scholarly journals Electrical and Thermal Transport Properties of Layered Superconducting Ca10(Pt4As8)((Fe0.86Pt0.14)2As2)5 Single Crystal

Materials ◽  
2019 ◽  
Vol 12 (3) ◽  
pp. 474
Author(s):  
Dapeng Wu ◽  
Xiaodong Meng ◽  
Yingying Zhai ◽  
Huaming Yu ◽  
Jiao Yu ◽  
...  
Keyword(s):  
Transport Properties ◽  
Critical Magnetic Field ◽  
Incoherent Scattering ◽  
Charge Carrier Density ◽  
Root Temperature ◽  
Upper Critical Magnetic Field ◽  
Out Of Plane ◽  
Large Anisotropy ◽  
Iron Based ◽  
Low Charge

We have synthesized single crystals of iron-based superconducting Ca10(Pt4As8)((Fe0.86Pt0.14)2As2)5 and performed extensive measurements on their transport properties. A remarkable difference in the behavior and a large anisotropy between in-plane and out-of-plane resistivity was observed. Disorder could explain the in-plane square-root temperature dependence resistivity, and interlayer incoherent scattering may contribute to the out-of-plane transport property. Along the ab plane, the estimated value of the coherence length is 15.5 Å. From measurements of the upper critical magnetic field Hc2 (T ≥ 20 K), we estimate Hc2(0) = 313 T. Thermal conductivity for Ca10(Pt4As8)((Fe0.86Pt0.14)2As2)5 is relatively small, which can be accounted for by the disorder in the crystal and the low-charge carrier density as verified by the Hall effect.

scholarly journals Theoretical Study of Upper Critical Magnetic Field (HC2) in Multiband Iron Based Superconductors

2016 ◽  
Vol 2016 ◽  
pp. 1-10 ◽  
Author(s):  
Tsadik Kidanemariam ◽  
Gebregziabher Kahsay
Keyword(s):  
Magnetic Field ◽  
Phase Diagrams ◽  
Penetration Depth ◽  
Coherence Length ◽  
Symmetry Axis ◽  
Critical Magnetic Field ◽  
Ginzburg Landau ◽  
Iron Based Superconductors ◽  
Upper Critical Magnetic Field ◽  
Iron Based

This research work focuses on the theoretical investigation of the upper critical magnetic field,HC2; Ginzburg-Landau coherence length,ξGL(T); and Ginzburg-Landau penetration depth,λGL(T), for the two-band iron based superconductorsBaFe2(As1-xPx)2,NdO1-xFxFeAs, and LiFeAs. By employing the phenomenological Ginzburg-Landau (GL) equation for the two-band superconductorsBaFe2(As1-xPx)2,NdO1-xFxFeAs, and LiFeAs, we obtained expressions for the upper critical magnetic field,HC2; GL coherence length,ξGL; and GL penetration depth,λGL, as a function of temperature and the angular dependency of upper critical magnetic field. By using the experimental values in the obtained expressions, phase diagrams of the upper critical magnetic field parallel,HC2∥c, and perpendicular,HC2⊥c, to the symmetry axis (c-direction) versus temperature are plotted. We also plotted the phase diagrams of the upper critical magnetic field,HC2versus the angleθ. Similarly, the phase diagrams of the GL coherence length,ξGL, and GL penetration depth,λGL, parallel and perpendicular to the symmetry axis versus temperature are drawn for the superconductors mentioned above. Our findings are in agreement with experimental observations.

scholarly journals Quantum oscillations and upper critical magnetic field of the iron-based superconductor FeSe

2015 ◽  
Vol 109 (2) ◽  
pp. 27003 ◽  
Author(s):  
Alain Audouard ◽  
Fabienne Duc ◽  
Loïc Drigo ◽  
Pierre Toulemonde ◽  
Sandra Karlsson ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Critical Magnetic Field ◽  
Quantum Oscillations ◽  
Upper Critical Magnetic Field ◽  
Iron Based

Large Anisotropy of the Upper Critical Magnetic Field in Single Crystal Bi-(Sr, Ca)-Cu-O

1988 ◽  
Vol 27 (Part 2, No. 4) ◽  
pp. L538-L541 ◽  
Author(s):  
Yoshikazu Hidaka ◽  
Migaku Oda ◽  
Minoru Suzuki ◽  
Yasushi Maeda ◽  
Youichi Enomoto ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Single Crystal ◽  
Critical Magnetic Field ◽  
Upper Critical Magnetic Field ◽  
Large Anisotropy

Upper Critical Magnetic Field of the Heavy-Fermion Superconductor UBe13

1985 ◽  
Vol 54 (5) ◽  
pp. 477-480 ◽  
Author(s):  
M. B. Maple ◽  
J. W. Chen ◽  
S. E. Lambert ◽  
Z. Fisk ◽  
J. L. Smith ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Heavy Fermion ◽  
Critical Magnetic Field ◽  
Upper Critical Magnetic Field ◽  
Heavy Fermion Superconductor

scholarly journals Thermal transport properties of decagonal quasicrystals and their approximants

2013 ◽  
Vol 1517 ◽  
Author(s):  
Petar Popčević ◽  
Ante Bilušić ◽  
Kristijan Velebit ◽  
Ana Smontara
Keyword(s):  
Thermal Conductivity ◽  
Electrical Resistivity ◽  
Transport Properties ◽  
Heat Transport ◽  
Thermal Transport ◽  
Strong Relationship ◽  
Decagonal Quasicrystal ◽  
Decagonal Quasicrystals ◽  
Plane Anisotropy ◽  
Out Of Plane

ABSTRACTTransport properties (thermal conductivity, electrical resistivity and thermopower) of decagonal quasicrystal d-AlCoNi, and approximant phases Y-AlCoNi, o-Al13Co4, m-Al13Fe4, m-Al13(Fe,Ni)4 and T-AlMnFe have been reviewed. Among all presented alloys the stacking direction (periodic for decagonal quasicrystals) is the most conductive one for the charge and heat transport, and the in/out-of-plane anisotropy is much larger than the in-plane anisotropy. There is a strong relationship between periodicity length along stacking direction and anisotropy of transport properties in both quasicrystals and their approximants suggesting a decrease of the anisotropy with increasing number of stacking layers.

scholarly journals Structure, Morphology, and Photoelectric Performances of Te-Sb2Se3 Thin Film Prepared via Magnetron Sputtering

Nanomaterials ◽  
2020 ◽  
Vol 10 (7) ◽  
pp. 1358
Author(s):  
Donglou Ren ◽  
Xue Luo ◽  
Shuo Chen ◽  
Zhuanghao Zheng ◽  
Michel Cathelinaud ◽  
...  
Keyword(s):  
Thin Film ◽  
Magnetron Sputtering ◽  
Photocurrent Density ◽  
Fast Response ◽  
Open Circuit ◽  
Charge Carrier Density ◽  
Response And Recovery ◽  
Direct Band ◽  
Low Charge ◽  
Antimony Selenide

Antimony selenide (Sb2Se3) has been widely investigated as a promising absorber material for photovoltaic devices. However, low open-circuit voltage (Voc) limits the power conversion efficiency (PCE) of Sb2Se3-based cells, largely due to the low-charge carrier density. Herein, high-quality n-type (Tellurium) Te-doped Sb2Se3 thin films were successfully prepared using a homemade target via magnetron sputtering. The Te atoms were expected to be inserted in the spacing of (Sb4Se6)n ribbons based on increased lattice parameters in this study. Moreover, the thin film was found to possess a narrow and direct band gap of approximately 1.27 eV, appropriate for harvesting the solar energy. It was found that the photoelectric performance is related to not only the quality of films but also the preferred growth orientation. The Te-Sb2Se3 film annealed at 325 °C showed a maximum photocurrent density of 1.91 mA/cm2 with a light intensity of 10.5 mW/cm2 at a bias of 1.4 V. The fast response and recovery speed confirms the great potential of these films as excellent photodetectors.

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