0.8–8 GHz 4-bit MMIC phase shifter for T/R modules

This paper presents the design approach and test results of a full passive, decade bandwidth GaAs MMIC, composed by a phase shifter (PS) with a cascaded absorptive single pole double throw switch, suitable for transmitter/receiver modules in active electronically scanned array. The proposed PS – fabricated using a UMS GaAs 0.25 PHEMT process – combines all-pass filters with high-pass filters, in order to provide less than 13 dB insertion loss, less than ±20° phase error and less than ±2.5 dB amplitude error in the 0.8–8 GHz bandwidth.

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A 5-bit X-band GaN HEMT-Based Phase Shifter

Electronics ◽

10.3390/electronics10060658 ◽

2021 ◽

Vol 10 (6) ◽

pp. 658

Author(s):

Hsien-Chin Chiu ◽

Chun-Ming Chen ◽

Li-Chun Chang ◽

Hsuan-Ling Kao

Keyword(s):

Phase Shifter ◽

Phase Error ◽

High Electron Mobility Transistor ◽

Primary Phase ◽

High Electron ◽

Frequency Range ◽

Amplitude Error ◽

X Band ◽

High Pass ◽

Rms Amplitude

In this study, we propose a 5-bit X-band gallium nitride (GaN) high electron mobility transistor (HEMT)-based phased shifter monolithic microwave integrated circuit for a phased-array technique. The design includes high-pass/low-pass networks for the 180° phase bit, two high-pass/bandpass networks separated for the 45° and 90° phase bits, and two transmission lines based on traveling wave switch and capacitive load networks that are separated for the 11.25° and 22.5° phase bits. The state-to-state variation in the insertion loss is 11.8 ± 3.45 dB, and an input/output return loss of less than 8 dB was obtained in a frequency range of 8–12 GHz. Moreover, the phase shifter achieved a low root mean square (RMS) phase error and RMS amplitude error of 6.23° and 1.15 dB, respectively, under the same frequency range. The measured input-referred P1dB of the five primary phase shift states were larger than 29 dBm at 8 GHz. The RMS phase error and RMS amplitude error slightly increased when the temperature increased from 25 to 100 °C. The on-chip phase shifter exhibited no dc power consumption and occupied an area of 2 × 3 mm2.

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Broadband Low Phase Error Phase Shifter Using High-Pass Network With a Coupled Line Section

IEEE Microwave and Wireless Components Letters ◽

10.1109/lmwc.2015.2496787 ◽

2015 ◽

Vol 25 (12) ◽

pp. 775-777 ◽

Cited By ~ 5

Author(s):

Po-Sheng Huang ◽

Hsin-Chia Lu

Keyword(s):

Phase Shifter ◽

Phase Error ◽

Coupled Line ◽

Line Section ◽

High Pass

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Micro-Strip Line 90∘ Phase Shifter with Double Ground Slots for D-Band Applications

Journal of Circuits System and Computers ◽

10.1142/s021812661850192x ◽

2018 ◽

Vol 27 (12) ◽

pp. 1850192 ◽

Cited By ~ 1

Author(s):

Jiang Luo ◽

Jin He ◽

Pengwei Chen ◽

Hao Wang ◽

Sheng Chang ◽

...

Keyword(s):

Insertion Loss ◽

Return Loss ◽

Phase Shifter ◽

Phase Error ◽

Core Area ◽

Strip Line ◽

Wireless Applications ◽

Small Core ◽

Sige Bicmos ◽

Strip Lines

This paper proposes a novel double-ground-slot (DGS) structure for designing the micro-strip lines 90[Formula: see text] phase shifter operating in D-band. The DGS phase shifter is implemented in a 0.13-[Formula: see text]m SiGe BiCMOS and has a small core area of 180[Formula: see text][Formula: see text]m [Formula: see text] 130[Formula: see text][Formula: see text]m including all testing pads. It exhibits measured insertion loss of 1.9[Formula: see text]dB, return loss of 26[Formula: see text]dB, and phase error of 4.2[Formula: see text] at 155[Formula: see text]GHz. The proposed DGS 90[Formula: see text] phase shifter demonstrates superior performances and therefore has potential to be used in highly-integrated D-band wireless applications.

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РАЗРАБОТКА СВЧ МОНОЛИТНЫХ ИНТЕГРАЛЬНЫХ СХЕМ МИЛЛИМЕТРОВОГО ДИАПАЗОНА НА ОСНОВЕ GAAS ДЛЯ ПРИМЕНЕНИЯ В СОВРЕМЕННЫХ ИНФОРМАЦИОННОКОММУНИКАЦИОННЫХ СИСТЕМАХ НОВОГО ПОКОЛЕНИЯ (5G)

Nanoindustry Russia ◽

10.22184/1993-8578.2020.13.3s.321.324 ◽

2020 ◽

Vol 96 (3s) ◽

pp. 321-324

Author(s):

Е.В. Ерофеев ◽

Д.А. Шишкин ◽

В.В. Курикалов ◽

А.В. Когай ◽

И.В. Федин

Keyword(s):

Output Power ◽

Power Amplifier ◽

Integrated Circuit ◽

Phase Shifter ◽

Phase Error ◽

Microwave Integrated Circuit ◽

Gain Compression ◽

Monolithic Microwave Integrated Circuit ◽

And Performance ◽

Power Capability

В данной работе представлены результаты разработки СВЧ монолитной интегральной схемы шестиразрядного фазовращателя и усилителя мощности диапазона частот 26-30 ГГц. СКО ошибки по фазе и амплитуде фазовращателя составили 1,2 град. и 0,13 дБ соответственно. Максимальная выходная мощность и КПД по добавленной мощности усилителя в точке сжатия Ку на 1 дБ составили 30 дБм и 20 % соответственно. This paper describes the design, layout, and performance of 6-bit phase shifter and power amplifier monolithic microwave integrated circuit (MMIC), 26-30 GHz band. Phase shifter MMIC has RMS phase error of 1.2 deg. And RMD amplitude error is 0.13 dB. MMIC power amplifier has output power capability of 30 dBm at 1 dB gain compression (P-1dB) and PAE of 20 %.

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Temperature Characterization of Liquid Crystal Dielectric Image Line Phase Shifter for Millimeter-Wave Applications

Crystals ◽

10.3390/cryst11010063 ◽

2021 ◽

Vol 11 (1) ◽

pp. 63

Author(s):

Henning Tesmer ◽

Rani Razzouk ◽

Ersin Polat ◽

Dongwei Wang ◽

Rolf Jakoby ◽

...

Keyword(s):

Liquid Crystal ◽

Millimeter Wave ◽

Insertion Loss ◽

Phase Shifter ◽

Ground Plane ◽

Temperature Dependent ◽

Differential Phase ◽

Dependent Behavior ◽

The Impact ◽

Temperature Dependent Behavior

In this paper we investigate the temperature dependent behavior of a liquid crystal (LC) loaded tunable dielectric image guide (DIG) phase shifter at millimeter-wave frequencies from 80 GHz to 110 GHz for future high data rate communications. The adhesive, necessary for precise fabrication, is analyzed before temperature dependent behavior of the component is shown, using the nematic LC-mixture GT7-29001. The temperature characterization is conducted by changing the temperature of the LC DIG’s ground plane between −10∘C and 80 ∘C. The orientation of the LC molecules, and therefore the effective macroscopic relative permittivity of the DIG, is changed by inserting the temperature setup in a fixture with rotatable magnets. Temperature independent matching can be observed, while the insertion loss gradually increases with temperature for both highest and lowest permittivity of the LC. At 80 ∘C the insertion loss is up to 1.3dB higher and at −10∘C it is 0.6dB lower than the insertion loss present at 20 ∘C. In addition, the achievable differential phase is reduced with increasing temperature. The impact of molecule alignment to this reduction is shown for the phase shifter and an estimated 85% of the anisotropy is still usable with an LC DIG phase shifter when increasing the temperature from 20 ∘C to 80 ∘C. Higher reduction of differential phase is present at higher frequencies as the electrical length of the phase shifter increases. A maximum difference in differential phase of 72∘ is present at 110 GHz, when increasing the temperature from 20 ∘C to 80 ∘C. Nevertheless, a well predictable, quasi-linear behavior can be observed at the covered temperature range, highlighting the potential of LC-based dielectric components at millimeter wave frequencies.

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Phased-array antennas using novel PSoC-controlled phase shifters for wireless applications

International Journal of Microwave and Wireless Technologies ◽

10.1017/s1759078721001094 ◽

2021 ◽

pp. 1-13

Author(s):

Aparna B. Barbadekar ◽

Pradeep M. Patil

Keyword(s):

Insertion Loss ◽

Phase Shifter ◽

Phased Array ◽

Phase Shifters ◽

Control Circuit ◽

Power Divider ◽

Phased Array Antenna ◽

Phased Array Antennas ◽

Array Antennas ◽

Low Insertion Loss

Abstract The paper proposes a system consisting of novel programmable system on chip (PSoC)-controlled phase shifters which in turn guides the beam of an antenna array attached to it. Four antennae forming an array receive individual inputs from the programmable phase shifters (IC 2484). The input to the PSoC-based phase shifter is provided from an optimized 1:4 Wilkinson power divider. The antenna consists of an inverted L-shaped dipole on the front and two mirrored inverted L-shaped dipoles mounted on a rectangular conductive structure on the back which resonates in the ISM/Wi-Fi band (2.40–2.48 GHz). The power divider is designed to provide the feed to the phase shifter using a beamforming network while ensuring good isolation among the ports. The power divider has measured S11, S21, S31, S41, and S51 to be −14, −6.25, −6.31, −6.28, and −6.31 dB, respectively at a frequency of 2.45 GHz. The ingenious controller is designed in-house using a PSoC microcontroller to regulate the control voltage of individual phase shifter IC and generate progressive phase shifts. To validate the calibration of the in-house designed control circuit, the phased array is simulated using $s_p^2$ touchstone file of IC 2484. This designed control circuit exhibits low insertion loss close to −8.5 dB, voltage standing wave ratio of 1.58:1, and reflection coefficient (S11) is −14.36 dB at 2.45 GHz. Low insertion loss variations confirm that the phased-array antenna gives equal amplitude and phase. The beamforming radiation patterns for different scan angles (30, 60, and 90°) for experimental and simulated phased-array antenna are matched accurately showing the accuracy of the control circuit designed. The average experimental and simulated gain is 13.03 and 13.48 dBi respectively. The in-house designed controller overcomes the primary limitations associated with the present electromechanical phased array such as cost weight, size, power consumption, and complexity in design which limits the use of a phased array to military applications only. The current study with novel design and enhanced performance makes the system worthy of the practical use of phased-array antennas for common society at large.

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