-Based Band Gap Engineering in the h-BN Analytical Modeling

Materials ◽  
2020 ◽  
Vol 13 (5) ◽  
pp. 1026
Author(s):  
Mohammad Taghi Ahmadi ◽  
Ahmad Razmdideh ◽  
Seyed Saeid Rahimian Koloor ◽  
Michal Petrů
Keyword(s):  
Boron Nitride ◽  
Band Gap ◽  
Density Functional ◽  
Hexagonal Boron Nitride ◽  
Tight Binding ◽  
Band Gap Energy ◽  
Specific Structure ◽  
Partial Substitution ◽  
Generalized Gradient ◽  
Complete Replacement

The absence of a band gap in graphene is a hindrance to its application in electronic devices. Alternately, the complete replacement of carbon atoms with B and N atoms in graphene structures led to the formation of hexagonal boron nitride (h-BN) and caused the opening of its gap. Now, an exciting possibility is a partial substitution of C atoms with B and N atoms in the graphene structure, which caused the formation of a boron nitride composite with specified stoichiometry. BC2N nanotubes are more stable than other triple compounds due to the existence of a maximum number of B–N and C–C bonds. This paper focused on the nearest neighbor’s tight-binding method to explore the dispersion relation of BC2N, which has no chemical bond between its carbon atoms. More specifically, the band dispersion of this specific structure and the effects of energy hopping in boron–carbon and nitrogen–carbon atoms on the band gap are studied. Besides, the band structure is achieved from density functional theory (DFT) using the generalized gradient approximations (GGA) approximation method. This calculation shows that this specific structure is semimetal, and the band gap energy is 0.167 ev.

Small Al and Ga clusters trapped inside the Bucky-ball (C60) — A DFT study

2017 ◽  
Vol 31 (12) ◽  
pp. 1750092 ◽  
Author(s):  
Shobhna Dhiman ◽  
Ranjan Kumar ◽  
Keya Dharamvir
Keyword(s):  
Density Functional ◽  
Mulliken Charge ◽  
Dopant Atom ◽  
Generalized Gradient ◽  
Structural And Electronic Properties ◽  
Charge Analysis ◽  
Vertical Electron Affinity ◽  
Dopant Atoms ◽  
Ground State Structures ◽  
Homo Lumo

In the present paper, we have done a systematic study of structural and electronic properties of endohedrally doped C[Formula: see text] with Al and Ga atoms using density functional theory (DFT) with the help of Spanish initiative for electronic simulation with thousands of atoms (SIESTA) package in the generalized gradient approximation (GGA). The parameters calculated are binding energy/dopant atom, vertical ionization potential (VIP), vertical electron affinity (VEA), HOMO–LUMO gap and charge transfer. The stabilized ground state structures of Al[Formula: see text]@C[Formula: see text] ([Formula: see text]–10) and Ga[Formula: see text]@C[Formula: see text] ([Formula: see text]–10) show that a maximum of nine Al or Ga atoms can be encapsulated in C[Formula: see text] without distorting the cage significantly. Mulliken charge analysis shows an electron transfer from the metal dopant to the cage surface, except for Al[Formula: see text] ([Formula: see text]–10). The endohedral metal clusters adopt a more compact shape when inside C[Formula: see text], compared to its free-state configuration and its symmetry. The study of HOMO–LUMO gap reveals that the gap decreases with the increase in number of dopant atoms inside C[Formula: see text].

Characterization of GaN/Si Using Capacitance Spectroscopies

2006 ◽  
Vol 955 ◽  
Author(s):  
Steven R. Smith ◽  
John C. Roberts ◽  
P. Rajagopal ◽  
J. W. Cook ◽  
E. L. Piner ◽  
...  
Keyword(s):  
Response Time ◽  
Uv Light ◽  
Negative Response ◽  
Optical Measurements ◽  
Bandgap Energy ◽  
Admittance Spectroscopy ◽  
Interesting Phenomenon ◽  
Si Substrates ◽  
Three Samples ◽  
Lower Temperature

ABSTRACTLayers of GaN deposited on Si substrates have been studied using Thermal Admittance Spectroscopy (TAS) and Optical Admittance Spectroscopy (OAS). Transparent front-side contacts were used to facilitate the optical measurements. Six specimens were cut from the same location in two different wafers, and three samples were randomly chosen from other growths. A shallow level at EC − 0.051 eV was found in all the specimens using TAS. In some specimens this peak was asymmetric, indicating more than one level near this energy. Deeper levels were also seen in the high-temperature portion of the spectra, but were poorly resolved in most specimens. Illuminating the specimen with UV light at 25 K resulted in the thermal position of the peak shifting to a lower temperature, and hence, the calculated energy, of the peak shifting lower. The amplitude of the peak also decreased. Transient OAS measurements revealed the interesting phenomenon of negative persistent photo conductance at room temperature in some of the specimens when the illumination photon energy was less than the bandgap. The negative response time was very short. At lower temperatures, below 100 K, the negative response diminished, but the response time was still short. At wavelengths above the bandgap energy, normal transient response was seen, with a longer time constant.

THEORETICAL STUDY OF THE BAND GAP OF SrSe AND SrTe IN GW APPROXIMATION

2011 ◽  
Vol 25 (23) ◽  
pp. 1905-1914
Author(s):  
XIAO LING ZHU ◽  
HONG ZHANG ◽  
XIN LU CHENG
Keyword(s):  
Band Gap ◽  
Density Functional ◽  
Theoretical Study ◽  
Generalized Gradient ◽  
Gw Approximation ◽  
Functional Theory ◽  
The Density Functional Theory ◽  
Structural And Electronic Properties ◽  
Experimental Values ◽  
Interaction Approximation

Using the first-principles pseudopotential method within a generalized gradient approximation of the density functional theory, the structural and electronic properties of SrSe and SrTe have been studied. The calculated lattice parameters are in excellent agreement with experimental values, whereas the error in the minimum gap value is as high as 43.25% in SrSe . To get reliable band gap values of SrSe and SrTe , we employ the GW (G is the Green's function and W is the screened Coulomb interaction) approximation method. The result in GW approximation improves the band gap value of the SrSe greatly and agrees with the value of experimental measurement.

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