scholarly journals A 5-bit X-band GaN HEMT-Based Phase Shifter

Electronics ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 658
Author(s):  
Hsien-Chin Chiu ◽  
Chun-Ming Chen ◽  
Li-Chun Chang ◽  
Hsuan-Ling Kao
Keyword(s):  
Phase Shifter ◽  
Phase Error ◽  
High Electron Mobility Transistor ◽  
Primary Phase ◽  
High Electron ◽  
Frequency Range ◽  
Amplitude Error ◽  
X Band ◽  
High Pass ◽  
Rms Amplitude

In this study, we propose a 5-bit X-band gallium nitride (GaN) high electron mobility transistor (HEMT)-based phased shifter monolithic microwave integrated circuit for a phased-array technique. The design includes high-pass/low-pass networks for the 180° phase bit, two high-pass/bandpass networks separated for the 45° and 90° phase bits, and two transmission lines based on traveling wave switch and capacitive load networks that are separated for the 11.25° and 22.5° phase bits. The state-to-state variation in the insertion loss is 11.8 ± 3.45 dB, and an input/output return loss of less than 8 dB was obtained in a frequency range of 8–12 GHz. Moreover, the phase shifter achieved a low root mean square (RMS) phase error and RMS amplitude error of 6.23° and 1.15 dB, respectively, under the same frequency range. The measured input-referred P1dB of the five primary phase shift states were larger than 29 dBm at 8 GHz. The RMS phase error and RMS amplitude error slightly increased when the temperature increased from 25 to 100 °C. The on-chip phase shifter exhibited no dc power consumption and occupied an area of 2 × 3 mm2.

scholarly journals A 7.5–9 GHz GaAs Two-Channel Multi-Function Chip

Electronics ◽  
2019 ◽  
Vol 8 (4) ◽  
pp. 395 ◽  
Author(s):  
Shancheng Zhou ◽  
Shouli Zhou ◽  
Jingle Zhang ◽  
Jianmin Wu ◽  
Haiqing Yang ◽  
...  
Keyword(s):  
Return Loss ◽  
Phase Shifter ◽  
Phase Error ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Attenuation Characteristic ◽  
Array Calibration ◽  
Digital Phase Shifter ◽  
And Control ◽  
Better Than

Based on the 0.5 μm GaAs enhancement/depletion (E/D) Pseudomorphic High Electron Mobility Transistor (pHEMT) process, a 7.5–9 GHz two-channel amplitude phase control multi-function chip (MFC) was developed successfully. The chip was integrated with a 6-bit digital phase shifter, a 6-bit digital attenuator, and a single pole single throw (SPST) switch in each channel. A design for the absorptive SPST switch is deployed to optimize the return loss and control channel array calibration. In the 8 dB and 16 dB attenuation bit, a switched-path-type topology is employed in order to obtain a good flatness of attenuation characteristic and achieve low additive phase shift. A 27-bit serial-to-parallel converter (SPC) was introduced to decrease the control lines and pads of the chip, and the power consumption was less than 70 mW. The measurement result shows that the insertion loss is less than −13 dB and the return loss is better than −19 dB. In both channels, the 64-state root mean square (RMS) errors of the phase shifter is less than 2° and the RMS parasitic amplitude error is less than 0.2 dB. The RMS attenuation error is less than 0.45 dB and the RMS parasitic phase error is less than 2.4°. The size of the chip is 3.5 mm × 4.5 mm.

0.8–8 GHz 4-bit MMIC phase shifter for T/R modules

2015 ◽  
Vol 7 (3-4) ◽  
pp. 317-326
Author(s):  
Mauro Ferrari ◽  
Luca Piattella
Keyword(s):  
Insertion Loss ◽  
Phase Shifter ◽  
Phase Error ◽  
Design Approach ◽  
Test Results ◽  
Amplitude Error ◽  
High Pass

This paper presents the design approach and test results of a full passive, decade bandwidth GaAs MMIC, composed by a phase shifter (PS) with a cascaded absorptive single pole double throw switch, suitable for transmitter/receiver modules in active electronically scanned array. The proposed PS – fabricated using a UMS GaAs 0.25 PHEMT process – combines all-pass filters with high-pass filters, in order to provide less than 13 dB insertion loss, less than ±20° phase error and less than ±2.5 dB amplitude error in the 0.8–8 GHz bandwidth.

scholarly journals Bandwidth Improvement of MMIC Single-Pole-Double-Throw Passive HEMT Switches with Radial Stubs in Impedance-Transformation Networks

Electronics ◽  
2020 ◽  
Vol 9 (2) ◽  
pp. 270
Author(s):  
Yi-Fan Tsao ◽  
Joachim Würfl ◽  
Heng-Tung Hsu
Keyword(s):  
Insertion Loss ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Conventional Approach ◽  
High Electron ◽  
Frequency Range ◽  
Fractional Bandwidth ◽  
High Electron Mobility ◽  
State Capacitance ◽  
Better Than

In this paper, we propose a new configuration for improving the isolation bandwidth of MMIC single-pole-double-throw (SPDT) passive high-electron-mobility transistor (HEMT) switches operating at millimeter frequency range. While the conventional configuration adopted open-stub loading for compensation of the off-state capacitance, radial stubs were introduced in our approach to improve the operational bandwidth of the SPDT switch. Implemented in 0.15 m GaAs pHEMT technology, the proposed configuration exhibited a measured insertion loss of less than 2.5 dB with better than 30 dB isolation level over the frequency range from 33 GHz to 44 GHz. In terms of the bandwidth of operation, the proposed configuration achieved a fractional bandwidth of 28.5% compared to that of 12.3% for the conventional approach. Such superior bandwidth performance is mainly attributed to the less frequency dependent nature of the radial stubs.

High-power monolithic AlGaN/GaN high electron mobility transistor switches

2009 ◽  
Vol 1 (4) ◽  
pp. 339-345 ◽  
Author(s):  
Vincenzo Alleva ◽  
Andrea Bettidi ◽  
Walter Ciccognani ◽  
Marco De Dominicis ◽  
Mauro Ferrari ◽  
...  
Keyword(s):  
Insertion Loss ◽  
High Power ◽  
Integrated Circuit ◽  
State Of The Art ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Monolithic Microwave Integrated Circuit ◽  
X Band ◽  
Power Handling Capability ◽  
Better Than

This work presents the design, fabrication, and test of X-band and 2–18 GHz wideband high-power single pole double throw (SPDT) monolithic microwave integrated circuit (MMIC) switches in microstrip gallium nitride (GaN) technology. Such switches have demonstrated state-of-the-art performances and RF fabrication yields better than 65%. In particular, the X-band switch exhibits 1 dB insertion loss, better than 37 dB isolation, and a power handling capability better than 39 dBm at a 1 dB insertion loss compression point; the wideband switch shows an insertion loss lower than 2.2 dB, better than 25 dB isolation, and an insertion loss compression of 1 dB at an input drive higher than 38.5 dBm in the entire bandwidth.

scholarly journals A wideband cryogenic microwave low-noise amplifier

2020 ◽  
Vol 11 ◽  
pp. 1484-1491
Author(s):  
Boris I Ivanov ◽  
Dmitri I Volkhin ◽  
Ilya L Novikov ◽  
Dmitri K Pitsun ◽  
Dmitri O Moskalev ◽  
...  
Keyword(s):  
Power Dissipation ◽  
Coplanar Waveguide ◽  
Noise Temperature ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
High Electron ◽  
Frequency Range ◽  
Noise Amplifier ◽  
On Chip

A broadband low-noise four-stage high-electron-mobility transistor amplifier was designed and characterized in a cryogen-free dilution refrigerator at the 3.8 K temperature stage. The obtained power dissipation of the amplifier is below 20 mW. In the frequency range from 6 to 12 GHz its gain exceeds 30 dB. The equivalent noise temperature of the amplifier is below 6 K for the presented frequency range. The amplifier is applicable for any type of cryogenic microwave measurements. As an example we demonstrate here the characterization of the superconducting X-mon qubit coupled to an on-chip coplanar waveguide resonator.

5 bit, silicon-based, X-band phase shifter using a hybrid pi/t high-pass/low-pass topology

2008 ◽  
Vol 2 (1) ◽  
pp. 19-22 ◽  
Author(s):  
M.A. Morton ◽  
J.D. Cressler ◽  
J.P. Comeau ◽  
J. Papapolymerou ◽  
M. Mitchell
Keyword(s):  
Phase Shifter ◽  
X Band ◽  
Low Pass ◽  
Silicon Based ◽  
High Pass

scholarly journals Side Effects in a HEMT Performance with InAlN/GaN

2015 ◽  
Vol 15 (2) ◽  
pp. 249
Author(s):  
Z. Kourdi ◽  
B. Bouazza ◽  
A. Guen-Bouazza ◽  
M. Khaouani
Keyword(s):  
Side Effects ◽  
Current Density ◽  
High Frequency ◽  
Density Ratio ◽  
High Electron Mobility Transistor ◽  
Maximum Efficiency ◽  
High Electron ◽  
X Band ◽  
Cutting Frequency ◽  
Gan Heterostructure

<p class="Abstract">We present a simulation of a HEMT (high electron mobility transistor) structure. We extract the device characteristics through the analysis of DC, AC and high frequency regimes, as shown in this paper. This work demonstrates the optimal device with a gate length of 30<span style="text-decoration: underline;"> nm</span>, and InAlN/GaN heterostructure for minimizing side effects. The simulated with Silvaco software of the HEMT devices with the materials InAlN show very good scalability in different application. We have demonstrated an excellent current density, as high as 644 mA/mm, a peak extrinsic transconductance of 710 mS/mm at V<sub>DS</sub>=2 <span style="text-decoration: underline;">V</span>, and cutting frequency cutoffs of 385 GHZ, maximum frequency of 810 GHz, maximum efficiency of 23% for x-Band, maximum breakdown voltage of 365 <span style="text-decoration: underline;">V</span>, and an ON/OFF current density ratio higher than 8 x 10<sup>8</sup>. These values were determined through the simulation by hydrodynamics models, which makes that optimize the design is the future of this technology.</p>

scholarly journals GaN low-noise X-band MMIC amplifier.

2021 ◽  
Vol 2021 (2) ◽  
Author(s):  
E. Kudabay ◽  
◽  
A. Salikh ◽  
V.A. Moseichuk ◽  
A. Krivtsun ◽  
...  
Keyword(s):  
Output Power ◽  
Integrated Circuit ◽  
Noise Figure ◽  
Supply Voltage ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Common Source ◽  
High Electron ◽  
Monolithic Integrated Circuit ◽  
X Band

The purpose of this paper is to design a microwave monolithic integrated circuit (MMIC) for low noise amplifier (LNA) X-band (7-12 GHz) based on technology of gallium nitride (GaN) high electron mobility transistor (HEMT) with a T-gate, which has 100 nm width, on a silicon (Si) semi-insulating substrate of the OMMIC company. The amplifier is based on common-source transistors with series feedback, which was formed by high-impedance transmission line, and with parallel feedback to match noise figure and power gain. The key characteristics of an LNA are noise figure and gain. However, in this paper, it was decided to design the LNA, which should have a good margin in terms of input and output power. As a result, GaN technology was chosen, which has a higher noise figure compared to other technologies, but eliminates the need for an input power limiter, which in turn significantly increases the overall noise figure. As a result LNA MMIC was developed with the following characteristics: noise figure less than 1.6 dB, small-signal gain more than 20 dB, return loss better than -13 dB and output power more than 19 dBm with 1 dB compression in the range from 7 to 12 GHz in dimensions 2x1.5 mm², which has a supply voltage of 8 V and a current consumption of less than 70 mA. However, it should be said that LNA was only modeled in the AWR DE.

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