scholarly journals New High-Efficiency Resonant O-Type Devices as the Promising Sources of Microwave Power

Energies ◽  
2020 ◽  
Vol 13 (10) ◽  
pp. 2514
Author(s):  
Andrei Baikov ◽  
Olga Baikova
Keyword(s):  
Radio Frequency ◽  
High Power ◽  
Microwave Power ◽  
High Efficiency ◽  
Microwave Energy ◽  
Input Circuit ◽  
Rf Power ◽  
Energy Regeneration ◽  
Microwave Sources ◽  
Effective Source

New O-type high-power vacuum resonant microwave devices are considered in this study: COM klystrons, CSM klystrons and resotrodes. All these devices can output a large amount of power (up to units of MW and higher) with an efficiency of up to 90%. Such devices are promising microwave sources for industrial microwave technologies as well as for microwave energy. The principle of GSP-equivalence for klystrons is described herein, allowing a complete physical analog of this device with other parameters to be created. The existing mathematical and computer models of klystrons are analyzed. The processes of stage-by-stage optimization and the embedding procedure, which leads to COM and to CSM klystrons, are considered. Resotrodes, IOT-type devices with energy regeneration in the input circuit, are also considered. It is shown that these devices can combine high power with an efficiency of up to 90% and a gain of more than 30 dB. Resotrodes with 0-regeneration can be effective sources of radio frequency (RF) power in the range of 20 to 200 MHz. Resotrodes with 2π-regeneration are an effective source of RF/microwave energy in the range of 200 MHz to 1000 MHz.

High Power Crossed-Field Amplifier for Material Processing

1994 ◽  
Vol 347 ◽  
Author(s):  
M. S. Worthington ◽  
Guilford R. MacPhail
Keyword(s):  
Material Processing ◽  
High Power ◽  
High Efficiency ◽  
Continuous Wave ◽  
Average Power ◽  
Microwave Energy ◽  
Operating Characteristics ◽  
Industrial Processing ◽  
Long Life

AbstractThe use of microwave energy for industrial processing applications has been ongoing since the early 1950's. A number of high power tubes were developed in the mid-1960's at 805, 915 and 2,450 MHz for industrial uses. One super power crossed-field amplifier (CFA), the QKS1262, was available in either 50 or 100 kW continuous wave (CW) format. This CFA was designed with a platinum emitter which was pulse started with 100 W average power. The CFA operates at ∼20 kV at 5 amps (50 kW - CW output) or 10 amps (100 kW - CW output/65% efficiency).This paper will describe the operating characteristics of the QKS1262 and the options in design to attain high power with high efficiency and long life (25,000 hours).

scholarly journals Design, Implementation, and Evaluation of High-Efficiency High-Power Radio-Frequency Inductors

2021 ◽  
Author(s):  
Roderick S. Bayliss ◽  
Rachel S. Yang ◽  
Alex J. Hanson ◽  
Charles R. Sullivan ◽  
David J. Perreault
Keyword(s):  
Radio Frequency ◽  
High Power ◽  
High Efficiency

A 2.5 GHz High Efficiency High Power Low Phase Noise Monolithic Microwave Power Oscillator

2015 ◽  
Vol 25 (11) ◽  
pp. 730-732 ◽  
Author(s):  
Hong-Yeh Chang ◽  
Chi-Hsien Lin ◽  
Yu-Cheng Liu ◽  
Wen-Ping Li ◽  
Yu-Chi Wang
Keyword(s):  
Phase Noise ◽  
High Power ◽  
Microwave Power ◽  
High Efficiency ◽  
Power Oscillator ◽  
Low Phase Noise

Progress on CEPC 650 MHz klystron

2021 ◽  
pp. 2142011
Author(s):  
Z. S. Zhou ◽  
Y. Chen ◽  
Y. L. Chi ◽  
D. Dong ◽  
S. Fukuda ◽  
...  
Keyword(s):  
Output Power ◽  
High Power ◽  
High Efficiency ◽  
Power Source ◽  
Beam Power ◽  
Project Implementation ◽  
Rf Power ◽  
Power Conditioning ◽  
Near Future

The beam power of the CEPC Collider is about 60 MW, so an efficiency of an RF power source is very important for cost of project implementation. The most popular source for an accelerator is a klystron, which has the advantage that it can be operated at high power with a reasonable high efficiency. IHEP is developing 650 MHz klystron with 800 kW CW output power and 80% efficiency. To reach this goal, a couple of klystron prototypes will be manufactured in the near future. The first prototype is completely manufactured by Institute of Electronics (IE) and GLVAC Company and the first step of high-power conditioning and commissioning is also completed in IHEP. The design schemes of high-efficiency klystron are also in progress.

Radio-Frequency Power Transistors Based on 6H- and 4H-SiC

MRS Bulletin ◽  
1997 ◽  
Vol 22 (3) ◽  
pp. 50-56 ◽  
Author(s):  
Karen Moore ◽  
Robert J. Trew
Keyword(s):  
Radio Frequency ◽  
Output Power ◽  
High Power ◽  
High Frequency ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Device Performance ◽  
Rf Power ◽  
Power Transistors ◽  
Power Densities

In recent years, SiC has received a great deal of attention as a nearly ideal material for the fabrication of high-speed, high-power transistors. The high electric breakdown field of 3.8 × 106 V/cm, high saturated electron drift velocity of 2 × 107 cm/s, and high thermal conductivity of 4.9 W/cm K indicate SiC's potential for high-power, high-frequency operation. A wide bandgap should also allow SiC field-effect transistors (FETs) to have high radio-frequency (rf) output power at high temperatures.These material qualities have been verified through outstanding device performance. Recent results for SiC metal-semiconductor field-effect transistors (MESFETs) have included superior frequency and power performance, with power gain at frequencies as high as 40 GHz and power densities as high as 3.3 W/mm. This represents significantly higher operating frequencies and power densities than current Si rf power FET technology, and nearly three times the power density of GaAs MESFETs, which are currently used in many commercial rf power applications. Similarly, SiC static induction transistors (SITs) have much higher power densities than their Si counterparts and have recently been demonstrated in modules with as much as 470-W total pulsed output power. This article describes microwave device operation, discusses material properties needed for rf power generation, and summarizes state-of-the-art SiC high-frequency device performance. Emphasis is placed on MESFETs and SITs since they are currently the most mature SiC-based device technologies.

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