scholarly journals The Characterization of a Spectrum Splitter of TechSpec AOI 50.0mm Square Hot and Cold Mirrors Using a Halogen Light for a Photovoltaic-Thermoelectric Generator Hybrid

Energies ◽  
2019 ◽  
Vol 12 (3) ◽  
pp. 353 ◽  
Author(s):  
Wahyu H. Piarah ◽  
Zuryati Djafar ◽  
Syafaruddin ◽  
Mustofa

The characterization of a spectrum splitter of both hot and cold mirror, type TechSpec AOI 50.0, using a 50-Watt halogen bulb light has been done. Both the bulb spectrum, prior to and after spectrum splitting, are described in this study to see the degradation of radiation that occurs because partial energy is absorbed by the splitter. This characterization plays an important role in determining the best position of a photovoltaic (PV) and thermoelectric generator (TEG) in a PV-TEG system. The light spectrum was recorded using mini USB spectrometer hardware and Spectragryph version 1.2.8 software as optical spectroscopic software that displays light records coming with wavelength (nm) on the x-axis and light spectrum intensity in arbitrary units (a.u.) on the y-axis. The measurement results show that the light intensity in the visible light region (300–750) nm is more dominant than the intensity in infrared light (>750 nm), so that the PV placement is preferred over TEG. Furthermore, with a cold mirror, PV is more suitable if placed in a position to receive reflected light, while using a hot mirror is more suitable in the position transmitted light. For TEG, it is placed in a position opposite to PV. As a result, the maximum intensity of the PV light spectrum with cold mirrors is 46.52 a.u at a wavelength of 479.6 nm, while with hot mirrors it is 42.07 a.u with a 457.6 nm wavelength. It can be concluded that the value of the light intensity with a cold mirror is better than that with a hot mirror on the visible light (Vis) spectrum, and the current and voltage are equivalent to the results of the radiation energy area. It was proven that the maximum total output of a hybrid PV-TEG system with Cold Mirror is greater than that with Hot Mirror (100.53 > 68.77) × 10−3 µW. Based on the result of this study, it is recommended that further research can be conducted to increase radiation energy and output power in TEG.

2021 ◽  
Author(s):  
Zhifen Guo ◽  
Xin Liu ◽  
Yan Che ◽  
Hongzhu Xing ◽  
Peng Chen

Development of visible-light-induced photocatalytic reactions using molecular oxygen as terminal oxidant is intriguing in view of the current environmental and energy issues. We report herein the synthesis and characterization of...


2020 ◽  
Vol 2020 ◽  
pp. 1-9 ◽  
Author(s):  
N. Cruz-González ◽  
O. Calzadilla ◽  
J. Roque ◽  
F. Chalé-Lara ◽  
J. K. Olarte ◽  
...  

In the last decade, the urgent need to environmental protection has promoted the development of new materials with potential applications to remediate air and polluted water. In this work, the effect of the TiO2 thin layer over MoS2 material in photocatalytic activity is reported. We prepared different heterostructures, using a combination of electrospinning, solvothermal, and spin-coating techniques. The properties of the samples were analyzed by scanning electron microscopy (SEM), transmission electron microscopy (TEM), atomic force microscopy (AFM), X-ray diffraction (XRD), nitrogen adsorption-desorption isotherms, UV-Vis diffuse reflectance spectroscopy (UV-Vis-DRS), and X-ray photoelectron spectroscopy (XPS). The adsorption and photocatalytic activity were evaluated by discoloration of rhodamine B solution. The TiO2-MoS2/TiO2 heterostructure presented three optical absorption edges at 1.3 eV, 2.28 eV, and 3.23 eV. The high adsorption capacity of MoS2 was eliminated with the addition of TiO2 thin film. The samples show high photocatalytic activity in the visible-IR light spectrum.


1998 ◽  
Vol 535 ◽  
Author(s):  
M. Yoshimoto ◽  
J. Saraie ◽  
T. Yasui ◽  
S. HA ◽  
H. Matsunami

AbstractGaAs1–xPx (0.2 <; x < 0.7) was grown by metalorganic molecular beam epitaxy with a GaP buffer layer on Si for visible light-emitting devices. Insertion of the GaP buffer layer resulted in bright photoluminescence of the GaAsP epilayer. Pre-treatment of the Si substrate to avoid SiC formation was also critical to obtain good crystallinity of GaAsP. Dislocation formation, microstructure and photoluminescence in GaAsP grown layer are described. A GaAsP pn junction fabricated on GaP emitted visible light (˜1.86 eV). An initial GaAsP pn diode fabricated on Si emitted infrared light.


2012 ◽  
Vol 62 ◽  
pp. 47-50 ◽  
Author(s):  
Sevan Karabetoglu ◽  
Altug Sisman ◽  
Z. Fatih Ozturk ◽  
Turker Sahin

2012 ◽  
Vol 2012 ◽  
pp. 1-13 ◽  
Author(s):  
Chun-Hung Huang ◽  
Yu-Ming Lin ◽  
I-Kai Wang ◽  
Chun-Mei Lu

A variety of carbon-modified titania powders were prepared by impregnation method using a commercial available titania powder, Hombikat UV100, as matrix material while a range of alcohols from propanol to hexanol were used as precursors of carbon sources. Rising the carbon number of alcoholic precursor molecule, the modified titania showed increasing visible activities ofNOxphotodegradation. The catalyst modified with cyclohexanol exhibited the best activities of 62%, 62%, 59%, and 54% for the totalNOxremoval under UV, blue, green, and red light irradiation, respectively. The high activity with long wavelength irradiation suggested a good capability of photocatalysis in full visible light spectrum. Analysis of UV-visible spectrum indicated that carbon modification promoted visible light absorption and red shift in band gap. XPS spectroscopic analysis identified the existence of carbonate species (C=O), which increased with the increasing carbon number of precursor molecule. Photoluminescence spectra demonstrated that the carbonate species suppressed the recombination rate of electron-hole pair. As a result, a mechanism of visible-light-active photocatalyst was proposed according to the formation of carbonate species on carbon-modified TiO2.


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