scholarly journals Side Effects in a HEMT Performance with InAlN/GaN

2015 ◽  
Vol 15 (2) ◽  
pp. 249
Author(s):  
Z. Kourdi ◽  
B. Bouazza ◽  
A. Guen-Bouazza ◽  
M. Khaouani
Keyword(s):  
Side Effects ◽  
Current Density ◽  
High Frequency ◽  
Density Ratio ◽  
High Electron Mobility Transistor ◽  
Maximum Efficiency ◽  
High Electron ◽  
X Band ◽  
Cutting Frequency ◽  
Gan Heterostructure

<p class="Abstract">We present a simulation of a HEMT (high electron mobility transistor) structure. We extract the device characteristics through the analysis of DC, AC and high frequency regimes, as shown in this paper. This work demonstrates the optimal device with a gate length of 30<span style="text-decoration: underline;"> nm</span>, and InAlN/GaN heterostructure for minimizing side effects. The simulated with Silvaco software of the HEMT devices with the materials InAlN show very good scalability in different application. We have demonstrated an excellent current density, as high as 644 mA/mm, a peak extrinsic transconductance of 710 mS/mm at V<sub>DS</sub>=2 <span style="text-decoration: underline;">V</span>, and cutting frequency cutoffs of 385 GHZ, maximum frequency of 810 GHz, maximum efficiency of 23% for x-Band, maximum breakdown voltage of 365 <span style="text-decoration: underline;">V</span>, and an ON/OFF current density ratio higher than 8 x 10<sup>8</sup>. These values were determined through the simulation by hydrodynamics models, which makes that optimize the design is the future of this technology.</p>

High-power monolithic AlGaN/GaN high electron mobility transistor switches

2009 ◽  
Vol 1 (4) ◽  
pp. 339-345 ◽  
Author(s):  
Vincenzo Alleva ◽  
Andrea Bettidi ◽  
Walter Ciccognani ◽  
Marco De Dominicis ◽  
Mauro Ferrari ◽  
...  
Keyword(s):  
Insertion Loss ◽  
High Power ◽  
Integrated Circuit ◽  
State Of The Art ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Monolithic Microwave Integrated Circuit ◽  
X Band ◽  
Power Handling Capability ◽  
Better Than

This work presents the design, fabrication, and test of X-band and 2–18 GHz wideband high-power single pole double throw (SPDT) monolithic microwave integrated circuit (MMIC) switches in microstrip gallium nitride (GaN) technology. Such switches have demonstrated state-of-the-art performances and RF fabrication yields better than 65%. In particular, the X-band switch exhibits 1 dB insertion loss, better than 37 dB isolation, and a power handling capability better than 39 dBm at a 1 dB insertion loss compression point; the wideband switch shows an insertion loss lower than 2.2 dB, better than 25 dB isolation, and an insertion loss compression of 1 dB at an input drive higher than 38.5 dBm in the entire bandwidth.

scholarly journals Electrical performances of AlInN/GaN HEMTs. A comparison with AlGaN/GaN HEMTs with similar technological process

2011 ◽  
Vol 3 (3) ◽  
pp. 301-309 ◽  
Author(s):  
Olivier Jardel ◽  
Guillaume Callet ◽  
Jérémy Dufraisse ◽  
Michele Piazza ◽  
Nicolas Sarazin ◽  
...  
Keyword(s):  
High Frequency ◽  
Continuous Wave ◽  
High Electron Mobility Transistors ◽  
High Electron ◽  
Power Added Efficiency ◽  
Electron Mobility Transistors ◽  
X Band ◽  
Gan Hemts ◽  
Load Pull ◽  
Interesting Alternative

A study of the electrical performances of AlInN/GaN High Electron Mobility Transistors (HEMTs) on SiC substrates is presented in this paper. Four different wafers with different technological and epitaxial processes were characterized. Thanks to intensive characterizations as pulsed-IV, [S]-parameters, and load-pull measurements from S to Ku bands, it is demonstrated here that AlInN/GaN HEMTs show excellent power performances and constitute a particularly interesting alternative to AlGaN/GaN HEMTs, especially for high-frequency applications beyond the X band. The measured transistors with 250 nm gate lengths from different wafers delivered in continuous wave (cw): 10.8 W/mm with 60% associated power added efficiency (PAE) at 3,5 GHz, 6.6 W/mm with 39% associated PAE at 10.24 GHz, and 4.2 W/mm with 43% associated PAE at 18 GHz.

scholarly journals InAlAs/InGaAs/InP HEMTs с композитным каналом и улучшенными пробивными характеристиками

2019 ◽  
Vol 45 (21) ◽  
pp. 29
Author(s):  
Н.А Малеев ◽  
А.П. Васильев ◽  
А.Г. Кузьменков ◽  
М.А. Бобров ◽  
М.М. Кулагина ◽  
...  
Keyword(s):  
Current Density ◽  
Electron Mobility ◽  
Drain Current ◽  
High Electron Mobility Transistor ◽  
Device Fabrication ◽  
Fabrication Process ◽  
Channel Structure ◽  
Gate Length ◽  
High Electron ◽  
High Electron Mobility

High-electron mobility transistor (HEMT) with improved breakdown characteristics has been developed. Composite InGaAs channel structure was used in combination with fully selective double recess device fabrication process. HEMTs with T-gate length of 120 nm and width 4x30 m demonstrate maximum extrinsic transconductance of 810 mS/mm, maximum drain current density of 460 mA/mm and gate-drain reverse breakdown voltages as high as 8–10 V. Devices cut-off frequency exceed 115 GHz. Because of increased breakdown voltage and fully selective double recess fabrication process designed HEMTs are promising for medium power mm-wave MMIC amplifiers.

scholarly journals Comparison of GAN, SIC, SI Technology for High Frequency and High Efficiency Inverters

2020 ◽  
Vol 184 ◽  
pp. 01012
Author(s):  
Sai Kiran Pullabhatla ◽  
Phaneendra Babu Bobba ◽  
Satyavani Yadlapalli
Keyword(s):  
Output Power ◽  
Electron Mobility ◽  
High Frequency ◽  
Power Efficiency ◽  
High Efficiency ◽  
High Electron Mobility Transistor ◽  
Electronic Systems ◽  
High Electron ◽  
Power Semiconductor ◽  
Efficient Power

Power semiconductor devices plays a major role in efficient power conversion. As we have Silicon (Si), Silicon Carbide (SiC) and Gallium Nitride (GaN) based power devices, GaN technologies are ideal for working in high frequency power electronic systems (in MHz). Because the GaN has superior electron mobility and bandgap than the SiC and Si it has superior characteristics like low conduction losses, high switching rate so that there is better power efficiency than SiC, Si based inverter. Here we are using the Gan based High-Electron-Mobility Transistor (HEMT) and SiC and Si based mosfet in the inverter. The proposed inverter of different topologies is designed to transfer the power at >1MHz range. Comparison of the three different switches is done by the output power and the efficiency of the inverter. This paper presents the SPICE simulation results of the class d and class e inverter of output power 1KW.

scholarly journals GaN low-noise X-band MMIC amplifier.

2021 ◽  
Vol 2021 (2) ◽  
Author(s):  
E. Kudabay ◽  
◽  
A. Salikh ◽  
V.A. Moseichuk ◽  
A. Krivtsun ◽  
...  
Keyword(s):  
Output Power ◽  
Integrated Circuit ◽  
Noise Figure ◽  
Supply Voltage ◽  
High Electron Mobility Transistor ◽  
Low Noise ◽  
Common Source ◽  
High Electron ◽  
Monolithic Integrated Circuit ◽  
X Band

The purpose of this paper is to design a microwave monolithic integrated circuit (MMIC) for low noise amplifier (LNA) X-band (7-12 GHz) based on technology of gallium nitride (GaN) high electron mobility transistor (HEMT) with a T-gate, which has 100 nm width, on a silicon (Si) semi-insulating substrate of the OMMIC company. The amplifier is based on common-source transistors with series feedback, which was formed by high-impedance transmission line, and with parallel feedback to match noise figure and power gain. The key characteristics of an LNA are noise figure and gain. However, in this paper, it was decided to design the LNA, which should have a good margin in terms of input and output power. As a result, GaN technology was chosen, which has a higher noise figure compared to other technologies, but eliminates the need for an input power limiter, which in turn significantly increases the overall noise figure. As a result LNA MMIC was developed with the following characteristics: noise figure less than 1.6 dB, small-signal gain more than 20 dB, return loss better than -13 dB and output power more than 19 dBm with 1 dB compression in the range from 7 to 12 GHz in dimensions 2x1.5 mm², which has a supply voltage of 8 V and a current consumption of less than 70 mA. However, it should be said that LNA was only modeled in the AWR DE.

Polarization Engineering of Al(Ga)N/GaN HEMT Structures for Microwave High Power Applications

2014 ◽  
Vol 806 ◽  
pp. 81-87
Author(s):  
Stephanie Rennesson ◽  
Francois Lecourt ◽  
Nicolas Defrance ◽  
Magdalena Chmielowska ◽  
Sébastien Chenot ◽  
...  
Keyword(s):  
High Power ◽  
Electron Mobility ◽  
High Frequency ◽  
Aluminum Content ◽  
Layer Structure ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Power Density ◽  
Gan Hemt ◽  
Algan Buffer

The aim of this paper is to optimize the epitaxial layer structure of an AlGaN/GaN high electron mobility transistor (HEMT) for high power density at high frequency. The idea is to play on the polarization engineering with the different layers of the epitaxial stack. The influence of the cap and barrier layer thicknesses, the aluminum content in the barrier and the insertion of an AlGaN buffer layer are studied through the electron gas density, electron mobility and sheet resistance. This permits to find out the best trade-off in order to satisfy the requirements for high performances.

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