scholarly journals A 7.5–9 GHz GaAs Two-Channel Multi-Function Chip

Electronics ◽  
2019 ◽  
Vol 8 (4) ◽  
pp. 395 ◽  
Author(s):  
Shancheng Zhou ◽  
Shouli Zhou ◽  
Jingle Zhang ◽  
Jianmin Wu ◽  
Haiqing Yang ◽  
...  
Keyword(s):  
Return Loss ◽  
Phase Shifter ◽  
Phase Error ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Attenuation Characteristic ◽  
Array Calibration ◽  
Digital Phase Shifter ◽  
And Control ◽  
Better Than

Based on the 0.5 μm GaAs enhancement/depletion (E/D) Pseudomorphic High Electron Mobility Transistor (pHEMT) process, a 7.5–9 GHz two-channel amplitude phase control multi-function chip (MFC) was developed successfully. The chip was integrated with a 6-bit digital phase shifter, a 6-bit digital attenuator, and a single pole single throw (SPST) switch in each channel. A design for the absorptive SPST switch is deployed to optimize the return loss and control channel array calibration. In the 8 dB and 16 dB attenuation bit, a switched-path-type topology is employed in order to obtain a good flatness of attenuation characteristic and achieve low additive phase shift. A 27-bit serial-to-parallel converter (SPC) was introduced to decrease the control lines and pads of the chip, and the power consumption was less than 70 mW. The measurement result shows that the insertion loss is less than −13 dB and the return loss is better than −19 dB. In both channels, the 64-state root mean square (RMS) errors of the phase shifter is less than 2° and the RMS parasitic amplitude error is less than 0.2 dB. The RMS attenuation error is less than 0.45 dB and the RMS parasitic phase error is less than 2.4°. The size of the chip is 3.5 mm × 4.5 mm.

scholarly journals A Ku-Band GaAs Multifunction Transmitter and Receiver Chipset

Electronics ◽  
2020 ◽  
Vol 9 (8) ◽  
pp. 1327
Author(s):  
Hyunkyu Lee ◽  
Younghwan Kim ◽  
Iljin Lee ◽  
Dongkyo Kim ◽  
Kwangwon Park ◽  
...  
Keyword(s):  
Phase Shifter ◽  
Noise Figure ◽  
High Electron Mobility Transistor ◽  
Digital Circuit ◽  
Low Noise ◽  
High Electron ◽  
Chip Area ◽  
Digital Phase Shifter ◽  
Peak Gain ◽  
Ku Band

This paper presents a Ku-band monolithic multifunction transmitter and receiver chipset fabricated in 0.25-μm GaAs pseudomorphic high-electron mobility transistor technology. The chipset achieves a high level of integration, including a 4-bit 360° digital phase shifter, 5-bit 15.5-dB digital attenuator, amplifier and 9-bit digital serial-to-parallel converter for digital circuit control. Since the multifunction chipset includes a medium power amplifier and a low-noise amplifier, it features high P1dB and low noise figures over the full Ku-band frequencies. The multifunction transmitter shows a peak gain of 16.5 dB with output P1dB of 19.2 dBm at 15 GHz. The multifunction receiver shows a peak gain of 17.3 dB with noise figure of 2.5 dB at 15 GHz. The attenuation range is 15.5 dB with a step of 0.5 dB and the phase shift range is 360° with a step of 22.5°. Each chip area of the transmitter and receiver is 4.2 × 2.8 mm2.

scholarly journals A 5-bit X-band GaN HEMT-Based Phase Shifter

Electronics ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 658
Author(s):  
Hsien-Chin Chiu ◽  
Chun-Ming Chen ◽  
Li-Chun Chang ◽  
Hsuan-Ling Kao
Keyword(s):  
Phase Shifter ◽  
Phase Error ◽  
High Electron Mobility Transistor ◽  
Primary Phase ◽  
High Electron ◽  
Frequency Range ◽  
Amplitude Error ◽  
X Band ◽  
High Pass ◽  
Rms Amplitude

In this study, we propose a 5-bit X-band gallium nitride (GaN) high electron mobility transistor (HEMT)-based phased shifter monolithic microwave integrated circuit for a phased-array technique. The design includes high-pass/low-pass networks for the 180° phase bit, two high-pass/bandpass networks separated for the 45° and 90° phase bits, and two transmission lines based on traveling wave switch and capacitive load networks that are separated for the 11.25° and 22.5° phase bits. The state-to-state variation in the insertion loss is 11.8 ± 3.45 dB, and an input/output return loss of less than 8 dB was obtained in a frequency range of 8–12 GHz. Moreover, the phase shifter achieved a low root mean square (RMS) phase error and RMS amplitude error of 6.23° and 1.15 dB, respectively, under the same frequency range. The measured input-referred P1dB of the five primary phase shift states were larger than 29 dBm at 8 GHz. The RMS phase error and RMS amplitude error slightly increased when the temperature increased from 25 to 100 °C. The on-chip phase shifter exhibited no dc power consumption and occupied an area of 2 × 3 mm2.

scholarly journals Bandwidth Improvement of MMIC Single-Pole-Double-Throw Passive HEMT Switches with Radial Stubs in Impedance-Transformation Networks

Electronics ◽  
2020 ◽  
Vol 9 (2) ◽  
pp. 270
Author(s):  
Yi-Fan Tsao ◽  
Joachim Würfl ◽  
Heng-Tung Hsu
Keyword(s):  
Insertion Loss ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Conventional Approach ◽  
High Electron ◽  
Frequency Range ◽  
Fractional Bandwidth ◽  
High Electron Mobility ◽  
State Capacitance ◽  
Better Than

In this paper, we propose a new configuration for improving the isolation bandwidth of MMIC single-pole-double-throw (SPDT) passive high-electron-mobility transistor (HEMT) switches operating at millimeter frequency range. While the conventional configuration adopted open-stub loading for compensation of the off-state capacitance, radial stubs were introduced in our approach to improve the operational bandwidth of the SPDT switch. Implemented in 0.15 m GaAs pHEMT technology, the proposed configuration exhibited a measured insertion loss of less than 2.5 dB with better than 30 dB isolation level over the frequency range from 33 GHz to 44 GHz. In terms of the bandwidth of operation, the proposed configuration achieved a fractional bandwidth of 28.5% compared to that of 12.3% for the conventional approach. Such superior bandwidth performance is mainly attributed to the less frequency dependent nature of the radial stubs.

High-power monolithic AlGaN/GaN high electron mobility transistor switches

2009 ◽  
Vol 1 (4) ◽  
pp. 339-345 ◽  
Author(s):  
Vincenzo Alleva ◽  
Andrea Bettidi ◽  
Walter Ciccognani ◽  
Marco De Dominicis ◽  
Mauro Ferrari ◽  
...  
Keyword(s):  
Insertion Loss ◽  
High Power ◽  
Integrated Circuit ◽  
State Of The Art ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Monolithic Microwave Integrated Circuit ◽  
X Band ◽  
Power Handling Capability ◽  
Better Than

This work presents the design, fabrication, and test of X-band and 2–18 GHz wideband high-power single pole double throw (SPDT) monolithic microwave integrated circuit (MMIC) switches in microstrip gallium nitride (GaN) technology. Such switches have demonstrated state-of-the-art performances and RF fabrication yields better than 65%. In particular, the X-band switch exhibits 1 dB insertion loss, better than 37 dB isolation, and a power handling capability better than 39 dBm at a 1 dB insertion loss compression point; the wideband switch shows an insertion loss lower than 2.2 dB, better than 25 dB isolation, and an insertion loss compression of 1 dB at an input drive higher than 38.5 dBm in the entire bandwidth.

scholarly journals 26 GHz phase shifters for multi-beam nolen matrix towards fifth generation (5G) technology

2019 ◽  
Vol 8 (3) ◽  
pp. 1028-1035
Author(s):  
Norhudah Seman ◽  
Nazleen Syahira Mohd Suhaimi ◽  
Tien Han Chua
Keyword(s):  
Dielectric Constant ◽  
Microstrip Line ◽  
Return Loss ◽  
Phase Shifter ◽  
Low Cost ◽  
Phase Shifters ◽  
Substrate Thickness ◽  
Fifth Generation ◽  
Compact Size ◽  
Better Than

This paper presents the designs of phase shifters for multi-beam Nolen matrix towards the fifth generation (5G) technology at 26 GHz. The low-cost, lightweight and compact size 0° and 45° loaded stubs and chamfered 90°, 135° and 180° Schiffman phase shifters are proposed at 26 GHz. An edge at a corner of the 50 Ω microstrip line Schiffman phase shifter is chamfered to reduce the excess capacitance and unwanted reflection. However, the Schiffman phase shifter topology is not relevant to be applied for the phase shifter less than 45° as it needs very small arc bending at 26 GHz. The stubs are loaded to the phase shifter in order to obtain electrical lengths, which are less than 45°. The proposed phase shifters provide return loss better than 10 dB, insertion loss of -0.97 dB and phase difference imbalance of ± 4.04° between 25.75GHz and 26.25 GHz. The Rogers RT/duroid 5880 substrate with dielectric constant of 2.2 and substrate thickness of 0.254 mm is implemented in the designs.

Full integrated process to manufacture RF-MEMS and MMICs on GaN/Si substrate

2010 ◽  
Vol 2 (3-4) ◽  
pp. 333-339 ◽  
Author(s):  
Flavia Crispoldi ◽  
Alessio Pantellini ◽  
Simone Lavanga ◽  
Antonio Nanni ◽  
Paolo Romanini ◽  
...  
Keyword(s):  
Insertion Loss ◽  
Rf Mems ◽  
Noise Figure ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
High Electron ◽  
Mems Devices ◽  
Frequency Range ◽  
Gan Hemt ◽  
Better Than

Radio Frequency Micro-Electro-Mechanical System (RF-MEMS) represents a feasible solution to obtain very low power dissipation and insertion loss, very high isolation and linearity switch with respect to “solid state” technologies. In this paper, we demonstrate the full integration of RF-MEMS switches in the GaN-HEMT (Gallium Nitride/High Electron Mobility Transistor) fabrication line to develop RF-MEMS devices and LNA-MMIC (Low Noise Amplifier/Monolithic Microwave Integrated Circuit) prototype simultaneously in the same GaN wafer. In particular, two different coplanar wave (CPW) LNAs and a series of discrete RF-MEMS in ohmic-series and capacitive-shunt configuration have been fabricated. RF-MEMS performances reveal an insertion loss and isolation better than 1 and 15 dB, respectively, in the frequency range 20–50 GHz in the case of pure capacitive shunt switches and in the frequency range 5–35 GHz for the ohmic-series switches. Moreover, the GaN HEMT device shows an Fmax of about 38 GHz and a power density of 6.5 W/mm, while for the best LNA-MMIC we have obtained gain better than 12 dB at 6–10 GHz with a noise figure of circa 4 dB, demonstrating the integration achievability.

Two Broadband GaN MMIC Power Amplifiers for EW Systems

2009 ◽  
Vol 615-617 ◽  
pp. 975-978 ◽  
Author(s):  
M. Angeles Gonzalez-Garrido ◽  
Jesus Grajal ◽  
Pablo Cubilla ◽  
Claudio Lanzieri ◽  
Antonio Cetronio
Keyword(s):  
Power Amplifiers ◽  
Continuous Wave ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Frequency Range ◽  
Power Performance ◽  
Process Technology ◽  
Output Stage ◽  
Microstrip Technology ◽  
Better Than

This paper describes and evaluates two MMIC broadband high power amplifiers in the frequency band 2-6 GHz in microstrip technology. These amplifiers have scalable output-stage periphery of 4 and 8 mm. The amplifiers are based on 1 mm AlGaN/GaN high electron mobility transistor (HEMT) technology on SiC substrate. They were fabricated in the European foundry SELEX Sistemi Integrati, which has a gate process technology of 0.5 μm. The 4 mm amplifier has exhibited an output power of 15 W and the 8 mm of 28 W at Vds=25 V in pulsed conditions. The best power performance in continuous wave are 10.5 W and 15 W for 4 mm and 8 mm, respectively. Better than 20% PAE over the 2-6 GHz frequency range is achieved in CW.

scholarly journals Multi-Octave bandwidth, 100 W GaN power amplifier using planar transmission line transformer

2017 ◽  
Vol 9 (6) ◽  
pp. 1261-1269 ◽  
Author(s):  
Mhd Tareq Arnous ◽  
Zihui Zhang ◽  
Felix Rautschke ◽  
Georg Boeck
Keyword(s):  
Power Amplifier ◽  
Insertion Loss ◽  
High Power ◽  
Return Loss ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Matching Networks ◽  
Measurement Results ◽  
Saturated Output Power

In this paper, design, implementation, and experimental results of efficient, high-power, and multi-octave gallium nitride-high electron mobility transistor power amplifier are presented. To overcome the low optima source/load impedances of a large transistor, various topologies of a broadside-coupled impedance transformer are simulated, implemented, and measured. The used transformer has a flat measured insertion loss of 0.5 dB and a return loss higher than 10 dB over a decade bandwidth (0.4–4 GHz). The transformer is integrated at the drain and gate sides of the transistor using pre-matching networks to transform the complex optima source/load impedances to the appropriate impedances of the transformer plane. The measurement results illustrate a saturated output power ranged between 80 and 115 W with an average drain efficiency of 57% and gain of 10.5 dB across 0.6–2.6 GHz.

Optimizing n+ Ohmic Contacts on GaAs for HemtS

1992 ◽  
Vol 260 ◽  
Author(s):  
H. M. Harris ◽  
J. R. Farley
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
High Performance ◽  
Ohmic Contacts ◽  
Layer Structure ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Alloy Process ◽  
Spacer Layer ◽  
Better Than

ABSTRACTLow ohmic contact resistance is essential for high performance microwave and millimeter wave transistors. Rapid thermal processing (RTP) has been used to optimize the ohmic contact resistance of gold - germanium / nickel / gold metallizations on gallium arsenide (GaAs) layers for high electron mobility transistor (HEMT) applications. A HEMT layer structure consisting of a 9000Å buffer layer grown on a semi-insulating substrate followed by a 20Å undoped AlGaAs spacer layer, a 700Å Al0.22Ga0.78 As layer doped at 1.0 × 1018cm-3and a 500Å GaAs cap layer doped at 1.5 × 1018 cm°C to 450°C. Time at temperature was varied from 10 seconds to 1 minute. Optimum conditions for our equipment and layer structure were found to be 365°C for 30 seconds. These conditions produced contact resistances of 0.08 ohm-mm (approximately 2.0 times better than the standard furnace alloy process).

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